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  • 1
    Electronic Resource
    Electronic Resource
    Molecular ion implantation in silicon (1997)
    Springer
    Microchimica acta 125 (1997), S. 313-316 
    Details
    ISSN: 1436-5073
    Keywords: molecular ion implantation ; silicon nitride layers ; resonant nuclear reaction analysis ; non-Rutherford RBS ; nitrogen depth profile
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract 15N2 + molecular ions were implanted with 10keV (j=10 μA/cm2) under high vacuum conditions close to room temperature in 〈100〉 silicon (c-Si) to study the13N depth distributions, particularly the dependence of peak concentration and dose on the ion fluence. The analysis were performed by the resonant nuclear reaction15N(p, αγ)12C(NRA). A maximum peak concentration of 65 at.% was measured. Thin stoichiometric silicon nitride layers with a thickness of approx. 20 nm (15 at.% nitrogen at the specimen surface) were produced by this low-energy implantation of15N2 + ions with an ion fluence of 1.5·1017 ions/cm2. NRA analysis of 38 keV15N2 + and 19keV15N+ ion implantations were performed to compare the15N depth distributions. No significant changes in the depth distributions are measured, that means, the molecular15N2 + ions are already disintegrated passing the very first atomic layers of the sample during implantation. Non-Rutherford RBS with4He+ ions and 3.45 MeV was performed in order to confirm the results obtained by NRA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01246204
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  • 2
    Electronic Resource
    Electronic Resource
    Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation (1997)
    Springer
    Microchimica acta 125 (1997), S. 337-341 
    Details
    ISSN: 1436-5073
    Keywords: ion implantation ; silicon nitride layers ; TEM analysis ; resonant nuclear reaction analysis ; nitrogen depth profile
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Thin silicon nitride (SiN x ) layers with the stoichiometric N/Si ratio of 1.33 in the maximum of the concentration depth distributions of nitrogen were produced by implanting 10 keV15N 2 + in 〈100〉 silicon at room temperature under high vacuum conditions. The depth distribution of the implanted isotope was measured by resonance nuclear reaction analysis (NRA), whereas the layer structure of the implanted region and the geometrical thickness of the layers were characterised by high resolution transmission electron microscopy (TEM). SiN x layers with a thickness of about 30 nm were determined by NRA. Channeling Rutherford backscattering spectrometry was used to determine the disorder in the silicon substrate. Sharp interfaces of a few nanometers between the highly disordered implanted region and the crystalline structure of the substrate thickness were observed by TEM. The high thermal stability of SiN x layers with N/Si ratios from under to over stoichiometric could be shown by electron beam rapid thermal annealing (1100 °C for 15 s, ramping up and down 5 °C/s) and NRA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01246208
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    The European Materials Research Society (E-MRS) (1989)
    Weinheim : Wiley-Blackwell
    Advanced Materials 1 (1989), S. 216-217 
    Details
    ISSN: 0935-9648
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/adma.19890010702
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  • 4
    Electronic Resource
    Electronic Resource
    The European Materials Research Society (E-MRS) (1989)
    Weinheim : Wiley-Blackwell
    Zeitschrift für die chemische Industrie 101 (1989), S. 962-963 
    Details
    ISSN: 0044-8249
    Keywords: Chemistry ; General Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/ange.19891010734
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  • 5
    Electronic Resource
    Electronic Resource
    The European Materials Research Society (E-MRS) (1989)
    Weinheim : Wiley-Blackwell
    Angewandte Chemie International Edition in English 28 (1989), S. 938-939 
    Details
    ISSN: 0570-0833
    Keywords: Chemistry ; General Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/anie.198909381
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    Paper (German National Licenses)
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