ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The on-state and switching performance of high voltage 4H-SiC junction rectifiers arecompared using numerical simulations and experimental characterization. Epitaxial and implantedanode PiN diodes as well as novel, advanced rectifiers have been fabricated in 4H-SiC using 110μmthick drift layers. The relatively low forward voltage drop of these epi-anode diodes (4.2V @100A/cm2) indicates moderate conductivity modulation, while the superior switching performanceof the “MPS-like” rectifiers is demonstrated with reverse recovery characteristics at varioustemperatures and forward current densities
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1363.pdf
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