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  • 1
    Electronic Resource
    Electronic Resource
    Field-effect trap-level-distribution model of dynamic random access memory data retention characteristics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7053-7060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dynamic random access memory data retention characteristics were investigated as a function of operating voltage. Based on a statistical process, called the trap-level-distribution model, which was proposed in our previous report, we further assumed that the junction leakage current by Shockley–Read–Hall process is enhanced by an electric field through the trap-assisted-tunneling process. We incorporated into the model two processes that cause variation in the electric field at the traps; the variation of electric field itself and the spatial trap distribution. By comparing the Monte Carlo and analytical calculations with the experimental results, we found that the retention time distribution is not only caused by the energy level and spatial distributions of the traps, but by the space-charge-region field distribution among the cells. A possible origin of the field distribution is the variation of dopant profile among the junctions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365227
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  • 2
    Electronic Resource
    Electronic Resource
    Statistical modeling of dynamic random access memory data retention characteristics (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3091-3099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A statistical model to investigate the distribution of dynamic random access memory data retention times is proposed. The model assumes that the retention time is determined by a junction leakage current generated at carrier traps by a Shockley–Read–Hall process, and that the trap levels are randomly distributed not only among the memory cells but also within a cell. Monte Carlo results based on the model were in excellent agreement with experimental results, which confirmed the validity of the model. An analytical expression of the retention time distribution was also derived, and proved a good approximation near the 50% cumulative probability. Based on the model, variation in the retention time distributions among samples was found to be related to different trap-level distributions at the SiO2/Si interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363119
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  • 3
    Electronic Resource
    Electronic Resource
    Novel characterization of implant damage in SiO2 by nuclear-deposited energy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1106-1108 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etching enhancement in through-implanted SiO2 has been characterized by nuclear-deposited energy independently of implant conditions. An empirical expression has been proposed to describe the etching rate for any implantation. The enhanced etching has been related to the Si-O vibrational frequency shift. Etching enhancement has been found to reflect the structural change in SiO2, and to be a good measure of degradation. The structural change of SiO2 stops and the etching rate reaches a maximum for an ion dose corresponding to nuclear-deposited energy larger than 3.4×1023 eV/cm3. This energy is equal to the total SiO bonding energy (3.8 eV) in a unit volume of SiO2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101429
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  • 4
    Electronic Resource
    Electronic Resource
    Vibration technique for indirect measurement of diastolic arterial pressure in human fingers (1989)
    Springer
    Medical & biological engineering & computing 27 (1989), S. 130-136 
    Details
    ISSN: 1741-0444
    Keywords: Diastolic pressure ; Finger arterial pressure ; Indirect sphygmomanometry ; Photoelectric plethysmography ; Pressure/volume relation ; Vibration method ; Volume oscillometric method
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Abstract Diastolic pressure Pd was indirectly measured by vibrating a finger artery with a 10 Hz sinusoidal pressure variation during a gradual increase (or decrease) in occlusive cuff pressure Pc. Pulsatile arterial volume changes on which sinusoidal variations are superimposed were detected by a transmitted infra-red photoelectric plethysmograph (TIPP). It is known that volume change in an artery shows a maximum amplitude at the transmural pressure Pt level equal to 0 mm Hg due to the nonlinear viscoelastic properties of the arterial wall. For the same reason, the amplitude of the sinusoidal volume variation reached its maximum at the end-diastolic phase, when Pc was controlled to be exactly equal to Pd. The indirect Pd values determined from Pc were compared with those simultaneously measured by a direct method in rabbit forelegs and by the volume-compensation method in human fingers. Using the principle of the volume oscillometric method systolic and mean pressures were also determined by this system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02446221
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