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  • 1
    Electronic Resource
    Electronic Resource
    Properties of Liposomes Prepared with Various Lipids (2002)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 67 (2002), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Use of several lipids as an alternative to cholesterol to prepare stable liposomes was tried. Liposome prepared at 1/0.25 lecithin/stearic acid ratio exhibited better (55%) encapsulation efficiency (EE) of bovine serum albumin (BSA) than that (41%) prepared at 1/0.25 lecithin/cholesterol ratio. Liposomes showed the minimal released percentage of encapsulated BSA at pH 6. Storage at −20 °C caused serious damage to liposomes. Addition of α–tocopherol was effective in stabilizing liposomes. Liposomes, incorporated with α–amylase, prepared at 1/0.25 lecithin/cholesterol or stearic acid ratio were effective in protecting enzyme against acid (pH 2.8) and pepsin (15 mg/mL). Use of stearic acid, instead of cholesterol, would be feasible in preparing stable liposomes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2002.tb08820.x
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of epitaxial Ba"2YCu"3O"7"-"x films on LaAlO"3 (001)
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 172 (1990), S. 282-286 
    Details
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4534(90)90618-O
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  • 3
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of CrGe on (111) and (001) germanium (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2821-2823 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial CrGe was grown locally on both (111) and (001) Ge by a solid-phase epitaxy scheme. Both plan-view and cross-sectional transmission electron microscopy were applied to determine the orientation relationships between epitaxial CrGe and germanium substrates, and to characterize the microstructural features of epitaxial regions and CrGe/Ge interfaces. The best CrGe epitaxy was obtained in (111) samples annealed first at 250 °C for 1 h followed by heat treatment at 600 °C for 1 h. Epitaxial regions as large as 20 μm in size were observed. CrGe was the first refractory germanide grown epitaxially on germanium. The quality of epitaxy is also unsurpassed by any metal germanide epitaxy achieved to date. The growth of a number of epitaxial germanides on germanium with regular atomic arrangements at the interfaces may facilitate the basic understanding of metal-semiconductor interactions as well as enhance the performance of various semiconductor-based devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341592
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  • 4
    Electronic Resource
    Electronic Resource
    Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 745-751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Traditional techniques for growing Si-Ge layers have centered around low-temperature growth methods such as molecular-beam epitaxy and ultrahigh vacuum chemical vapor deposition in order to achieve strain metastability and good growth control. Recognizing that metastable films are probably undesirable in state-of-the-art devices on the basis of reliability considerations, and that in general, crystal perfection increases with increasing deposition temperatures, we have grown mechanically stable Si-Ge films (i.e., films whose composition and thickness places them on or below the Matthews–Blakeslee mechanical equilibrium curve) at 900 °C by rapid thermal chemical vapor deposition. Although this limits the thickness and the Ge composition range, such films are exactly those required for high-speed heterojunction bipolar transistors and Si/Si-Ge superlattices, for example. The 900 °C films contain three orders of magnitude less oxygen than their limited reaction processing counterparts grown at 625 °C. The films are thermally stable as well, and do not interdiffuse more than about 20 A(ring) after 950 °C for 20 min. Therefore, they can be processed with standard Si techniques. At 900 °C, the films exhibit growth rates of about 15–20 A(ring)/s. We have also demonstrated the growth of graded layers of Si-Ge, and have determined that a strain gradient exists in these layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347360
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  • 5
    Electronic Resource
    Electronic Resource
    Interfacial reactions of platinum thin films on (111) and (001) germanium (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1177-1181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combined plan-view and cross-sectional transmission electron microscope study has been carried out to investigate the interfacial reactions in platinum thin films on germanium. Pt2Ge, PtGe, Pt2Ge3, and PtGe2 were found to form at 160, 250, 350, and 400 °C, respectively. Definite orientation relationships were observed between those of Pt2Ge, PtGe, and PtGe2 and (111)Ge. No epitaxial growth of platinum germanides on (001)Ge was observed. The results were found to be partially different from those obtained in a previous investigation. The discrepancy is attributed to different substrate cleaning schemes prior to the metal film depositions in the two studies. It appears that the growth of platinum germanide epitaxy on (111)Ge is not directly correlated with the lattice matches at germanide/Ge interfaces at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341137
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic properties and microstructure of Fe4N and (Fe,Ni)4N : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6247-6249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-phase Fe4N and (Fe1−xNix)4N compounds have been synthesized in a continuous form by heat treating iron and iron-nickel alloy sheets at various temperatures under NH3/H2 atmospheres. The Fe4N sheet has a high room-temperature magnetization value of 179 emu/g (2.14 μB/Fe), which is only slightly less than 218 emu/g (2.19 μB/Fe) observed in pure iron. The magnetic moments of the Fe-Ni alloy nitrides decreased monotonically as x was increased, in contrast to those for the starting alloys Fe1−xNix which exhibited a peak value around x=0.05. The decrease in magnetic moment with nickel content in the alloy nitrides was close to the value anticipated by magnetic dilution from nickel. The coercive force is about 5 Oe and is slightly decreased by the Ni substitution. The Fe-nitride offers a significantly improved corrosion resistance over pure iron. Even further improvement is obtained in the (Fe1−xNix)4N system with only slight sacrifice in magnetic moment. The addition of nickel has been found to noticeably improve the mechanical ductility of the normally brittle Fe4N compound. Theses nitrides also exhibit significantly increased electrical resistivity and wear resistance, and may be useful for a variety of technological applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350010
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  • 7
    Electronic Resource
    Electronic Resource
    Partial epitaxial growth of cobalt germanides on (111)Ge (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1588-1590 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized epitaxial Co5Ge7 and CoGe2 have been grown in cobalt thin films on (111)Ge in the solid phase epitaxy regime. The orientation relationships between epitaxial germanides and the substrates as well as the configuration of the interfacial dislocations were analyzed by transmission electron microscopy (TEM) in detail. Surface morphology was examined by scanning electron microscopy. The results obtained from Read camera glancing angle x-ray diffraction and Rutherford backscattering channeling analysis were found to corroborate with those from TEM examinations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98563
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  • 8
    Electronic Resource
    Electronic Resource
    Interfacial structure and its effect on nucleation and growth energetics in mesotaxial Si/CoSi2/Si structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3467-3469 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show how analysis of the stacking sequences at CoSi2/Si interfaces formed by 100 kV Co+ implantation into Si (001) or (111) predicts the formation of partial dislocations or stacking faults at precipitate corners. The presence and nature of the stacking fault can uniquely identify the bonding coordination at the CoSi2/Si(111) interface. Consideration of the interfacial structure for twinned (B) and untwinned (A) {111} interfaces helps explain the competitive nucleation and growth of A vs B precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105655
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  • 9
    Electronic Resource
    Electronic Resource
    Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitter (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2009-2011 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current gain of polycrystalline silicon emitter transistors has been improved by modification of the polycrystalline silicon/silicon interface using a low-energy ion beam. The base current is reduced by a factor of 3 while maintaining ideal current-voltage characteristics. No change in the collector current and the emitter series resistance is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105023
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1613-1616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20–50% less on an average for VCSELs grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm2 were measured with an emission efficiency of 0.2 mW/mA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104086
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