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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2390-2392 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of an in situ SiN treatment of sapphire substrates on the optical properties of GaN films grown by metalorganic chemical vapor deposition. The SiN deposition, partially covering the substrate, forms a mask for the formation of nanoscale auto-organized GaN islands. These islands formed upon an increase of the temperature after deposition of a GaN buffer layer on this mask. A photoluminescence study of the GaN epilayers obtained by lateral overgrowth of these islands shows significant enhancement of the luminescence emission intensity of the near band edge peaks and a reduction of the full width at half maximum of the donor bound exciton (D0X) peak by 32% down to 4 meV compared to in our standard process. The GaN films grown using SiN treatment are highly stressed as evidenced by a blueshift of 10 meV in the D0X peak energies. Photoelectrochemical etching in aqueous solution of KOH was applied to reveal the dislocation density. The density of "whisker-like" etch features, which form due to the presence of dislocations, was reduced from 6×109 cm−2 in standard GaN films to 8×108 cm−2 in the GaN layers grown with the optimized SiN treatment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4109-4111 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of low-temperature photoluminescence (PL) spectra with the thickness of the layer (3–400 μm) is investigated on high-quality GaN grown by hydride vapor-phase epitaxy. With increasing layer thickness, three acceptor bound exciton peaks are found to reduce in intensity, although the impurity concentrations, measured by secondary ion mass spectrometry, do not depend on the sample thickness. The observed acceptor transitions are attributed to intrinsic defects, originating from the substrate/layer interface and decreasing in density with the thickness of the layer. The optical properties, studied by reflectance, temperature and excitation power dependent PL, are compared to those of homoepitaxial GaN films grown by metalorganic chemical vapor deposition. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2355-2357 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoluminescence (PL) study of GaN homoepitaxial layers grown by metal–organic chemical-vapor deposition demonstrates the high optical quality of N-face layers deposited on vicinal (0001¯) GaN substrates. In contrast to broad PL emission in exact (0001¯) layers, narrow-bound (0.9 meV) and free- (A and B) excitonic transitions are observed. By following the PL spectra as a function of temperature and excitation power, the main optical transitions in the Ga- and the misoriented N-face layers are found to be the same. Observed differences are related to the distinct creation of donor and acceptor states in the samples of different polarities. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2306-2308 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New possibilities for magnetic domain studies are demonstrated using a combination of nonlinear magneto-optical microscopy and a conventional linear polarizing microscope. The use of an optical response that is governed by a higher rank tensor offers sensitivity to additional combinations of magnetization directions and optical wave vector and polarization, which is demonstrated in magnetic garnet films of different crystallographic orientations. We observed a nontrivial modulated domain structure in a (210) film and a clear domain contrast for a (111) film, where the linear image only indicated simple up–down domains and no domain contrast for these two situations, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5014-5014 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization induced second harmonic generation (MSHG) is a novel magneto-optical technique that has an enhanced surface/interface sensitivity and demonstrates very large magneto-optical effects.1 It is described by a generalized nonlinear optical tensor χ(2) which has different transformation properties as compared to the linear tensor χ(1). As a consequence, in the same geometry MSHG may be sensitive to other magnetization components than linear magneto-optics. Therefore linear and nonlinear magneto-optics should work best in a combination. Here we report the development of a magneto-optical microscope that is sensitive simultaneously to the linear (Faraday or Kerr) and nonlinear (MSHG) magneto-optical effects. MSHG, on the one hand, is able to visualize some exotic domain structures, e.g., 180° domains in antiferromagnetics and ferroelectrics. On the other hand, because of its interface sensitivity it might help to visualize the magnetic structure at the interface between two different magnetic materials (including metals). Last but not least, the microscope evidently has an enhanced resolution due to the frequency doubling of detected light. First, we apply the microscope to the study of domains in magnetic garnet films, where a considerable difference between Faraday and MSHG images in the same configuration is demonstrated. A complicated noncollinear domain structure is straightforwardly derived from the MSHG images. Next, we consider the application of our technique to the magnetic metal surfaces and thin films (in reflection). The utilization of the microscope to correlate the surface/interface morphology with its magnetic properties is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Cybernetics and systems analysis 27 (1991), S. 870-877 
    ISSN: 1573-8337
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Notes: Abstract A new tangential cone for the graph of a set-valued mapping is defined. Local solvability and Buligan-differentiability of the set-valued mapping are considered. An upper convex approximation for the marginal function is derived. The new cone is compared with known tangential cones.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    International applied mechanics 19 (1983), S. 743-748 
    ISSN: 1573-8582
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    International applied mechanics 29 (1993), S. 989-993 
    ISSN: 1573-8582
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    International applied mechanics 31 (1995), S. 1004-1011 
    ISSN: 1573-8582
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    International applied mechanics 28 (1992), S. 303-306 
    ISSN: 1573-8582
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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