ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Deep-level centers in GaAs-based p-n junctions, which were fabricated by a liquid phase epitaxy in hydrogen or argon ambients, were investigated. The minority charge carrier lifetime for p-layers grown in hydrogen is an order of magnitude larger than that for p-layers grown in argon. It is demonstrated that disimilar deep-level centers are formed in different gas media. Two types of deep-level centers, which act as hole traps, are found in the samples grown in hydrogen. The Arrhenius dependences for these centers are close to known dependences for HL2 and HL5 centers, suggesting that the centers observed can be identified as HL2 and HL5 centers. One type of deep-level center, which is a hole trap, is found in the samples grown in argon. This center is identified as arsenic in the gallium sublattice.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188024
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