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  • 1
    Electronic Resource
    Electronic Resource
    Effect of Li diffusion on the domain inversion of LiNbO3 prepared by vapor transport equilibration (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 700-702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: LiNbO3 crystals with a composition close to stoichiometry were prepared by using a vapor transport equilibration (VTE) technique. The influence of the intrinsic defect density in the electric field periodic poling LiNbO3 crystal is studied. The switching field is found to decrease with the intrinsic defects. The reduction of intrinsic defects is mainly due to a change in the Li/Nb ratio in the LiNbO3 crystal, as a result of lithium diffusion during the VTE process. The switching field of ∼2 kV/mm in stoichiometric LiNbO3 is about one fourth of the previously published results obtained with near-stoichiometric crystals, and is approximately one tenth of the conventional congruent field. Periodic poling of thicker stoichiometric substrates was successfully performed by means of an electric field poling process at room temperature. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494852
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  • 2
    Electronic Resource
    Electronic Resource
    Reduction of laser-induced dark traces in LiNbO3:Mg and LiNbO3:Zn by heat treatment (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9334-9337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dark traces induced by high-power laser radiation in LiNbO3:Mg and LiNbO3:Zn are found to be reduced by annealing the crystals in an O2 atmosphere. Most of the decrease of the second-harmonic generation efficiency η for 1064–532 nm conversion due to dark traces can be recovered in heat-treated crystals. The transmission loss spectra ΔT(λ) of dark traces show a complex absorption band ranging from 365 nm to near infrared, which can be decomposed into three main peaks at 3.1, 2.5, and 1.6 eV. Maximum transmission loss due to dark traces after 1200 shots with an input power density of 18 MW/cm2 is 17% and 25% for as-grown LiNbO3:Zn and LiNbO3:Mg crystals respectively, and it is reduced to 4.6% and 3.8% respectively for heat-treated crystals. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362610
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  • 3
    Electronic Resource
    Electronic Resource
    Ilmenite-like stacking defect in nonstoichiometric lithium niobate crystals investigated by Raman scattering spectra (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4410-4414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Raman spectra of three pure lithium niobate (LiNbO3) crystals with different content of Li and several doped LiNbO3 (Mg, In and Ti) crystals have been investigated. A weak peak at about 738 cm−1 reported as a very strong Raman peak of ilmenite phase LiNbO3 was observed for nonstoichiometric LiNbO3 crystals. The dependence of this peak on Li content and doping concentration in crystal suggested that there is a new kind of defect structure which has ilmenite-like stacking and direct relationship with antisite NbLi4+ ion. This result experimentally proved the existence of ilmenite-like stacking defect in nonstoichiometric LiNbO3 for the first time. This defect is in good agreement with the Li vacancy model and has a different structure from that proposed by Smyth [Ferroelectrics 50, 93 (1983); Proc. IEEE, p. 115 (1986)]. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373085
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  • 4
    Electronic Resource
    Electronic Resource
    New doped lithium niobate crystal with high resistance to photorefraction—LiNbO3:In (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 280-281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly indium-doped lithium niobate crystals have been grown. It was found that a LiNbO3:In (5 mol %) crystal had a similar high resistance to photorefraction as a LiNbO3:Zn (7.5 mol %) crystal. The result of x-ray fluorescence showed that the doped concentration of In in LiNbO3:In (5 mol % in the melt) exceeds the concentration threshold of trivalant elements (3.0 mol % in the crystal). The LiNbO3:In (5 mol %) crystal is another doped LiNbO3 crystal with high resistance to light-induced refractive index damage. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113517
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