ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electron and hole transport in compensated InGaAsN ((approximate)2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale ((very-much-greater-than) mean free path) material inhomogeneities, not a random alloy-induced mobility edge. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126989
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