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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5781-5784 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed finite size effects in thin films (20 A(ring)〈L〈1000 A(ring)) of CuMn with concentrations of 4%, 7%, and 13.5% Mn. In order to have measurable magnetization the samples are produced in the form of multilayers with silicon or copper interlayers. The interlayers are sufficiently thick (tSi =70 A(ring); tCu =300 A(ring)) so that there are no observable interactions between the CuMn layers. The samples are characterized structurally by low-angle x-ray diffraction, imaging, and x-ray fluorescence using a scanning transmission electron microscope. The metallic films are also characterized by measuring the electrical resistivity of both multilayer and single-layer CuMn samples. The temperature Tg of the peak in the dc susceptibility shifts with film thickness L as (T0g−Tg)/T0g∼L−λ for all concentrations and for both Si and Cu interlayers. The results for 4% Mn will be discussed in detail and compared with previously published data on 7% Mn.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5240-5242 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to ascertain the universality class of the long-range metallic spin glass Cu:Mn, extensive measurements of the longitudinal component of the zero-field-cooled (Mzfc) and field-cooled (Mfc) magnetization have been made. Measurements were made in both bulk Cu:Mn and Cu:Mn/Cu multilayer films in magnetic fields between 2 and 15 000 G. Mean field calculations of a Heisenberg spin glass with weak Dyzaloshinskii–Moriya-type anisotropy predict Ising-like behavior at low fields crossing over to Heisenberg behavior in high fields. Evidence consistent with crossover behavior in the transition temperature Tg (where Tg is defined by the onset of strong irreversibility in the magnetization, Mirr = Mfc − Mzfc) was observed at fields similar to previous magnetic-field-dependent studies. From the low-field extrapolation of Tg to H=0, the zero-field Ising-like transition temperature was obtained while from the high-field extrapolation to H=0 the zero-field Heisenberg transition temperature was obtained, the latter significantly lower than the former. This analysis, applied to the multilayer systems, suggests that the lower critical dimension of both Ising and Heisenberg spin glasses lies between two and three.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5252-5254 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic properties of Cu (13.5 at. % Mn) spin-glass films of various thicknesses have been investigated in a superconducting quantum-interference device (SQUID) magnetometer. The films are produced in a dc-sputtering system and fabricated in the form of multilayer samples. Utilizing zero-field-cooled magnetization and ac-susceptibility measurements, the time-dependent susceptibility has been probed over eight decades in time (10−4–104 s). Drastic changes of the dynamics are found upon varying the film thickness from 104 to 20 A(ring). The most significant feature is a crossover from a behavior typical for bulk spin glasses for the 104-A(ring) film, with a finite critical temperature and a critical slowing down that can be accurately described by a conventional power-law divergence, to a slowing down for the very thin films that obeys a generalized Arrhenius law with a zero-temperature critical point. Thus, these measurements indicate a crossover from three- to two-dimensional spin-glass dynamics when one spatial dimension is gradually diminished to a finite size.
    Type of Medium: Electronic Resource
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