ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The p +-n-n + structures based on 6H-SiC films grown by chemical vapor deposition on the n + substrate were irradiated with 8-MeV protons with a dose of 8×1015 cm−2. In order to stabilize the material, it was annealed for 10 min at 450°C. As a result, the resistivity of the film was ρ=5×109 Ω cm. The effect of proton irradiation was studied by alpha spectrometry. The 5.77-MeV alpha particles were detected for both reverse and forward bias voltages applied to the structure. The results of the following two modes of detection were compared: (i) a particle traverses the structure without losing much of its energy, and (ii) a particle is stopped in the structure. It is shown that, in the former case and under a forward bias, a signal is formed by a mechanism involving a “through-conducting channel.” This makes it possible to determine the product of lifetime of electrons by their mobility. The situation in which the particle range R does not exceed the film thickness was analyzed; this situation is typical of spectrometry. It is noted that a decrease in R results in different behavior of the signal for the bias voltages of opposite polarity. Thus, for forward bias, the signal amplitude decreases more rapidly and for larger values of R.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1331796
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