Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 2373-2375
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Silicon carbide thin films have been deposited by reactive magnetron sputtering in a pure hydrogen plasma at substrate temperatures, Ts, ranging between 100 and 600 °C. The infrared (IR) absorption spectra and the transmission electron microscopy observations reveal an onset of crystallization at Ts as low as 300 °C. The crystalline fraction increases with Ts and reaches a value of about 60% for Ts=600 °C. Both refractive index n and room temperature dark conductivity σd(RT) show quite consistent behaviors with the structural evolution of the layers. Thus n increases from 1.9 to 2.4 and σd(RT) improves by six orders of magnitude when Ts is raised from 100 to 600 °C. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126350
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