ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Chemical etching employing specific etchants with varying etch times (20–60 s) has been successfully applied for the first time to reveal dislocation sites on the polished (1 0 0) faces of ammonium dihydrogen orthophosphate single crystals grown at ambient temperature, using a modified gel technique of double diffusion in a U-shaped beaker assembly. The selective behaviour of the etchant for straight and inclined dislocations has been demonstrated. Growth striations due to temperature fluctuations, low-angle tilt boundary and etch channels corresponding to stacking faults were clearly observed. Surface structures of the etched faces were photographed by optical and scanning electron microscopes and are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01119764
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