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  • 1
    Electronic Resource
    Electronic Resource
    Passivation of InP for Optoelectronics (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 185-188 (Mar. 1995), p. 199-208 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.185-188.199.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Defect-induced redistribution of Fe- or Ti-implanted and annealed GaAs, InAs, GaP, and InP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3514-3521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural properties of GaAs, InAs, GaP, and InP implanted by Fe or Ti at 150 keV/400 keV and doses of 1012–1×1015 cm−2 and the depth distribution of the implants are comparatively studied before and after annealing with and without a Si3N4 cap. Results of Rutherford backscattering, x-ray double-crystal diffractometry, and secondary-ion mass spectroscopy experiments are presented. Fe redistributes strongly in all materials upon annealing, Ti does not redistribute at all. The driving force of redistribution of Fe is not classical diffusion but reaction with implantation-induced defects and stoichiometric imbalances. The actual defect chemistry of the as-implanted arsenides is found to be fundamentally different from the as-implanted phosphides since in the latter case the mass ratio of the constituents is much larger and the specific energy for amorphization is much lower. Consequently, redistribution of Fe in the phosphides and the arsenides differs qualitatively from each other.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351429
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  • 3
    Electronic Resource
    Electronic Resource
    Redistribution of Fe and Ti implanted into InP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2604-2609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of Fe and Ti implanted into InP and its recrystallization is studied using 〈m1;37.6p〉various thermal annealing techniques. Fe and Ti profiles are measured by secondary-ion mass spectroscopy and recrystallization by Rutherford backscattering channeling. Ti shows absolutely superior thermal stability under any circumstances as compared to Fe. Iron always accumulates at the surface and at a depth of approximately twice the projected range Rp. After high-dose implantation Fe additionally accumulates in the 0.8Rp region. At similar doses Ti still shows no diffusion and only faint accumulation between the surface and Rp.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349370
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  • 4
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3910-3914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase formation in rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As has been investigated by means of cross-sectional transmission electron microscopy, convergent-beam electron diffraction, and energy-dispersive x-ray analysis. Solid-phase regrowth is observed to occur similarly as in Pd/Ge contacts on GaAs or InP. The reaction starts at low temperatures with the formation of an amorphous Pd–In–Ga–As layer, which crystallizes at elevated temperatures yielding hexagonal Pd4In0.53Ga0.47As being first described in this work. At temperatures (approximately-greater-than)250 °C, this phase decomposes due to epitaxial solid-phase regrowth of In0.53Ga0.47As and formation of Pd–Ge phases. The stable composition is reached at temperatures (approximately-greater-than)350 °C with excess Ge diffused through top Pd–Ge to the contact interface and growing epitaxially on the semiconductor. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363348
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  • 5
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectroscopy study of Zn or Cd implanted and rapid thermally annealed Pd/Ge contacts to p-In0.53Ga0.47As (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1174-1176 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Backside secondary ion mass spectroscopy is used to examine elemental redistribution in Zn or Cd implanted Pd/Ge contacts to p-InGaAs. A quaternary Pd-In-Ga-As layer is observed at annealing temperatures of 200–250 °C. At temperatures (approximately-greater-than)250 °C, this layer disappears due to PdGe formation and InGaAs regrowth. Excess Ge diffuses to the contact interface. Cd and Zn accumulate inside the regrown InGaAs creating a thin, highly doped layer. Due to its abrupt interface and the formation of a highly doped layer beneath the contact, this implanted Pd/Ge contact scheme is a promising candidate for shallow ohmic contacts to p-InGaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112137
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  • 6
    Electronic Resource
    Electronic Resource
    Laser-induced doping of GaAs (1985)
    Springer
    Applied physics 38 (1985), S. 49-56 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin layers of GaAs are heavily doped locally by laser induced Se or Zn diffusion. H2Se or diethylzinc gases are used to provide Se or Zn dopant atoms. The surface is locally heated with 3 ns light pulses from a Q-switched frequency doubled Nd-YAG laser. The doping process is described in detail. Doping profiles and sheet carrier concentrations are measured as a function of substrate temperature, laser fluence and processing time. Dopant concentrations of more than 1021 cm−3, with a thickness of the doped layer of less than 20 nm can be achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618726
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