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  • 1
    Electronic Resource
    Electronic Resource
    Cystic islet cell tumors: Radiologic findings in three cases (1994)
    Springer
    Abdominal imaging 19 (1994), S. 225-228 
    Details
    ISSN: 1432-0509
    Keywords: Pancreas, neoplasms ; Islet cell tumors, diagnosis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We report three cases of cystic islet cell tumors, two caused by gastrinomas and the other by an islet cell carcinoma. All three patients underwent computed tomography (CT) and angiography and two also had magnetic resonance (MR) imaging. Several common radiographic findings were present as follows: thickening of the cyst wall and irregularity of the inner surface on postcontrast CT and MR images, neovascularity and a densely staining hypervascular rim on angiography, and moderately increased signal intensity of the cyst content on T1-weighted MR images, which indicated fluid containing blood and/or necrotic tissue. These findings are helpful in defining the nature of these lesions and strongly suggest that cystic islet cell tumor should be included in the differential diagnosis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00203512
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular characterization of a JC virus (Sap-1) clone derived from a cerebellar form of progressive multifocal leukoencephalopathy (1992)
    Springer
    Acta neuropathologica 83 (1992), S. 105-112 
    Details
    ISSN: 1432-0533
    Keywords: Polyomavirus JC ; Progressive multifocal leukoencephalopathy (PML) ; Cerebellar PML ; Molecular characterization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Progressive multifocal leukoencephalopathy (PML) is a demyelinating disease caused by polyomavirus JC (JCV). In the majority of cases of PML the cerebrum is mainly affected (cerebral PML) but on rare occasions lesions are restricted to the cerebellum and brain stem (cerebellar PML). We report a rare cerebellar PML case which occurred in a Japanese patient undergoing prolonged hemodialysis treatment. To understand the molecular basis of the viral tissue tropism, we molecularly cloned JCV DNA and compared it with those of cerebral PML. Of ten clones analyzed nine showed identical fragment patterns after digestion with various restriction endonucleases, and we designated these clones Sap-1. It could be shown that the basic structures of the regulatory regions are similar between Sap-1 and isolates from cerebral PML. Restriction endonuclease mapping analysis was used to examine the genetic relationship between Sap-1 and urine-derived isolates containing the archetypal regulatory sequence. We found that Sap-1 was genetically related to an archetypal JCV isolate in Japan.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00308469
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  • 3
    Electronic Resource
    Electronic Resource
    Carboxin resistance transformation of the homobasidiomycete fungus Pleurotus ostreatus (2000)
    Springer
    Current genetics 37 (2000), S. 209-212 
    Details
    ISSN: 1432-0983
    Keywords: Key words Basidiomycete ; Transformation ; White-rot fungi ; Carboxin ; Succinate:ubiquinone oxidoreductase
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract A novel selection marker gene for transformation of the white-rot basidiomycete Pleurotus ostreatus was developed by introducing a point mutation in a gene which encodes the iron-sulfur protein (Ip) subunit of succinate dehydrogenase. The mutant gene, Cbx R, encodes a modified Ip subunit with an amino-acid substitution (His239 to Leu) and confers resistance to the systemic fungicide, carboxin. The DNA sequence was integrated ectopically in the chromosome of the transformants. This is the first report of a homologous marker gene which is available for the molecular breeding of an edible mushroom.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002940050521
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  • 4
    Electronic Resource
    Electronic Resource
    Switching phenomena in CdIn2S4 thin films (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1846-1851 
    Details
    ISSN: 0392-6737
    Keywords: Electronic properties of thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si sono studiati due tipi di fenomeni di commutazione in film sottili amorfi e policristallini di CdIn2S4 che sono stati ottenuti col metodo di evaporazione nel vuoto e col metodo di spruzzamento a c.c., rispettivamente. Uno è il cosiddetto fenomeno di commutazione della memoria che nasce dal percorso del filamento a bassa resistenza. Un altro è il caratteristico fenomeno di commutazione nel quale la resistività cambia bruscamente ogni qual volta la temperatura ambiente raggiunge un valore critico. Il tempo di commutazione è breve e intorno ai 100 ns. Questo fenomeno di commutazione è in relazione ai difetti innati nel reticolo CdIn2S4 perché questi possono essere osservati nei film policristallini cosí come nei film sottili amorfi.
    Abstract: РезУме Исследуится два типа явлений коммутации в поликристаллических и аморфных тонких пленках CdIn2S4, которые приготовлены методом вакуумного испарения и методом d.c. напыления. Одно явление представляет так называемое явление запоминающею коммутации. Другое представляет характеристическое явление коммутации, в котором удельное сопротивление резко меняется, когда температура окружающею среды достигает критическою величины. Время коммутации меньше или порядка 100 нс. Это явление коммутации связано с природными дефектами в решетке CdIn2S4, так как они могут наблюдаться в поликристаллических, а талже в аморфных тонких пленках.
    Notes: Summary Two kinds of switching phenomena in CdIn2S4 polycrystalline and amorphous thin films which were prepared by the vacuum evaporation method and the d.c. sputtering method, respectively, were studied. One is the so-called memory switching phenomenon arising from the low resistive filament path. Another is a characteristic switching phenomenon in which the resistivity abruptly changes whenever the ambient temperature reaches a critical value. The switching time is fast and about 100 ns. This switching phenomenon is related to the native defects in the CdIn2S4 lattice, because they can be observed in the polycrystalline as well as in the amorphous thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457875
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetoresistance of CdIn2S4 single crystals (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1886-1890 
    Details
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto La resistenza magnetica è stata misurata in cristalli singoli di CdIn2S4 con concentrazioni di portatori diverse che variano da 4.3·1015 cm−3 a 8.5·1018 cm−3. I risultati indicano che il minimo della banda di conduzione del CdIn2S4 è situato ak=0.
    Abstract: Резюме Измеряется магниторезистивный эффект в монокристаллах CdIn2S4, имеющих различные концентрации носителей от 4.3·1015 см−3 до 8.5·1018 см−3. Полученные результаты указывают, что минимум зоны проводимости в CdIn2S4 приk=0.
    Notes: Summary Magnetoresistance was measured on CdIn2S4 single crystals having various carrier concentrations ranging from 4.3·1015 cm−3 to 8.5·1018 cm−3. The results indicate that the minimum of the conduction band of CdIn2S4 is located atk=0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457881
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of CuIn5S8 single crystals (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1875-1879 
    Details
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Molte proprietà ottiche e di trasporto sono state studiate sui cristalli singoli di tipon di CuIn5S8. Si è determinato che il gap di energia a 0 K dalle misurazioni elettriche è 1.4 eV. Si è trovata un'anisotropia dell'effetto di magnetoresistenza e si è suggerito che i minimi della banda di conduzione siano situati in punti lungo le direzioni [100] nello spaziok. Si è trovata una banda di assorbimento ottico in una regione dell'infrarosso di (1÷1.6) μm, che è state attribuita alle transizioni delle piú basse bande di conduzione situate lungo le direzioni [100] a una piú alta banda di conduzione.
    Abstract: Резюме Исследуются некоторые транспортные и оптические свойства монокристаллов CuIn5S8 n-типа. Из электрических измерений определяется энергетическая щель при 0 К, которая составляет 1.4 эВ. Обнаружена анизотропия магниторезистивного эффекта. Предполагается, что минимумы зоны проводимости расположены в точках вдоль направления [100] вk-пространстве. Обнаружена оптическая зона поглощения в инфракрасной области (1÷1.6) мкм, которая связана с переходами из нижней зоны проводимости, расположенной вдоль направлений [100], В верхнюю зону проводимости.
    Notes: Summary Several transport and optical properties have been studied onn-type CuIn5S8 single crystals. The energy gap at 0 K was determined from the electrical measurements to be 1.4 eV. An anisotropy of the magnetoresistance effect was found and it was suggested that the minima of the conduction band were located at points along the [100] directions ink-space. An optical-absorption band was found in an infrared region of (1÷1.6) μm and was attributed to the transitions from the lowest conduction band situated along the [100] directions to an upper conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457879
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence of the layered compound CdInGaS4 (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 2002-2006 
    Details
    ISSN: 0392-6737
    Keywords: Photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si è misurata ed analizzata la fotoluminescenza del composto a strati CdInGaS4. Si è trovato che la larga banda di emissione a circa 1.9 eV è composta di tre bande con picchi a 2.16, 1.98 e 1.76 eV a 4.8 K. Queste bande sono dovute a transizioni da libero a legato o da donatore ad accettore. Si è trovata una nuova banda di emissione con picco a 2.38 eV. Questa banda mostra che l'intensità di picco dipende marcatamente dalla posizione nel cristallo ed è correlata a centri localizzati. Si discute l'origine dei centri.
    Abstract: Резюме Измеряется и анализируется фотолюминесценция слоистых соединений CdInGaS4. Обнаружено, что широкая полоса излучения около 1.95 эВ состоит из трех зон 2.16, 1.98 и 1.76 эВ при 4.8 К. Эти зоны связаны с переходами из свободного состояния в связанное или от донора к акцептору. Мы обнаружили новую полосу излучения вблизи 2.38 эВ. Эта полоса имеет интенсивность, которая зависит от положения в кристалле и связана с локализованными центрами. Обсуждается природа этих центров.
    Notes: Summary The photoluminescence of the layered compound CdInGaS4 was measured and analysed. The broad emission band at about 1.95 eV was found to be composed of three bands peaking at 2.16, 1.98 and 1.76 eV at 4.8K. These bands are due to free-to-bound or donor-to-acceptor transitions. We have found a new emission band peaking at 2.38 eV. This band shows that peak intensity markedly depends on the position in the crystal and is related to localized centres. The origin of the centres is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457901
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  • 8
    Electronic Resource
    Electronic Resource
    Selection of useful enzymes for xylobiose production.-Note-
    Amsterdam : Elsevier
    Journal of Fermentation and Bioengineering 70 (1990), S. 293 
    Details
    ISSN: 0922-338X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0922-338X(90)90075-8
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  • 9
    Electronic Resource
    Electronic Resource
    Immobilization of xylanase from Trichoderma viride (reesei) mutant K-10-34
    Amsterdam : Elsevier
    Journal of Fermentation and Bioengineering 71 (1991), S. 453 
    Details
    ISSN: 0922-338X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0922-338X(91)90264-H
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  • 10
    Electronic Resource
    Electronic Resource
    Inter- and intrasyngenic variation of Paramecium hemoglobin-I. Paramecium aurelia complex
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part B: Biochemistry and 75 (1983), S. 415-420 
    Details
    ISSN: 0305-0491
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-0491(83)90350-4
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