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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1850-1852 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of avalanche breakdown is investigated for uniform and microplasma-related breakdown in epitaxial 4H SiC p-n junctions. P-n mesa diodes fabricated with positive angle beveling and oxide passivation can withstand temperatures of up to 300–400 °C in the breakdown regime. Uniform avalanche breakdown in 4H silicon carbide appears to have a positive temperature coefficient, in contrast to the 6H polytype, where the temperature coefficient is negative. The influence of deep levels on avalanche breakdown in epitaxial diodes is of minor importance for uniform breakdown, but appears to be significant for breakdown through microplasmas. A negative temperature coefficient for the avalanche breakdown voltage can be observed even for 4H SiC if the breakdown is dominated by microplasmas. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122303
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  • 2
    Electronic Resource
    Electronic Resource
    Implantation-induced dopant diffusion in the framework of the droplet model of structural disorder (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 356-358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the annealing of implantation-induced structural disorder is proposed. The phenomenon is treated on the basis of a physical analogy between point defect cluster formation/dissolution in a crystal and droplet condensation/evaporation in a saturated vapor. Explicit relationships are obtained for diffusion broadening and drift of the dopant profile upon disorder annealing. The predictions of the droplet model are compared with experimental data on boron in silicon and are found to be accurate better than within a factor of 2 in the temperature range 800–1050 °C. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114627
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  • 3
    Electronic Resource
    Electronic Resource
    Electron effective masses and mobilities in high-purity 6H–SiC chemical vapor deposition layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3209-3211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first observation of cyclotron resonance in 6H-SiC by optically detected cyclotron resonance (ODCR) spectroscopy at X-band microwave frequency is reported. High purity undoped, n-type 6H-SiC layers grown by chemical vapor deposition (CVD), with residual doping concentrations in the 1014–1015 cm−3 range, were investigated. Effective mass values were determined as m*⊥=(0.42±0.02)m0 and m*(parallel)=(2.0±0.2)m0. From the fit of the ODCR line shape, a remarkably high mobility at 6 K was deduced: μ⊥≈1.1×105 cm2/V s for electrons in the basal plane. The anisotropy of the effective mass and the carrier mobility is discussed in comparison with previously reported data. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112956
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of microwave fields on recombination processes in 4H and 6H SiC (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1929-1932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of microwave fields on recombination processes, which are responsible for the optical detection of cyclotron resonance (ODCR) in 4H and 6H SiC epitaxial layers, have been investigated. We present experimental evidence indicating that the dominant mechanism of ODCR in SiC, at low temperatures and in a common range of microwave power (〈200 mW), is microwave-induced lattice heating under the cyclotron resonance conditions. The results also show that at low temperatures and low microwave power the dominant scattering mechanism is impurity scattering, while carrier scattering by lattice phonons dominates under high microwave power conditions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364048
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of vapor composition on polytype homogeneity of epitaxial silicon carbide (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5704-5712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicon to carbon precursor ratio is demonstrated as strongly affecting the spontaneous nucleation of cubic SiC upon the growth of epitaxial layers of 4H and 6H silicon carbide using the chemical vapor deposition (CVD) technique. High C/Si ratios appear to promote the nucleation of cubic SiC. A model of CVD process chemistry that relates the effect to a decrease of SiC surface mobility with an increase of the C/Si ratio is proposed. The resulting increase of supersaturation at the surface terraces promotes the spontaneous nucleation of cubic SiC. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363622
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  • 6
    Electronic Resource
    Electronic Resource
    Bright-line defect formation in silicon carbide injection diodes (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3700-3702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Irreversible formation of a network of linear defects has been observed for images showing recombination luminescence from injection diodes in hexagonal silicon carbide. The defects are related to dislocations that are initially formed as a result of thermal stress near the tip of the contact probe and subsequently propagate through the diode area. The dislocation network appears in the images of the electroluminescence as bright-line defects, in contrast to the well-known dark-line defects due to degradation of gallium–arsenide-based light-emitting devices. Higher forward currents are found to promote the dislocation growth. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120486
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical properties and formation mechanism of porous silicon carbide (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2699-2701 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variation of the preparation conditions of porous silicon carbide is shown to have a strong effect on the structural and electrical properties of the material obtained. A correlation has been observed between the fiber size and resistivity of porous SiC, a decrease of fiber size results in a semi-insulating material due to Fermi-level pinning to surface states. A model is proposed for the mechanism of fiber size self-regulation responsible for the porous material formation. The model relates the blocking of the fiber dissolution process to the increase of resistivity in a thin fiber due to Fermi-level pinning. We suggest that the Fermi-level pinning model is also applicable to the formation mechanism of porous silicon. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112610
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  • 8
    Electronic Resource
    Electronic Resource
    Ionization rates and critical fields in 4H silicon carbide (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 90-92 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial p-n diodes in 4H SiC are fabricated showing a good uniformity of avalanche multiplication and breakdown. Peripheral breakdown is overcome using the positive angle beveling technique. Photomultiplication measurements were performed to determine electron and hole ionization rates. For the electric field parallel to the c-axis impact ionization is strongly dominated by holes. A hole to electron ionization coefficient ratio of up to 50 is observed. It is attributed to the discontinuity of the conduction band of 4H SiC for the direction along the c axis. Theoretical values of critical fields and breakdown voltages in 4H SiC are calculated using the ionization rates obtained. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119478
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  • 9
    Electronic Resource
    Electronic Resource
    Electron effective masses in 4H SiC (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1074-1076 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results from optically detected cyclotron resonance (ODCR) studies of electron effective masses in 4H SiC are reported. ODCR measurements were performed on high-purity n-type 4H SiC epitaxial layers grown by chemical vapor deposition at both X band (9.23 GHz) and Q band (35.05 GHz) microwave frequencies. Electron effective masses in 4H SiC were directly determined as m⊥*=0.42m0 and m(parallel)*=0.29m0. A scattering time in the basal plane τ⊥≈4.3×10−11 s, and hence, the corresponding electron mobility μ⊥≈1.8×105 cm2/V s, was obtained from a fit of the ODCR line shape. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113576
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of porous silicon carbide (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2250-2252 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed investigation of the dependence of the photoluminescence from porous silicon carbide on preparation conditions and starting material is presented. Porous silicon carbide prepared from different polytypes shows almost identical emission spectra, demonstrating a clear impedance of the band-gap energy of a particular SiC polytype. Emission bands with peak energies of 2.43, 2.22, 2.07, and 1.93 eV were resolved with the use of selective excitation by tuning the excitation wavelength. The origin of luminescence is suggested to relate to defect states produced at the etched surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113182
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