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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2597-2599 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments to study negative ion densities have been carried out using the photodetachment effect in a rf plasma in CF4. Electrons are detached from the negative ions under the influence of the pulse of a Nd:YAG laser. The induced increase of the electron density is measured as a function of time using the shift of the resonance frequency of a microwave cavity containing the plasma. The negative ion density [F−] is found to be about (4±1)×1015 m−3, a factor 4±1 higher than the electron density.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy and atomic force microscopy are employed in the characterization of the first stages in the growth of carbon layers on a (001) Si substrate which is not scratched with diamond powder before placing it in an Ar–2%CH4–H2 plasma discharge. Results show that the first layers could be formed in SiC grains where the carbon diamond particles nucleate. The high nucleation density of 1.109–5.109 nuclei. cm−2 and the low aggregates density lead to a smooth surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2643-2645 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work is devoted to the study of the expansion of a Ar-CH4 microwave plasma. Diagnostics have been performed within the reactor using both an electrostatic Langmuir double probe and spatially resolved emission spectroscopy. We have proven that the plasma jet results from electromagnetic surface wave propagation (ne≥nec=3.6×1011 cm−3, Te∼23 000–46 000 K) and have shown that injection of methane into the jet decreases ne and Te, and thus limits the striking conditions. Such an expanding plasma finds applications in plasma enhanced chemical vapor deposition technology. It can be used to create simple radicals close to a substrate and thus limits their destruction on the reactor walls.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1572-8986
    Keywords: Electric discharge ; reactive ionized gases ; thin film deposition ; silicon nitride ; spectroscopic diagnostic
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A detailed experimental investigation of a D.C. discharge in an argon-silanenitrogen gas mixture is undertaken using mainly spatially resolved spectroscopy. Discharge parameters are studied as functions of the gas mixture composition, and the influence of nitrogen concentration on the dissociation phenomena of SiH4 and on dehydrogenation mechanisms of the growing film surface is particularly discussed.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1572-8986
    Keywords: Silane-nitrogen reactions ; flowing post-discharge ; silicon nitride thin-film deposition
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Silicon nitride thin films are deposited on silicon wafers at room temperature when silane gas is injected in a nitrogen flowing post-discharge. Reactive processes involving siane molecules and long-lifetime nitrogen species are studied, pointing out the nonreactivity of the N2(A3ζ u + ) metastable state, the low contribution of the vibrationally excited nitrogen ground-state molecules, and the high reactivity of N(4S) atoms. Spectroscopic observations performed in the reaction region are correlated with thin-film characteristics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Plasma chemistry and plasma processing 18 (1998), S. 137-151 
    ISSN: 1572-8986
    Keywords: Microwave plasma ; post-discharge ; CH2 reactivity ; argon metastable density
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract This work is devoted to the study of the reactivity of CH 2 radical in the post-discharge of an Ar–CH 4 microwave plasma. These radicals are selectively produced using the energy transfer reaction between argon metastable Ar( 3P2 ) and CH 4 , This paper consists of three parts. The first part is the characterization of the argon metastable source. We measure the absolute argon metastable density within the argon microwave post-discharge, then we select the best discharge parameters in order to obtain the best conditions to produce Ar( 3P2 ) species. The second part is related to the mass spectrometry study of species observed within the post-discharge and produced when methane is injected in an argon microwave post-discharge. We measure the absolute densities of the hydrocarbon species. Results show that the main species observed in the post-discharge are CH 4 , C 2 H 2 then C 2 H 6 , C 2 H 4 and the radical CH 3. However, the radical CH 2 is only detectable for a low CH 4 density injected. The third part is related to the study of the methylene radical (CH 2 ) reactivity in an Ar–CH 4 post-discharge. We measure the reaction rate constant of Ar( 3P2 ) energy transfer to $$CH_4 ;Ar(^3 P_2 ) + CH_4 \underset{\raise0.3em\hbox{$\smash{\scriptscriptstyle\rightarrow}$}}{k} _1 CH_2 + 2H + Ar$$ we find a value k1 ranging from 5.7×10 −16 to 1.2×10 −16 m 3 /s. This value is in good agreement with the results proposed in the literature. Then we use this first reaction to produce CH 2 and to study in post-discharge the reaction $$CH_2 + C^x H_y \underset{\raise0.3em\hbox{$\smash{\scriptscriptstyle\rightarrow}$}}{k} _1 $$ products. In this mechanism C x H y are stable hydrocarbon molecules present in the post-discharge (mainly CH 4 ). We measure the reaction rate constant (k2), which ranges from 5.62×10 −16 to 1.1×10 −15 m 3 /s. These results are discussed, and we propose mechanisms that can explain such a high reactivity.
    Type of Medium: Electronic Resource
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