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  • 1
    Electronic Resource
    Electronic Resource
    Resistive measurement of the temperature dependence of the penetration depth of Nb in Nb/AlOx/Nb Josephson junctions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8163-8167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the penetration depth of Nb films was determined from resistive transitions of Nb/AlOx/Nb Josephson junctions in a constant magnetic field applied parallel to the junction planes. Distinct resistance peaks were observed as temperature decreases and those peaks were found to appear when the total flux threading the junction equals an integral multiple of the flux quantum. From this condition, the penetration depth at those peak positions has been determined. The temperature dependence was well described by either the dirty local limit or the two-fluid model. This method can be useful for a highly fluctuating system such as high-temperature superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356515
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  • 2
    Electronic Resource
    Electronic Resource
    Large anisotropy in the upper critical field of sputtered thin films of superconducting Tl-Ba-Ca-Cu-O (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2560-2562 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The upper critical field Bc2 provides the most direct measure of the intrinsic anisotropy of a superconductor. For highly oriented, sputtered thin films of the high-temperature superconductor Tl2Ba2CaCu2Ox, we find a Bc2 anisotropy of at least 70, which exceeds similar measurements on thin films and single crystals of the high-temperature superconductors Bi-Sr-Ca-Cu-O and YBa2Cu3Oy. We discuss why the midpoints of the resistive transitions, used in these measurements, may be appropriate for defining the intrinsic Bc2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100531
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  • 3
    Electronic Resource
    Electronic Resource
    Electrophoresis deposition of carbon nanotubes for triode-type field emission display (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1547-1549 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A triode-type field emission display has been fabricated using carbon nanotube emitters. Purified single walled carbon nanotubes were selectively deposited onto a cathode electrode in a triode-type structure by an electrophoresis. Emission current was modulated with gate potentials of 100–300 V. A high brightness of 1000 cd/m2 with uniform emission was obtained at 900 V at the anode and 200 V at the gate. The fluctuation of emission current was found to be less than 5% in a fully sealed field emission display. Selective deposition of carbon nanotubes by electrophoresis shows high feasibility for triode-type field emission displays. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1349870
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  • 4
    Electronic Resource
    Electronic Resource
    Fully sealed, high-brightness carbon-nanotube field-emission display (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3129-3131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fully sealed field-emission display 4.5 in. in size has been fabricated using single-wall carbon nanotube (CNT)-organic binders. The fabricated displays were fully scalable at low temperature, below 415 °C, and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1 V/μm and field emission current of 1.5 mA at 3 V/μm (J=90 μA/cm2) were observed. Brightness of 1800 cd/m2 at 3.7 V/μm was observed on the entire area of a 4.5 in. panel from the green phosphor-indium–tin–oxide glass. The fluctuation of the current was found to be about 7% over a 4.5 in. cathode area. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125253
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  • 5
    Electronic Resource
    Electronic Resource
    Amorphization of single-crystalline silicon by thermal-energy atomic hydrogen (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 91-93 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si(100)-(2×1) was exposed to gas-phase atomic hydrogen, H(g), at various substrate temperatures Ts between 115 and 300 K. No low-energy electron diffraction patterns could be obtained from such hydrogenated surfaces. In temperature-programmed desorption measurements, SiHx(x=1–3) radical species as well as SiH4 desorbed at Ts between 600 and 1000 K, in addition to β1- and β2–H2 desorption peaks. Combined together, the results indicate that amorphous hydrogenated silicon (a-Si:H) films are formed. While surface etching competes, a-Si:H formation dominates. Once formed, a-Si:H further suppresses etching. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124286
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  • 6
    Electronic Resource
    Electronic Resource
    Meandering grain boundaries in YBa2Cu3Oy bi-crystal thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2561-2563 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Artificially induced [001] tilt grain boundaries in epitaxial YBa2Cu3Oy (YBCO) thin films were prepared by deposition onto SrTiO3 bi-crystal substrates and subsequently examined by transmission electron microscopy and atomic force microscopy (AFM). It was found that the YBCO grain boundary deviated from the path defined by the underlying substrate boundary, with the "meandering'' YBCO boundary only generally following the path defined by the boundary in the underlying substrate. The AFM studies suggest this "meandering'' behavior is related to the nucleation and growth mechanisms of the film, and based on this, we were able to vary the magnitude of the meandering by changing the growth conditions. The implications of this meandering behavior are significant, suggesting potential variations in electrical behavior from point to point along these boundaries. This effect is likely to be exacerbated by reduced junction linewidths and may lead to inconsistent behavior in devices which utilize this type of boundary. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113167
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  • 7
    Electronic Resource
    Electronic Resource
    High critical field anisotropy of superconducting Bi-Sr-Ca-Cu oxide from highly oriented thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2080-2082 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting films of Bi-Sr-Ca-Cu oxides have been grown on MgO substrates by multitarget magnetron sputtering. After post-annealing in an oxygen atmosphere, zero resistance was obtained at about 80 K. X-ray diffraction indicates a high degree of preferential growth of the c axis perpendicular to the substrate. Measurements of the upper critical field Bc2(T) of these films show critical field slopes (B'c2≡−dBc2/dT at Tc) of 8.5 and 0.56 T/K, respectively, for B parallel and perpendicular to the substrate. The anisotropy of ∼15 and the Bc2(parallel) are the highest values yet reported for high-temperature superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99753
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical transport properties of [001] tilt bicrystal grain boundaries in YBa2Cu3O7 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 120-122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The zero-field electrical transport properties of 24° [001] tilt bicrystal grain boundaries in YBa2Cu3O7 were found to be in excellent agreement with the Ambegaokar–Halperin model over an extended range of currents and voltages. This model gives a firm basis for characterizing and comparing boundaries, and provides two independent measures of the critical current, which were proportional to (1−T/Tc)2 close to the transition temperature Tc. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116775
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