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1

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Perpendicular magnetic anisotropy in Pt/Fe multilayers : 35th annual conference on magentism and magnetic materials San Diego, California (USA) 29 Oct − 1 Nov 1990 (1991)

Katayama, T. ; Suzuki, Y. ; Nishihara, Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 5658-5660

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Perpendicular magnetic anisotropy (K⊥) and related magnetic properties in Pt/Fe multilayers [compositionally modulated multilayer films (CMFs)] are investigated. It is found that Pt/Fe CMFs with about an 18-A(ring) Pt layer and Fe layer below 5 A(ring) become perpendicularly magnetized films. Surface magnetic anisotropy (Ks) and volume anisotropy (Kv) are 0.46 erg/cm2 and about − 2 × 107 erg/cm3 at room temperature, respectively. The Ks is almost equivalent to that of Pt/Co CMFs and increases with decreasing temperature. The absolute value of Kv, however, is much larger than that of the Pt/Co system. The effective magnetic anisotropy (K⊥ eff) of [Fe(4.7 A(ring))/Pt(18.5 A(ring))]80 CMF changes from positive to negative at T(approximately-equal-to)200 K with decreasing temperature.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347927

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2

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Preparation of giant magnetostrictive thin film by magnetron and ion beam sputtering processes : The 8th international conference on ion sources (2000)

Nakazato, K. ; Hashimoto, M. ; Uchida, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 71 (2000), S. 996-998

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ISSN: 1089-7623

Source: AIP Digital Archive

Topics: Physics , Electrical Engineering, Measurement and Control Technology

Notes: Thin films of giant magnetostrictive materials were formed by dc magnetron sputtering and ion beam sputtering processes. A systematic investigation was made to examine the effect of these deposition processes on the magnetic properties and magnetostriction of TbFe2 and (Tb, Dy)Fe2 thin films. The magnetostriction of the films formed by dc sputtering was in the range from 200 to 400 ppm at a magnetic field H=15 kOe, whereas the films formed by the ion beam sputtering exhibited a slightly higher magnetostriction. For both processes, the increase in Ar partial pressure in the deposition processes strongly changed magnetic anisotropy from perpendicular to in plane, and increased magnetostriction and magnetostrictive response at low magnetic fields. However, the mixture of Xe gas into Ar gas in the dc sputtering lowered magnetization and gave almost no effect on magnetic anisotropy. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1150370

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3

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MgO thin film formation by ion enhanced deposition processes : The 8th international conference on ion sources (2000)

Hashimoto, M. ; Onozaki, Y. ; Uchida, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 71 (2000), S. 999-1001

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ISSN: 1089-7623

Source: AIP Digital Archive

Topics: Physics , Electrical Engineering, Measurement and Control Technology

Notes: MgO thin films were prepared by ion plating systems and by an ion beam sputtering system with a plasma filament type ion source. Triode-type and rf ion plating processes were employed. MgO films were prepared with various oxygen partial pressures ranging from 10−3 to 10−2 Pa. In the triode-type ion plating process, the MgO(200) was the preferred growth orientation of film. In the rf ion plating process, MgO(111) and (220) reflection peaks appeared in the x-ray diffraction patterns of films. The films were transparent, and those values of transmittance of ultraviolet region were increased as increasing oxygen partial pressure. In the ion beam sputtering process, the film showed amorphous structure and low transmittance. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1150371

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4

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A case of erythrokeratoderma variabilis without mutations in connexin 31 (2000)

Ishida-Yamamoto, A. ; Kelsell, D. ; Common, J. ; [et al.]

Oxford, UK : Blackwell Science Ltd

British journal of dermatology 143 (2000), S. 0

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ISSN: 1365-2133

Source: Blackwell Publishing Journal Backfiles 1879-2005

Topics: Medicine

Notes: Erythrokeratoderma (EK) variabilis is a heterogeneous group of diseases characterized by migratory erythematous patches and hyperkeratotic plaques. Mutations in connexin 31 have recently been found to underlie several cases of EK variabilis. We describe a Japanese girl with extensive lesions that appeared to be a form of EK variabilis, clinically resembling genodermatose en cocardes (Degos). Our patient had characteristic migratory rosette or target-like erythematous keratotic plaques with peripheral scaling in addition to relatively fixed keratotic plaques. Sequencing of the connexin 31 gene did not detect mutations. Skin biopsy showed parakeratotic hyperkeratosis with hypergranulosis. Immunohistochemically, suprabasal keratins, involucrin and profilaggrin were unequivocally expressed, while loricrin expression was greatly diminished and deiminated K1 was undetectable. Our results confirm aetiological heterogeneity in EK. The histological features suggest disruption of keratinocyte terminal differentiation at a very late stage.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1046/j.1365-2133.2000.03902.x

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5

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Raman scattering from LO phonon-plasmon coupled modes in gallium nitride (1994)

Kozawa, T. ; Kachi, T. ; Kano, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 1098-1101

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Raman spectra of n-type gallium nitride with different carrier concentrations have been measured. The LO phonon band shifted towards the high-frequency side and broadened with an increase in carrier concentration. Results showed that the LO phonon was coupled to the overdamped plasmon in gallium nitride. The carrier concentrations and damping constants were determined by line-shape fitting of the coupled modes and compared to values obtained from Hall measurements. The carrier concentrations obtained from the two methods agree well. As a result, the dominant scattering mechanisms in gallium nitride are deformation-potential and electro-optic mechanisms.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.356492

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6

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The interaction between platinum films and silicon substrates: Effects of substrate bias during sputtering deposition (2000)

Shi, J. ; Kojima, D. ; Hashimoto, M.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 1679-1683

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The reactions between platinum and silicon, both during platinum deposition at elevated temperature and during a thermal annealing process, have been investigated using x-ray diffraction, cross-sectional transmission electron microscopy, and x-ray photoelectron spectroscopy. It has been found that sputtering deposition of platinum on a silicon substrate at 200 °C results in the formation of PtSi at the Pt–Si interface. But the reaction cannot fully proceed at this temperature for a platinum film with a thickness of 35 nm. Further annealing at 450 °C causes the platinum film to transform to PtSi completely. A substrate bias of −90 V during sputtering deposition leads to the formation of platinum films with larger columnar grains, instead of finer grains as being formed without substrate bias. In such a case, oxygen diffusion toward the interface was enhanced through the boundaries of these columnar grains, and this results in an accumulation of oxygen and oxide formation at the interface. As a result, the reaction between platinum and silicon was inhibited during the further annealing process for the Pt/Si films deposited with substrate bias. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.373871

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Antiphase domains in GaAs grown on a (001)-oriented Si substrate by molecular-beam epitaxy (1988)

Noge, H. ; Kano, H. ; Hashimoto, M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 2246-2248

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Antiphase domains (APDs) in the GaAs layer grown by molecular-beam epitaxy on a nominally (001)-oriented Si substrate were easily observed by molten potassium hydroxide etching or photoelectrochemical etching. The APD boundaries are almost parallel to {100} or {110} planes. The density of APDs decreases with the GaAs layer thickness in the 0.5–1.0-μm region from the GaAs/Si interface. The appearance of APDs depends on the preheating conditions of the substrate. Preheating at 950 °C for 30 min or at 1000 °C for 5 min was sufficient for the suppression of APDs. This may be due to the change of the Si surface structure and the following complete annihilation of APDs in the GaAs layer near the heterointerface.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341698

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Effects of substituted elements into the Cr layer on a CoNiCr/Cr sputtered hard disk (1990)

Tani, N. ; Hashimoto, M. ; Murata, Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 7507-7509

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A study was made on the effects of elements substituted into the Cr layer on a CoNiCr/Cr sputtered hard disk. Among the various elements tried, Si, Gd, Ce, and Cu were found to increase the coercive force in the film. For Si and Gd, alloy targets of Cr-Si and Cr-Gd were prepared, and the deposited films indicated an increase of the coercive force by about 150 Oe over those without Si or Gd element.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345810

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Sensitivity to two major allergens (Cry j I and Cry j II) in patients with Japanese cedar (Cryptomeria japonica) pollinosis (1995)

HASHIMOTO, M. ; NIGI, H. ; SAKAGUCHI, M. ; [et al.]

Oxford, UK : Blackwell Publishing Ltd

Clinical & experimental allergy 25 (1995), S. 0

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ISSN: 1365-2222

Source: Blackwell Publishing Journal Backfiles 1879-2005

Topics: Medicine

Notes: Background: Japanese cedar (Cryptmeria japonica: CJ) pollinosis is one of the most important allergic diseases in Japan. Recently, the second major allergen (Cry j II) was isolated from CJ pollen. There have been no prevalence studies of sensitivity to Cry j I and Cry j II among a large number of patients with pollinosis.Objective: This study was conducted to evaluate the prevalence of sensitivity to Cry j I and Cry j II. We measured specific IgE antibodies to these allergens in the sera of 145 patients. Furthermore, comparison of the sensitivity to Cry j I and Cry j II was examined by the hisiamine release assay.Methods: Specific IgE antibodies to Cry j I and Cry j II were assayed by a fluorometric ELISA. Allergen-specific histamine release was measured by a radioimmunoassay kit,Results: More than 90% of 145 patients had specific IgE antibodies to both allergens. the remainder had specific IgE to either one or the other. There were seasonal changes in the level of specific IgE. The changes in the levels of anti-Cry j II IgE antibodies were parallel to those of anti-Cry j I IgE. The histamine release assay with leucocytes from the patients demonstrated that the allergenic potency of the two allergens is almost the same.Conclusion: Cry j II is an as important a major allergen as Cry j I.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1111/j.1365-2222.1995.tb00027.x

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Formation of peroxo oxalato complex of tungsten(VI) directly from tungsten carbide and hydrogen peroxide - a new path to the total synthesis of the organic compound

Kudo, T. ; Sasaki, Y. ; Hashimoto, M. ; [et al.]

Amsterdam : Elsevier

Inorganica Chimica Acta 133 (1987), S. 201-203

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ISSN: 0020-1693

Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Topics: Chemistry and Pharmacology

Type of Medium: Electronic Resource

URL: http://linkinghub.elsevier.com/retrieve/pii/S0020-1693(00)87765-8

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