ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Phase-pure epitaxial Tl2Ba2Ca2Cu3O10 thin films have been grown on single crystal (110) LaAlO3 substrates using an improved metal-organic chemical vapor deposition process. First, Ba-Ca-Cu-Ox precursor films are grown on LaAlO3 (110) substrates using Ba(hfa)2⋅tet, Ca(hfa)2⋅tet, and Cu(hfa)2 (hfa=hexafluoroacetylacetonate; tet=tetraglyme) as volatile metalorganic precursors. Thallium is then incorporated into the films during a post-anneal in the presence of a Tl2O3, BaO, CaO, CuO powder mixture at 820 °C for 12 h in a flowing 10% O2/Ar atmosphere. The films have a transport-measured Tc=115 K and Jc=1.5×105 A/cm2 (80 K), while magnetic hysteresis measurements yield Jc=6×105 A/cm2 (77 K). Preliminary surface resistance measurements give Rs=0.35 mΩ at 5 K, 10 GHz.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112638
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