ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The variation of nitrogen doping concentration was systematically investigated withrespect to the amount of silicon powder added to the SiC powder for growing n-type 6H-SiC singlecrystal by the sublimation method. To change intentionally the Si content in the SiC powder, 0wt% to2wt% of a silicon powder was added to first-thermal treated SiC powder and the mixed powder wastreated again at 1800oC for 3 hours to eliminate excess free-metallic silicon. Nitrogen doped 6H-SiCsingle crystals were grown by using 2nd-thermal treatment SiC powder at fixed N2/(Ar + N2) (3%).The nitrogen doping concentration of 6H-SiC crystals increased with increasing Si content in the SiCpowder. In this work, we could identify that the additional silicon powder in SiC powder plays a rolein the enhancement of nitrogen doping in 6H-SiC crystals grown by the sublimation method
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.55.pdf
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