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  • 1
    Electronic Resource
    Electronic Resource
    Doped microcrystalline silicon growth by high frequency plasmas (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 616-618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of boron- and phosphorus-doped microcrystalline silicon films on glass using plasma enhanced chemical vapor deposition at high rf frequencies was examined for substrate temperatures from room temperature to 400 °C. Microcrystalline growth was obtained by heavy hydrogen dilution of silane with phosphine or trimethylboron as the doping gas. A maximum conductivity of 8 (Ω cm)−1 was obtained at a substrate temperature of 180 °C for p-type films and 74 (Ω cm)−1 at 210 °C for n-type films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111067
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Improving tunneling junction in amorphous silicon tandem solar cells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1871-1873 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report new results on a tunneling junction in amorphous silicon tandem solar cells using the metal oxide, niobium oxide (NbOx ), as the recombination layer and the advanced doping gas, trimethylboron [B(CH3 )3 ], in the p+ layer. The new tunneling junction has a low series resistance and minimizes optical loss. The advantage of the NbOx layer is its high transparency, hence a relatively thick (∼10 nm) layer can be used. The ability to use a thick oxide layer is important for the implementation of the tunneling junction in the production of large-area panels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103073
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    Paper (German National Licenses)
    Fulltext
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