Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 638-640
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thermally grown silicon nitride layers ≤30 A(ring) thick have been investigated as interfacial layers in silicon Schottky barrier structures. Current-voltage characteristics of these devices show modified barrier heights with near unity ideality factors, more ideal than those obtained using silicon dioxide films of the same thickness. By appropriate choice of metal or of nitride layer thickness barrier heights in any desired range can be produced. Barrier heights of different metals are "unpinned'': they differ by a fixed constant, independent of the thickness, indicating that interface trap states are not present in sufficient quantity to affect the barrier height. The barrier height varies roughly linearly with nitride thickness, for both as-grown and etched films, suggesting the presence of a constant quantity of positive fixed charge located at the silicon-silicon nitride interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100903
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |