ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Programmable metallization cell (PMC) memory is based on the electrochemical control ofnanoscale quantities of metal in thin films of solid electrolyte. We investigate the nature of thin filmsformed by the photo-dissolution of Ag into Ge-Se-Te glasses for use in programmable metallizationcell devices. Glassy alloys of a-Ge25Se75-xTex(x = 0, 25) are prepared by well known melt-quenchingtechnique. Thin films of a-Ge25Se75-xTex(x = 0, 25) glassy alloys are evaporated by vacuumevaporation technique at ~10-6 torr on glass substrate at room temperature. Optical properties in thisstudy concerns photo-diffusion of Ag on Ag-doped Ge-Se-Te electrolytes. With these promisingproperties, the composition a-Ge25Se75-xTex(x = 0, 25) is recommended as a potential candidate forPMC-RAM
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.31.135.pdf
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