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  • 1
    Electronic Resource
    Electronic Resource
    Ar ion laser-assisted chemical etching of molybdenum foils in air (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1667-1672 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ar ion laser-assisted chemical etching of Mo foils in air is reported. Etching occurred due to local heating by the focused laser beam which induced the Mo oxidation to form the volatile MoO3 at the elevated sample temperature. Holes and slots with slightly tapered walls and a minimum hole diameter of less than 10 μm could be etched in 25-, 50-, and 150-μm-thick foils. The hole diameters increased with increasing laser power and at any given laser power they decreased with increasing sample thickness. Etch-rate measurements as a function of the laser power were performed with static and scanned samples. Threshold powers for etching through the Mo foils were found. They increased with increasing sample thickness. Above these thresholds the etch rates increased rapidly with increasing laser power and rates as high as dz/dt=50 μm/s in the static mode and dV/dt=20×50×300 μm3/s in the scanning mode were obtained in a 50-μm-thick Mo foil under 10-W laser irradiation. Average sample temperatures as functions of the laser power in the scanning mode of operation where thermal equilibrium exists were measured by the use of optical pyrometry. A model which relates the laser power to the etch rate and temperature of the sample is presented and tested for agreement with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336428
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature of molecular vapor in laser ablation of CuCl (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5072-5074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical emission spectra are studied from the vapor produced by irradiation of polycrystalline CuCl, under vacuum, by pulsed excimer laser radiation at 248 and 308 nm. For fluences φ(approximately-less-than)0.4 J/cm2 (intensity I(approximately-less-than)20 MW/cm2), well-resolved molecular CuCl emission bands and weak atomic Cu lines are observed. At higher fluences, the CuCl emission increases and develops into a broad continuum due to the broadening and overlap of the bands, whereas the Cu atomic line emission increases more rapidly. At even higher fluences (φ(approximately-greater-than)1 J/cm2, I(approximately-greater-than)50 MW/cm2), the Cu atomic emission dominates the entire spectrum. A thermal equilibrium model is used to calculate the vibrational-rotational temperature of the emitting CuCl molecules as a function of fluence by fitting the experimentally observed emission bands. Temperatures in the range 500〈T〈2000 K for fluences in the range 0.27〈φ〈0.4 J/cm2 were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335287
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  • 3
    Electronic Resource
    Electronic Resource
    Organometallic chemical vapor deposited layers of stabilized zirconia on sapphire as a substrate for laser ablated YBa2Cu3O7−x thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 301-303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrates of (11¯02) sapphire single crystals were covered with Y2O3 stabilized ZrO2 (YSZ) thin films deposited from 2,2,6,6 tetramethyl-3, 5-heptanedione precursors of Zr and Y by organometallic chemical vapor deposition. The YSZ layers were indeed oriented on the (100) planes as established by x-ray diffraction. Thin films of YBa2Cu3O7−x (YBCO) were then deposited on top of the YSZ layer by laser ablation. A critical temperature (R=0) of 90 K was obtained which is among the highest observed for YSZ. However, the critical current density at 77 K was only of the order of 103 A/cm2, which is common of polycrystalline YBCO deposited on YSZ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104668
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of all YBa2Cu3O7 Josephson edge junctions prepared by in situ laser ablation deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 634-636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film YBa2Cu3O7-YBa2Cu3O7 edge junctions of 0.4×10 μm2 cross section were prepared in situ by a multistep laser ablation deposition process. The fabrication time was about 3 h and the yield of good devices was 50%. Typical junctions reached zero resistance at 72 K and had a critical current density Jc of 300 A/cm2 at 70 K. Their Jc as a function of temperature increased slowly with decreasing temperature down to 65 K and much faster below it. In the region of low Jc we observed suppression of the critical current by a magnetic field. Under microwave radiation clear Shapiro steps were observed whose magnitude versus the microwave field agreed qualitatively with the resistively shunted junction model of a current biased junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104552
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic properties of laser deposited films of Y-Ba-Cu-O (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5070-5072 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of YBa2Cu3O7−x prepared by laser ablation deposition show epitaxial growth on (100) SrTiO3 substrates with the c axis perpendicular to the plane of the film. With the magnetic field (H) parallel to the c axis, critical currents of up to 40 MA/cm2 from magnetization measurements are obtained. With H perpendicular to the c axis, various magnetization measurements with field cooling in 40 kOe indicated strong pinning effects with a calculated critical current density significantly higher than that observed in the parallel field configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344673
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  • 6
    Electronic Resource
    Electronic Resource
    Integrated inductance bridge package for ac susceptibility measurements of superconducting thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1759-1760 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a simple integrated self-inductance bridge package for measuring the ac susceptibility of high-Tc superconducting thin films. The package has good sensitivity and baseline drift rejection, and employs mechanical clamping for easy sample interchange.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141096
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  • 7
    Electronic Resource
    Electronic Resource
    All high Tc edge junctions and SQUIDs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 686-688 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first observations of superconducting quantum interference in multilevel, all high Tc, lithographically patterned edge junction structures. The current-voltage characteristics are nonhysteretic and have well-defined critical currents. The dynamic resistance is independent of current above the critical current. These devices show periodic sensitivity to magnetic fields and low levels of magnetic hysteresis up to temperatures around 60 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102706
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  • 8
    Electronic Resource
    Electronic Resource
    Flux creep characteristics in high-temperature superconductors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 680-682 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the voltage-current characteristics of YBa2Cu3O7−δ epitaxial films within the flux creep model in a manner consistent with the resistive transition behavior. The magnitude of the activation energy, and its temperature and magnetic field dependences, are readily derived from the experimentally observed power law characteristics and show a (1−T/Tc)3/2 type of behavior near Tc. The activation energy is a nonlinear function of the current density and it enables the determination of the shape of the flux line potential well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103310
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  • 9
    Electronic Resource
    Electronic Resource
    Y1Ba2Cu3O7−δ thin films grown by a simple spray deposition technique (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 163-165 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preparation of high Tc superconducting thin films of Y1Ba2Cu3O7−δ on (100) single crystals of MgO, ZrO2 with 9% Y2O3 (yttria stabilized zirconia, or YSZ), and SrTiO3 using a simple spray deposition technique is described. Typical film growth procedure involves (a) the spraying of a stoichiometric solution of the nitrate precursors on the heated substrate (180 °C), (b) prebaking in air of the sprayed film (20 min at 500 °C), and (c) oven annealing of the film under flowing O2 (900–950 °C followed by slow cooling to 200 °C in about 3 h). X-ray diffraction analysis of the films after each of the growing steps mentioned above shows primarily the presence of crystalline phases of the nitrates, the oxides, and the orthorhombic superconducting phase, respectively. Resistivity versus temperature measurements show that the onset and completion of the superconductive transition occur at 92 and 87 K, respectively, in films on YSZ substrate; at 95 and 80 K, respectively, in films on SrTiO3 substrate; and at 82 and 77 K, respectively, in films on MgO substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99039
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  • 10
    Electronic Resource
    Electronic Resource
    Particulates reduction in laser-ablated YBa2Cu3O7−δ thin films by laser-induced plume heating (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2144-2146 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental demonstration of reduction in the number and size of particulates formed in the laser ablation deposition of YBa2Cu3O7−δ thin films is obtained by the use of a second laser which further heats and fragments the blowoff material in the plume formed by the first laser. This results in a smoother film with higher critical current density as compared to that obtained without the second laser irradiation of the plume.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103239
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