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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1930-1932 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal-semiconductor-metal (MSM) In0.53Ga0.47As photodiode using a transparent cadmium tin oxide (CTO) layer for the interdigitated electrodes was investigated. The transparent contact prevents shadowing of the active layer by the electrodes, thus allowing greater collection of incident light. The barrier height (φBn) of CTO on i-In0.52Al0.48As was determined to be 0.47 eV, while the Ti/Au barrier height was 0.595 eV. The reduced barrier height for CTO is caused by tunneling through the sputter-damaged cap layer. Responsivity for 1.3 μm incident light was 0.49 and 0.28 A/W, respectively, for the CTO and Ti/Au MSM photodiodes. No antireflection (AR) coating was utilized over the bare semiconductor surface. The CTO MSM photodiode shows a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1727-1732 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analyses of heat spreading, temperature distribution, and resultant cooling effects in a monolithically Peltier-cooled laser (MPCL) structure are presented. The analyses were obtained by using Laplace's equation and were made under steady-state conditions, assuming constant thermal conductivity. In this MPCL structure a metal surface layer surrounds a heat-generating p-n laser junction. It is shown that by depositing relatively thick metallic cooling plates a 15% temperature reduction and 25% thermal spreading can be achieved. This heat spreading due to the passive cooling is added to the cooling obtained when the Peltier cooler is operated. Experimental measurements of the effect of Peltier cooling reveal a 6.8 °C reduction in junction temperature corresponding to a wavelength shift of as much as 20 A(ring).
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5006-5010 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen and helium implantation into GaAs, LiNbO3, and other crystals has been shown to produce planar or channel waveguides via defects/damage and/or carrier removal or compensation. We have measured implanted depth distributions of 1H, 2H, and 4He in GaAs and LiNbO3 as functions of ion energy, ion fluence, substrate temperature, and annealing temperature using secondary ion mass spectrometry. We have studied the defect depth distribution for hydrogen-implanted GaAs by transmission electron microscopy. We have determined the lateral spread of 1H and 2H ions implanted into GaAs by varying the angle of implantation; this relates to the increase in width of closely spaced parallel channel waveguides made using patterned masks.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1432-0630
    Keywords: 40.80 ; 42.82 ; 34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Characterization of the effects of thermal processing on the optical and electronic properties of proton implantedn-type GaAs is reported in this paper. The thermal processing includes variations in the substrate temperature during implantation and postimplantation thermal annealing. Infrared reflectivity data indicate that the depths to which the optical changes extend in the as-implanted samples are greatest in the cryogenic implants. Carrier concentration profiles derived from capacitance-voltage measurements are shown to have significant differences depending upon processing history. Existence ofn-type surface layers are noted in high fluence level implants.
    Type of Medium: Electronic Resource
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