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  • 1
    Electronic Resource
    Electronic Resource
    Superconducting InGaAs junction field-effect transistors with Nb electrodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1909-1911 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the design, fabrication, and characterization of superconducting In0.47Ga0.53As junction field-effect transistors (JFETs) with Nb source and drain electrodes. In0.47Ga0.53As has the advantage of combining large coherence length and high Schottky barrier transmission, making it a very attractive material on which to base superconducting FETs. At large voltages these devices behave as normal FETs in either enhancement or depletion modes, while at small voltages they act as Josephson junctions or super-Schottky diodes. Both normal and super- currents are controlled by the gate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102166
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  • 2
    Electronic Resource
    Electronic Resource
    Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1696-1698 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2×1018 cm−3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 A(ring)) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850 °C for nominal zero second.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101306
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of semiconductor heterojunctions using internal photoemission (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8470-8474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal photoemission is a photoelectric characterization technique commonly used to study semiconductor heterojunction characteristics. Previous analyses of internal photoemission including those of Fowler, Kane, and Powell have been well accepted and applied; however, the quantum effects were not fully taken into account. We examined the quantum effects on internal photoemission spectra and found that the photoemission yield, Y(hν), is proportional to (hν−ET)γ, where hν is the photon energy, ET is the threshold energy, and γ is a constant determined by the emitter density of states, the transmission probability, and the collector conduction band density of states, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362522
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  • 4
    Electronic Resource
    Electronic Resource
    Thin-film transistors based on well-ordered thermally evaporated naphthacene films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2925-2927 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on organic thin-film transistors fabricated using the small-molecule organic semiconductor naphthacene as the active layer material with device performance suitable for several large-area or low-cost electronics applications. We investigated naphthacene thin films deposited by thermal evaporation onto amorphous substrates held near room temperature. Using atomic-force microscopy and x-ray diffraction we find naphthacene films consist of a high density of submicron-sized grains with a surprisingly high degree of molecular order. Thin-film transistors fabricated using evaporated naphthacene films on thermally oxidized silicon substrates have field-effect mobility larger than 0.1 cm2/V s, current on/off ratio greater than 106, negative threshold voltage, and subthreshold slope of 1 V/decade. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1471378
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  • 5
    Electronic Resource
    Electronic Resource
    Solvent-induced phase transition in thermally evaporated pentacene films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3302-3304 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a solvent-induced phase transition in pentacene thin films, from a "thin film" phase to a bulk-like phase. X-ray diffraction indicates that as-deposited thermally evaporated pentacene films consist mainly of (001)-oriented pentacene with an elongated (001) plane spacing of 15.5±0.1 Å, and a minor amount with a (001) plane spacing of 14.5±0.1 Å. When such films are exposed to solvents such as acetone, isopropanol, or ethanol, the plane spacing of the entire layer shifts abruptly from the elongated (001) plane spacing to the bulk value and this shift is accompanied by a macroscopic change in film morphology. While molecular ordering is maintained as indicated by x-ray diffraction, thin film transistor performance is severely degraded, most likely as a result of the morphological changes in the film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123325
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  • 6
    Electronic Resource
    Electronic Resource
    Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1088-1090 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated organic thin-film transistor (OTFT)-driven active matrix liquid crystal displays on flexible polymeric substrates. These small displays have 16×16 pixel polymer-dispersed liquid crystal arrays addressed by pentacene active layer OTFTs. The displays were fabricated using a low-temperature process (〈110 °C) on flexible polyethylene naphthalate film and are operated as reflective active matrix displays. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448659
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  • 7
    Electronic Resource
    Electronic Resource
    Oligophenyl-based organic thin film transistors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3853-3855 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Organic thin film transistors (TFTs) have been fabricated using thermally evaporated films of the oligophenyls p-quaterphenyl (p-4P), p-quinquephenyl (p-5P), and p-sexiphenyl (p-6P). The field-effect mobility of these TFTs ranges from 10−2 cm2/V s for p-4P to 10−1 cm2/V s for p-6P with on/off current ratio from 105 to 106. These values are comparable to those achieved using the more widely studied organic semiconductors alpha-sexithienyl (α-6T) and pentacene. X-ray diffraction reveals a high degree of molecular ordering, believed to be important for obtaining high field-effect mobility in organic TFTs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120524
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  • 8
    Electronic Resource
    Electronic Resource
    Ohmic contacts to n-type silicon-germanium (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3563-3565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied both alloyed metal and ion-implanted Ohmic contacts to n-type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion-implanted contacts, annealed to 600 °C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117246
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  • 9
    Electronic Resource
    Electronic Resource
    Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1459-1461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical measurements of n+-GaAs/π-(Al,Ga)As/π-GaAs semiconductor-insulator-semiconductor (SIS) heterostructure capacitors and field-effect transistors (FET's) show that the (Al,Ga)As/GaAs heterojunction abruptness is well preserved for an arsine flash anneal of 1 s at temperatures up to ∼900 °C. The heterostructure stability is also preserved for a low-dose silicon implant across the (Al,Ga)As/GaAs heterojunction and subsequent annealing. Arsenic overpressure is found to be necessary, even for short time annealing, to prevent excessive As loss from a GaAs or (Al,Ga)As surface. High mobility enhance–deplete heterostructure SISFET's with sharp current versus voltage (I-V) turn-on characteristics have been fabricated using ion implantation and arsine flash anneal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98657
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of stress effects on the direct current characteristics of GaAs metal-semiconductor field-effect transistors through the use of externally applied loads (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1800-1802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes an experimental investigation of the effects of mechanical stress on the direct current (dc) electrical parameters in GaAs metal-semiconductor field-effect transistors, with the aim of separating out those effects which are direct manifestations of residual stresses in the completed device (e.g., piezoelectric effects) from stress effects which manifest themselves during the device processing (e.g., stress-enhanced diffusion during implant annealing). This study extends previous work by examining individual transistors under both tensile and compressive loads. Systematic yet nonmonotomic variations in the dc parameters observed in several devices also suggest the possibility of defect generation in the device structures, even at relatively low bulk stresses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99630
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