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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 921-926 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have prepared a stable two phase graphite intercalation compound (GIC) containing KC8 and KCsC16 by immersing CsC24 into liquid K at 70 °C. High resolution x-ray diffraction studies reveal that the KCsC16, which exhibits a stage one c-axis stacking sequence of ⋅⋅⋅ C K C Cs C K C Cs ⋅⋅⋅ is an ideal ternary heterostructure GIC with a c-axis repeat distance of dH=11.27 A(ring) and correlation range of 350 A(ring). The intensities of the (00l) x-ray diffraction pattern calculated on the basis of the proposed c-axis repeat sequence are in excellent agreement with the experimental observations. The KCsC16 in plane structure is a (2×2)R0 ° superlattice with an in plane correlation range of 140 A(ring). The ordered intercalant layers stack along the c axis with an α,β,γ,δ site sequence, where, e.g., α,γ=K and β,δ=Cs, and stacking faults occur on average every 30 A(ring).
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Biomembranes 601 (1980), S. 54-62 
    ISSN: 0005-2736
    Keywords: (Raman spectroscopy) ; Ca^2^+ ; Deuterated phosphatidylcholine ; Membrane fusion ; Molecular segregation ; Phosphatidylserine
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3238-3240 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of zincblende structured ZnxCd1−xSe epilayer grown on InP by metal organic chemical vapor phase deposition at temperatures of 360, 400, and 440 °C are investigated with low temperature cathodoluminescence spectroscopy (CL). Both near band gap and deep level emissions are found for the samples grown at 400 °C and above, but deep level emissions are absent for the sample grown at 360 °C. We conclude that the growth temperature should be kept below the temperature at which InP begins to decompose and diffusion of III–V constituents into the epilayer occurs. Evidence of this diffusion comes from an analysis of depth resolved CL studies, which shows that the deep level emissions occur mainly at the epilayer/substrate interface. By monitoring the ratio of the intensity of the deep level emissions to that of the near band emissions, we find that this ratio is larger for samples grown at high temperatures than those at low temperatures. Indium diffusion from the substrate into the epilayer is most likely the source of these deep levels. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5747-5750 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain-induced effects in quantum wells of InAsxP1−x/InP, InxGa1−xAs/InP, and InxGa1−xAs/ In0.52Al0.48As on (111) InP substrates are investigated. The strain induces a large piezoelectric field in these structures, and causes a large change in their energy band edges. Consequently the band structure of the quantum wells is dramatically modified, and the dependence of interband transition energies on alloy composition is different from that of quantum wells on (100) substrates. Moreover, a larger critical layer thickness is found for the quantum wells studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4662-4665 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cryobaric (11–100 K and 300 K, 0–65 kbar) measurements of photoluminescence in GaAs/AlxGa1−xAs multiquantum well structures are described. Results on a narrow-well (38 A(ring) wide) structure exhibiting both quantum well and bulk GaAs emission (from a thick buffer region) allow direct comparison of the two for the first time. We find that transitions between Γ-derived n=1 confined levels have the same pressure coefficient, within ±0.2 meV/kbar, as the bulk E0 gap, 11.4 meV/kbar. An interaction between n=1 electron states and a state 35–40 meV below the X-conduction minima is observed within the pressure-induced Γ-X crossover region for our narrow-well sample. The proposed origin of the latter state is residual interface impurities.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1112-1114 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used Raman backscattering to characterize GaAs/AlAs superlattices grown by metalorganic chemical vapor deposition technique. Diffusion across the GaAs and AlAs interfaces can be observed by studying the optic and folded acoustic phonon scattering. Observation of light scattering from folded acoustic phonons in metalorganic chemical vapor deposition grown samples suggests the ability of the technique in monitoring the layer-to-layer uniformity of superlattices. Using a simple, analytic model we estimate the interfacial width to be 20 A(ring).
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1674-1676 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnxCd1−xSe epilayers were grown by organometallic vapor phase epitaxy using various VI/II flow ratios at a temperature of 420 °C. Cathodoluminescence (CL) spectroscopy and imaging were used to study their luminescent properties. Both near-band gap emissions (NBE) and deep-level emissions (DLE) were found in the CL spectra. We found that the width of the NBE peak and the intensity of the DLE relative peak to that of NBE increase with an increase in the VI/II flow ratio. Both effects are traced to the presence of pyramidal growth hillocks on the surface of the epilayer and to their increased density at high VI/II ratios. Monochromatic CL images show that there are two kinds of luminescent centers contributing to the NBE. The one that emits at slightly lower energies is only found, together with the DLE centers, within the growth hillocks. The one that emits at a slightly higher energy is found from surrounding areas. The concomitant appearance of DLE centers and low energy NBE centers shows that they share a common origin. Excitation intensity dependence of the photoluminescence of the NBE centers identifies as donor–acceptor-pair recombinations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1127-1129 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epilayers were grown on a (001) GaAs substrate by metalorganic chemical-vapor-phase deposition. An interruption of the Zn source (i.e., Se passivation) was purposely introduced during the growth. The optical properties of the epilayers grown were studied by photoluminescence (PL) spectroscopy. We show that Se passivation during the growth interruption introduces luminescent centers in the epilayers. Evidence of this assignment comes from the characteristic temperature and excitation wavelength dependence of the PL spectra, which are distinctly different from those of commonly observed deep-level emissions associated with the so-called self-activated centers. Moreover, the PL peak energy of the centers depends strongly on the coverage of Se: the longer the time or the higher the flow rate of the Se precursor used for the passivation, the lower the energy of its PL peak. The possible origin of this luminescence is discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3857-3859 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epilayers were grown on GaAs (001) substrates by metal organic chemical vapor phase deposition, using different group VI–II precursor flow ratios. Atomic force microscopy (AFM) examinations of their surface show that epilayers grown with a high VI/II ratio are not as stable as those grown with a low ratio. When exposed to air, Se clusters would appear and grow on the surface of the unstable epilayers. The ripening process could take as long as 50 days at room temperature. Secondary electron and cathodoluminescence images indicate that the clusters are more likely to emerge from areas of high defect density. Moreover, AFM topographic images of epilayers at an intermediate stage of ripening suggest that clusters near surface depressions would grow in size at the expense of others. By using a low accelerating voltage and allowing the clusters to grow to a size larger than the electron interaction volume, we used energy dispersive x-ray analysis to show that the clusters are made up entirely of Se. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3399-3401 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of p− porous silicon (PS) were formed in HF solutions of different concentrations. One type with nanoscale (NS) dimensions of about 3 nm and the other with dimensions of about 5 nm. PS samples formed in the lower concentration of HF were anodized again in the higher concentration of HF and vice versa. The photoluminescence peak position and, thus, the size of NS units of PS were found to be related to the concentration of HF in which the PS is formed, independent of the forming time. The larger NS units of PS can be further electrochemically etched by anodization, while the smaller ones cannot. These results give a confirming evidence for the quantum confined electrochemistry model of the formation mechanism of PS based on the quantum confinement effect and classical electrochemical theory [S. L. Zhang, K. S. Ho, Y. T. Hou, B. D. Qian, P. Diao, and S. M. Cai, Appl. Phys. Lett. 62, 642 (1993)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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