Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
72 (1992), S. 311-312
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ohmic contact properties of Pd/Ti bilayer to heavily doped n+-polycrystalline silicon, prepared by electron beam evaporation, were studied by using both electrical measurements and Rutherford backscattering spectroscopy. The electrical behavior of the contacts at different sintering conditions is explained by the corresponding chemical composition changes at the metal/silicon interface during the sintering process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352140
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