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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of electron trap states due to InAs quantum dots in GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2916-2918 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs quantum dots grown in a GaAs matrix are investigated using capacitive transient spectroscopy and transmission electron microscopy (TEM). Two deep levels are detected which are energetically too deep to be the intrinsic electron levels of the quantum dots. Both TEM as well as the detailed non-exponential behavior of the electron capture indicate that the traps do not result from dislocations in the GaAs matrix. We propose that the measured trap levels are due to point defects in or near the quantum dots. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126516
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  • 2
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy investigation of structural properties of self-assembled CdSe/ZnSe quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1329-1331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdSe quantum dots on ZnSe, grown by molecular beam epitaxy and formed during reorganization of an initially uniform film by thermal activation, are microstructurally elucidated in cross section and plan view, using transmission electron microscopy. In diffraction contrast, an almost uniform wetting layer is clearly visible. Dark contrast features with a distinctly larger extension into growth direction mark the location of quantum dots. Individual quantum dots can be identified in high-resolution imaging both by lattice expansion and contrasts arising from their strain fields. Plan-view images show the coexistence of two classes of quantum dots with an average lateral size of ≤10 nm (area density 100 μm−2) and 10–50 nm (20 μm−2), respectively. The shape of the larger entities is pyramidlike. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120984
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    High-resolution analytical transmission electron microscopy of semiconductor quantum structures (1999)
    Springer
    Fresenius' journal of analytical chemistry 365 (1999), S. 217-220 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Analytical transmission electron microscopy was applied to characterize the size, shape, real structure, and, in particular, the composition of different semiconductor quantum structures. Its potential applicability is demonstrated for heterostructures of III-V semiconducting materials and II-VI ones, viz. (In,Ga)As quantum wires on InP and (In,Ga)As quantum dots on GaAs both grown by metal organic chemical vapor deposition, and CdSe quantum dots on ZnSe grown by molecular beam epitaxy. The investigations carried out show that the element distribution even of some atomic layers can be detected by energy-dispersive X-ray spectroscopy, however, exhibiting a smeared profile. Contrary to that, sub-nanometre resolution has been achieved by using energy-filtered transmission electron microscopy to image quantum dot structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160051476
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    Paper (German National Licenses)
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