ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The microstructures of high-temperature oxide scales on the Si-terminated surface andC-terminated surface of 6H-SiC were investigated by transmission electron microscopy (TEM). Wefound that mechanical polishing caused surface strains, about 100 nm in depth, on both sides ofspecimens. Mechanically polished specimens were oxidized at 1473 K for 20 h in air. Oxide scalesof about 250 nm in thickness were formed on the Si-terminated surface and of about 400 nm on theC-terminated surface. Since the strain regions caused by mechanical polishing were oxidized,strains were no longer observed. As a result, this oxidation condition effectively removed the strains.The oxide scales were identified as amorphous silica on the Si-terminated face, while crystallineoxides and amorphous silica were observed on the C-terminated face
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.561-565.2135.pdf
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