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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 78-79 (Apr. 2001), p. 111-118 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Der Anaesthesist 48 (1999), S. 236-241 
    ISSN: 1432-055X
    Keywords: Schlüsselwörter Paradoxe Luftembolie ; Venöse Luftembolie ; Offenes Foramen ovale ; Systemische Zirkulation ; Hyperbare Oxygenierung ; Key words Venous air embolism ; Paradoxical air embolism ; Pulmonary hypertension ; Patent foramen ovale ; Transpulmonary passage
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Abstract Paradoxical air embolism may occur with any venous air embolism. Air may either enter the systemic circulation through a patent foramen ovale or through transpulmonary passage of air. While small venous air emboli are mostly well tolerated, even the smallest paradoxical air emboli can have fatal consequences in the systemic circulation. Therapy and prophylaxis of paradoxical air embolism equal those of venous air embolism. This is especially true, since paradoxical air embolism may not become obvious under general anesthesia. More specific therapeutic regiments, such as hyperbaric oxygenation and the infusion of perfluorocarbons, are still in an experimental stage.
    Notes: Zusammenfassung Paradoxe Luftembolien können im Rahmen einer jeden venösen Luftembolie auftreten. Dabei gelangt die Luft entweder über ein offenes Foramen ovale in die systemische Zirkulation, oder aber transpulmonal. Während kleine venöse Luftembolien oftmals gut toleriert werden, können schon kleinste paradoxe Embolien fatale Folgen haben. Die Prophylaxe und Therapie der paradoxen Embolie entspricht weitgehend der der venösen Embolie. Dies gilt insbesondere deswegen, weil der paradoxe Anteil einer Luftembolie unter Allgemeinanästhesie nicht sofort erkennbar wird. Spezifischere Therapieansätze stellen die hyperbare Oxygenierung sowie die Infusion von Perfluorokarbonen dar, allerdings befinden sie sich noch im tierexperimentellen Stadium.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 63-64 (Dec. 1998), p. 473-480 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2553-2558 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film CdS/CdTe solar cell structures have been investigated by spatially resolved cathodoluminescence (CL) spectroscopy. A postgrowth CdCl2 treatment of the CdTe layer was found to homogenize the distribution of acceptor-like defects or impurities leading to optimized p-type conversion of the polycrystalline CdTe. For values of the growth temperature (TG) of about 600 °C, the intermixed region between the CdS layer and CdTe grains is surprisingly thin. However, for TG as large as 630–650 °C, a gradual decrease of the CdTe band gap due to sulfur intermixing appears to be present up to 0.6 μm from the CdS/CdTe interface. The CL spectra of the CdS window layer exhibit two broad bands centered at 1.72 (red) and 2.04 eV (yellow). The yellow one is quenched by the CdCl2 treatment, indicating passivation or promoted outdiffusion of Cd interstitials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 673-675 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using cathodoluminescence spectroscopy, we investigate the dependence of the transition energy and quantum efficiency of a GaN/(In,Ga)N multiple quantum-well structure on both the temperature and excitation density. A coupled rate-equation model is introduced to explain the experimental results. Polarization field screening has been incorporated in a realistic manner by solving these coupled rate equations self-consistently along with the Schrödinger and Poisson equations. Our study suggests that exciton localization increases the internal quantum efficiency significantly. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 396-398 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the spectrally resolved cathodoluminescence intensity from a 3.5- nm-thick GaAs-AlGaAs single quantum well prepared by growth interrupted molecular beam epitaxy has been investigated between 5 and 120 K. As the temperature increases, we observe thermally activated carrier transfer from wider quantum well regions to narrower ones. This observation indicates that there is exciton localization within the wider quantum well regions, one or two monolayers larger in width, at low temperatures. The contrast in spectrally resolved cathodoluminescence images of the quantum well is significantly influenced by this exciton localization and therefore does not necessarily reflect the lateral island distribution. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1211-1216 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of exciton diffusion and localization on the cathodoluminescence (CL) intensity distribution using a scanning electron microscope has been investigated in a single quantum well and a multiple quantum well structure prepared by growth interrupted molecular beam epitaxy. Although of different origin, lateral variations of the exciton confinement energy occur in both samples on a length scale much larger than the exciton Bohr radius. The spectral and spatial CL intensity distribution is substantially influenced by diffusion of excitons to quantum well regions with low exciton confinement energy. The CL micrographs from both quantum well structures exhibit a similar bright/dark pattern with a typical length scale, which is determined by the exciton diffusion length in this material. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2382-2384 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the cathodoluminescence (CL) intensity originating from GaAs-Al0.3Ga0.7As multiple quantum wells has been measured between 5 and 300 K. The CL intensity drops exponentially by two orders of magnitude above 100 K with an activation energy of 83 meV between 140 and 200 K and 145 meV between 250 and 300 K. These energies are comparable to the effective barrier height of an electron or hole and an exciton, respectively. The decrease of the CL intensity is therefore attributed to thermal re-emission of carriers and excitons out of the quantum well.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 836-838 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatially resolved cathodoluminescence (CL) spectroscopy in connection with scanning electron microscopy performed on cubic (c) GaN between 5 and 300 K reveals that at low temperatures the CL spectra of c-GaN single crystals consist of four well-separated lines. The two lines highest in energy were previously identified as excitonic and donor-acceptor transitions, respectively. Here, we show that the lines lowest in energy are due to an additional free-to-bound transition, involving an impurity different from those related to the donor-acceptor transition, and its phonon replica. The CL spectra of c-GaN layers, while being rather broad, are composed of these four lines. Moreover, at 300 K the spectra of the layers and of the crystals are both dominated by the excitonic transition and closely resemble each other. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2349-2351 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral variations of the exciton confinement energy Ecx have been investigated in a GaAs-AlGaAs multiple quantum well (MQW) structure using cathodoluminescence (CL) imaging in a scanning electron microscope. The MQW structure was grown by molecular beam epitaxy on a 2° misoriented GaAs substrate. The CL image of a defined MQW region does not change its lateral intensity distribution after removing different numbers of quantum wells by etching, indicating a correlated variation of Ecx between different quantum wells on a length scale of several μm. The variation of Ecx is connected to a mound like surface topography. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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