Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 94-96
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Monolithic optical logic devices 1.5–5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry–Perot structure grown by molecular beam epitaxy. They show reduced energy requirements (more than an order of magnitude smaller than the unetched heterostructure), uniform response over small arrays, negligible crosstalk at 3 μm center-center spacing, ∼150 ps recovery time, and thermal stability at 82 MHz operating frequency. All experiments were performed at room temperature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98607
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