Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
71 (1992), S. 5706-5708
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A method is presented for the Auger generation suppression in narrow-gap semiconductors using the magnetoconcentration effect for the case when all the generation-recombination mechanisms (Auger, radiative, and Shockley–Read) are taken into account. A numerical solution is given for the kinetic equation determining carrier concentration distribution in a thin semiconductor slab placed in an electric and a magnetic field. The results of the numerical calculation show that the Auger generation suppression becomes very efficient when the concentration of Shockley–Read recombination centers is small enough.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350505
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