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  • 1
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7−δ films deposited by a novel ion beam sputtering technique (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 301-303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting films of YBa2Cu3O7−δ have been synthesized in a novel ion beam sputter deposition system which features a rotating target holder with BaO2, CuO, and Y2O3 as the sputtering targets. The dwell time of the ion beam on each oxide target is determined by a computer-controlled feedback loop using the signal from a programmable quartz crystal resonator. The sputtered fluxes of all film components originate from the same spatial location, ensuring homogeneous film composition. The results presented demonstrate for the first time an automated ion beam sputter deposition system with the capability of producing high Tc superconducting films by controlled sputtering of either elemental metallic components or oxide precursors. The concept may be extended to include processes such as patterning, production of layered structures (junctions), and film encapsulation necessary for microcircuit manufacturing based on high Tc superconducting films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101568
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  • 2
    Electronic Resource
    Electronic Resource
    Second harmonic generation in potassium niobate thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 435-438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Green light produced by second harmonic generation has been observed in an epitaxial orthorhombic KNbO3 thin film planar waveguide produced by ion-beam sputter deposition on a (100)-oriented MgO single crystal substrate. A Nd:YLF laser beam, with a wavelength of 1.053 μm and ∼80 ps, 100 MHz pulses under mode-locked operation, was coupled into the waveguide using a rutile prism, and a green light streak 3–4 mm long was seen in the guide. The TM0 mode of the input beam was phase matched to the TE1 mode of the second harmonic for a film thickness of 2300 A(ring). Second harmonic generation was also observed in a nonwaveguided configuration on thicker (4600–6500 A(ring)) films on both MgO and KTaO3 substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360622
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  • 3
    Electronic Resource
    Electronic Resource
    Synthesis and characterization of Pb (ZrxTi1−x)O3 thin films produced by an automated laser ablation deposition technique (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5197-5207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric lead zirconium titanate [Pb (ZrxTi1−x)O3] (PZT) thin films have been synthesized by using an automated laser ablation deposition technique with a capability for layer-by-layer or simultaneous deposition of elemental film constituents. The technique is suitable for producing multicomponent and/or multilayered thin films with controlled stoichiometry, such as high-temperature superconductor, ferroelectric, and electro-optic thin films. PZT films were synthesized on MgO (100) by either sequential deposition of layers of ZrO2, TiO2, and PbO, produced by laser ablation of ZrO2, TiO2, and PbO targets, or by simultaneous deposition of all species from ablation of stoichiometric or PbO-rich PZT targets. Films were deposited at 200 °C and subsequently annealed at 600 °C for different periods of time. The orientation, microstructure, surface topography, and composition of the films were characterized by x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and Rutherford backscattering spectrometry, respectively. As-deposited layer films consists of highly oriented (001) PbO layers, from which highly oriented (110) PZT films are produced after postdeposition annealing. On the other hand, laser ablation of bulk PZT targets yields amorphous as-deposited films, which evolve into highly oriented (100) PZT films after postdeposition annealing. Preliminary electrical characterization of the PZT films included polarization hysteresis, fatigue, conductivity (ac and dc), and capacitance versus voltage measurements. From the initial electrical measurements, it appears that the remnant polarization of the layered PZT films is similar to that of the films produced by laser ablation of bulk PZT targets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353746
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical properties of ferroelectric thin-film capacitors with hybrid (Pt,RuO2) electrodes for nonvolatile memory applications (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2146-2154 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For Pb(ZrxTi1−x)O3 (PZT) thin-film capacitors to be used in ferroelectric nonvolatile memories, they must have low polarization fatigue and low leakage currents. PZT capacitors fabricated in our laboratory with RuO2 electrodes exhibit excellent polarization fatigue characteristics, but they have large and variable leakage currents (typically 10−3–10−4 A/cm2 at 1 V). On the other hand, PZT capacitors with Pt electrodes have low leakage currents (typically 〈10−9 A/cm2 at 1 V), but they undergo severe polarization fatigue. New (Pt,RuO2) hybrid electrodes which result in PZT capacitors that combine the excellent fatigue behavior of RuO2/PZT/RuO2 with the low leakage currents of Pt/PZT/Pt capacitors have been developed. The hybrid electrodes studied are of two main types: one type consisted of Pt/RuO2 or RuO2/Pt double layers, while the other consisted of a codeposited Pt–RuO2 layer. All capacitors discussed here had an RuO2/PZT/hybrid electrode/MgO heterostructure. It will be shown that capacitors with negligible fatigue (up to 1011 switching cycles) and with leakage currents that are two to four orders of magnitude lower than those of RuO2/PZT/RuO2 capacitors can be achieved. In addition, the capacitors with hybrid electrodes have very small retention loss. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359572
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of the ablated flux characteristics during pulsed laser ablation deposition of multicomponent oxides (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7497-7505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ablated flux characteristics of PbZr0.52Ti0.48O3 (PZT), La0.5Sr0.5CoO3 (LSC), and MgO ceramic targets have been studied as functions of the ablation time, the ablation energy, and the chamber gas pressure. The time dependence of the ablation rate shows an initial exponential decay, reaching a steady-state value at longer times. The energy dependence of the ablation rate (in vacuum) reveals a distinct ablation threshold energy for MgO ablation, while for PZT and LSC no ablation threshold is evident. The differences in the ablation characteristics of these materials are explained mainly by differences in their melting points, thermal conductivities, and absorption coefficients. Upon adding O2 gas, a visual change in the color and shape of the PZT ablation plume is evident. The color change indicates a gas phase reaction of the ablated species with the O2 gas, while the shape change implies a change in the angular distribution of the ablated species. We have measured a narrowing of the ablated flux distribution from a PZT target as O2 is added, from a cos40 θ distribution in a low pressure, up to a cos260 θ distribution in an O2 pressure of 300 mTorr. This narrowing, or focusing, of the ablation plume is observed with high laser energies and high pressures of O2 or noble gases. At low laser power, the deposition rate decreases and the plume broadens as the gas pressure is increased. The plume narrowing and plume broadening regimes are both controlled by gas scattering effects. The angular distribution of depositing species, and the ratio of deposition flux to O2 flux, are very different in each of these regimes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354974
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  • 6
    Electronic Resource
    Electronic Resource
    CO2 laser patterning of plasma-deposited high Tc superconducting thick films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1392-1396 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent advances in the development of high Tc superconducting thick films have lead the present work to optimize laser etching parameters for patterning thick films for device fabrication. Plasma-deposited superconducting thick films (200–400 μm) of Y-Ba-Cu-oxide materials on polycrystalline alumina and copper substrates were laser etched using a CO2 laser (10.6 μm) in the enhanced pulse mode. Significant spatial nonuniformity of the surface elemental distribution of Y, Ba, Cu, and Al was observed in the underlying laser-etched area. The laser fluence for threshold etching was observed to be 25 J/cm2. An etch rate of 4.0 μm/scan was calculated at an optimized laser fluence of 292 J/cm2 for patterning plasma-sprayed thick films having an estimated heat affected zone of 15 μm. An absorption length of 52 μm for the CO2 laser was determined to be suitable for patterning thick films for device fabrication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344442
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  • 7
    Electronic Resource
    Electronic Resource
    Uniform deposition of YBa2Cu3O7−δ films over large areas using ion-beam sputtering (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6952-6957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniform films of YBaCuO have been deposited over 4-in.- (100-mm) diam, unheated Si wafers using ion-beam sputtering of a stoichiometric YBa2Cu3O7−δ target. Rutherford backscattering spectrometry reveals that within a 3-in. diam, the thickness variation is ±2.9%, and the compositional uniformity of Y, Ba, and Cu is ±0.9%, ±5.2%, and ±3.4%, respectively. The average film composition is Y1.03Ba1.88Cu3.09O7−δ. Deposition onto unheated substrates virtually eliminates the problem of the low sticking coefficients of Ba and Cu, and is much simpler for film synthesis and processing. The observed difference from the 1:2:3 target composition is attributed mainly to angular differences in the sputtered-flux distribution of each element. These effects should be minimized by substrate rotation. In order to obtain useful superconducting films, a post-deposition anneal on a suitable substrate or buffer layer is required. Using a relatively low temperature (∼810 °C), low O2 pressure (1.2 Torr) post-anneal, we show that oriented, superconducting films can be obtained on single-crystal MgO and SrTiO3 substrates. Films annealed under these conditions on MgO are predominantly c-axis oriented, whereas those on SrTiO3 are predominantly a-axis oriented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349822
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  • 8
    Electronic Resource
    Electronic Resource
    High temperature stability in lanthanum and zirconia-based gate dielectrics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3476-3482 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gate dielectrics composed primarily of lanthana and zirconia were prepared by reactive evaporation. The stability of the layers during high temperature anneals was investigated. By controlling the oxygen partial pressure during heat treatment, lanthana and zirconia films could be protected against reaction with the underlying Si substrate and against the growth of low-cursive-epsilon interface layers. The electrical thickness of the dielectrics could be maintained after a 900 °C exposure. The critical oxygen pressure at 900 °C for low-cursive-epsilon interface formation beneath ZrO2 and La2O3 dielectrics was ∼2e−4 Torr. The interfaces that formed beneath the ZrO2 and La2O3 layers are distinctly different. The sub-ZrO2 interface, influenced primarily by phase separation, tends towards pure SiO2, while the sub-La2O3 interface, influenced primarily by silicate formation, tends towards a La–Si–O alloy. For both materials, reducing the oxygen pressure to values below 10−7 Torr resulted in rapid degradation of the metal oxide. This dielectric degradation is believed to be linked to SiO evaporation. These results suggest that at high temperatures, a window of optimal oxygen partial pressure exists in which the stability of many oxides in contact with silicon can be achieved. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391418
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature and thickness dependent permittivity of (Ba,Sr)TiO3 thin films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 340-342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature and thickness dependence of permittivity of (Ba,Sr)TiO3 has been investigated. The films were deposited by liquid-source metalorganic chemical vapor deposition onto Pt/SiO2/Si, with thicknesses ranging from 15 to 580 nm. The dielectric response was measured from 100 to 520 K. As film thickness decreased, the maximum dielectric constant decreased, the temperature at which the maximum dielectric constant occurred decreased, and the peak in the dielectric constant became more diffuse. A model incorporating a thickness independent interior and a nonferroelectric surface cannot account for these thickness dependencies. To appropriately model these observations a physical model containing thickness and temperature dependent interior and surface components is necessary. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490148
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 496-498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of SrBi2Ta2O9 (SBT) films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films grown on stable Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibit high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films synthesized on Pt/Ti/SiO2/Si. It is shown that severe diffusion of Ti from the Ti interlayer onto the surface of the Pt bottom electrode and the increased surface roughness of this electrode stack play key roles in degradation of SBT properties. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125799
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