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  • 1
    Electronic Resource
    Electronic Resource
    Analysis of the adjuvant effect of hemoglobin on mortality in a rat peritonitis model
    Amsterdam : Elsevier
    Free Radical Biology and Medicine 9 (1990), S. 181 
    Details
    ISSN: 0891-5849
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0891-5849(90)90817-3
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  • 2
    Electronic Resource
    Electronic Resource
    Extended defect evolution in boron-implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1254-1256 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of extended defect evolution on the anomalous diffusion of ion-implanted boron during rapid thermal annealing (RTA) have been studied using transmission electron microscopy and secondary-ion mass spectroscopy. It has been found that for low-dose boron implants (〈1×1014 cm−2), no extended defects can be observed after RTA at 1000 °C, and the anomalous diffusion saturates within less than 10 s. However, extended defects are developed for high-dose boron implants (〉5×1014 cm−2), and the anomalous diffusion persists for a much longer time and is dose dependent. Extended defect evolution has been characterized and correlated with the observed anomalous boron diffusion behaviors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102529
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  • 3
    Electronic Resource
    Electronic Resource
    Anomalous transient diffusion of boron implanted into preamorphized Si during rapid thermal annealing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2316-2318 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of boron implanted into preamorphized silicon has been studied using secondary-ion mass spectroscopy and transmission electron microscopy. A surface preamorphized layer was created by double silicon ion implantation and the as-implanted boron profiles were confined completely within the preamorphized layer. Results show that boron diffusion during rapid thermal annealing (RTA) is anomalous in nature, and that the magnitude of the anomalous diffusion depends upon the RTA temperature. While RTA at 1150 °C shows an enhanced boron diffusion compared to that in single crystalline samples, a reduced diffusion is observed in preamorphized samples annealed at 1000 °C. Results are discussed in terms of the difference in the defect evolution during RTA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102048
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  • 4
    Electronic Resource
    Electronic Resource
    Identification of new dinucleotide-repeat polymorphisms in factor VIII gene using fluorescent PCR (2005)
    Oxford, UK : Blackwell Science Ltd
    Haemophilia 11 (2005), S. 0 
    Details
    ISSN: 1365-2516
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary.  Haemophilia A is an X-linked inherited bleeding disorder. Linkage diagnosis using polymorphic markers in the factor VIII gene is used to archive the carrier detection and prenatal diagnosis. The objective of this study was to establish the allele frequency and heterozygosity rate (HR) of two new intragenic markers (Intron 1 and 24) and other markers (Intron 13 and 22) using fluorescent PCR. Five hundred unrelated healthy women were screened and haemophilic family was studied for carrier detection and prenatal diagnosis. We observed five different alleles of Intron 1, 10 of Intron 24, nine of Intron 13 and six of Intron 22. The observed HR for Intron 1, 24, 13 and 22 were 34.0, 35.2, 53.0 and 42.6%, while the expected HR were 33.6, 36.3, 50.1 and 44.3%, respectively. Heterozygosity rate with the combined use of all four intragenic markers was 76.6% (383/500). In prenatal diagnosis of a haemophilic family, a pregnant woman was heterozygous with three intragenic (Intron 1, 13 and 22) and one extragenic St14 VNTR (DXS52) markers. She was considered to be a carrier, and she carried a male foetus by AMXY PCR and chromosome analysis of amniocytes. Foetus did not have mutant haplotype as his uncle, suggesting a normal male status. Our study demonstrates the utility of two new intragenic markers in FVIII gene for carrier detection and prenatal diagnosis of haemophilic families.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2516.2005.01064.x
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  • 5
    Electronic Resource
    Electronic Resource
    Herbicidal potential and quantification of causative allelochemicals from several Compositae weeds (2003)
    Oxford, UK : Blackwell Science Ltd
    Weed research 43 (2003), S. 0 
    Details
    ISSN: 1365-3180
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Compositae plants contain biologically active substances that are allelopathic to weed species. Aqueous extracts from leaves of 16 plants were bioassayed against lucerne (Medicago sativa) to determine their allelopathic effects, and the results showed the highest inhibition for the extracts from Lactuca sativa, Xanthium occidentale and Cirsium japonicum. The extracts applied to filter paper in Petri-dish bioassay tests significantly inhibited root growth of lucerne. Extracts of 40 g dry tissue L−1 from L. sativa, X. occidentale and C. japonicum were completely inhibitory to lucerne root growth, but hypocotyl growth of lucerne was less sensitive. Although allelopathic effects of methanol extracts were much less than those of coumarin or alachlor, early seedling growth of both lucerne and Echinochloa crus-galli was significantly reduced by methanol extracts. Mixture of L. sativa, X. occidentale and C. japonicum extracts had more inhibitory effects on test plants than each single extract treatment. By means of high-performance liquid chromatography, responsible causative allelopathic substances present in L. sativa, X. occidentale and C. japonicum were isolated from various fractions and identified as coumarin, trans-cinnamic acid, o-coumaric acid and p-coumaric acid. These results suggest that some Compositae have various herbicidal potentials, and that their activities, types and amount of causative compounds differ, depending on the plant species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.0043-1737.2003.00361.x
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  • 6
    Electronic Resource
    Electronic Resource
    Bimodal roughness of heterointerface in quantum wells analyzed by photoluminescence excitation spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 338-340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence excitation (PLE) studies were performed on GaAs-Al0.25Ga0.75As quantum wells (QWs) with fractional monolayer differences. The quantized PLE peaks and their submonolayer shifts clearly show that the heterointerface of thin QWs prepared by growth-interrupted molecular beam epitaxy has islands which extend out a lateral dimension larger than 100 A(ring), but they themselves have the microroughness smaller than 30 A(ring). The result of this work using exciton as the probe provides a clear evidence supporting the bimodal roughness model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114205
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  • 7
    Electronic Resource
    Electronic Resource
    Dopant-enhanced low-temperature epitaxial growth of in situ doped silicon by rapid thermal processing chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 80-82 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using rapid thermal processing chemical vapor deposition. Heavily arsenic-doped epitaxial layers with very abrupt dopant transition profiles and relatively uniform carrier distributions have been achieved at 800 °C. In addition, it is found that defect formation is closely related to dopant concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104452
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  • 8
    Electronic Resource
    Electronic Resource
    Relaxed GexSi1−x films grown by rapid thermal processing chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1775-1777 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality, epitaxial, relaxed GexSi1−x layers have been grown by rapid thermal processing chemical vapor deposition. Relaxation is believed to be due primarily to the high deposition temperature of 1000 °C and occurred through the formation of an asymmetric misfit dislocation network aligned along the 〈110〉 directions and confined to the interface. The only other defects observed were single threading dislocations at the ends of misfit dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103096
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  • 9
    Electronic Resource
    Electronic Resource
    Thick AlxGa1−xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2513-2515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant charge transfer, which differs from tunneling, over thick AlxGa1−xAs barrier in GaAs/AlxGa1−xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-A(ring)-thick Al0.3Ga0.7As barrier is universally "leaky'' with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117724
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  • 10
    Electronic Resource
    Electronic Resource
    Boron-enhanced low-temperature Si epitaxy by rapid thermal processing chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 474-476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that epitaxial growth temperatures can be lowered by in situ boron incorporation using rapid thermal processing chemical vapor deposition (RTPCVD). Heavily boron-doped epitaxial layers with very abrupt dopant transition profiles have been grown at 800 °C. Carrier concentrations as high as 5×1019 cm−3 were obtained with defect densities of the order of 102–103 cm−2. The film quality and surface morphology were closely related to dopant concentration. Higher dopant concentrations improved surface morphology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107861
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