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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 264-268 (Feb. 1998), p. 1145-1148 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.264-268.1145.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    InP on Si(111): Accommodation of lattice mismatch and structural properties (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 769-771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of InP by low-pressure metalorganic chemical vapor deposition on vicinal Si(111), misoriented 3° towards [1¯1¯2], is reported. By double crystal x-ray diffraction an order of magnitude improvement in structural quality is measured as compared to InP on Si(001). From high resolution electron microscopy near the interface a heavily twinned region of 25 nm in thickness is found with microtwins having their twin planes parallel to the Si(111) surface. In this region the 8% misfit between InP and Si is completely accommodated in one dimension by partial dislocations having Burgers vectors a/6〈112〉 (Schockley partial dislocations) in the (111) surface plane which are associated with the formation of the thin twinned region close to the interface. Above this zone the crystallographic orientations of the InP are identical to those of the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111007
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  • 3
    Electronic Resource
    Electronic Resource
    Strain distribution in InP/InGaAs superlattice structure determined by high resolution x-ray diffraction (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 469-471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial strain distribution in a short period InP/InGaAs superlattice structure is evaluated by means of high resolution x-ray diffraction. The diffraction pattern of the structure allows an unambiguous determination of interfacial strain distribution. From the numerical calculation, positively strained interfacial monolayers at the InP→InGaAs and negatively strained interfacial monolayers at the InGaAs→InP interfaces had to be introduced in order to reproduce the experimental data. At the InP→InGaAs interfaces a group V exchange reaction leading to a positively strained InAs or InAs1−xP interfacial layer is compatible with the simulation. At the InGaAs→InP interfaces negatively strained ternary or quaternary InGaAsyP1−y meet these requirements. The results are consistent with low temperature calorimetric absorption measurements which exhibit a wide band gap InGaAsP-like absorption feature at 1.48 eV beyond the InP energy gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111132
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  • 4
    Electronic Resource
    Electronic Resource
    Fe and Ti doping of InP grown by metalorganic chemical-vapor deposition for the fabrication of thermally stable high-resistivity layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3870-3881 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optimum conditions for the fabrication of semi-insulating InP epitaxial layers grown by metalorganic chemical-vapor deposition are investigated in a comparative study of the structural, electrical, and diffusive properties of Fe- and Ti-doped material. Thermally stable InP:Fe layers with resistivities approaching the intrinsic limit can be prepared in an environment of n-type material if the Fe concentration does not exceed but is close to its solubility limit of 8×1016 cm−3 at 640 °C. In contact with p-type layers, however, semi-insulating characteristics of InP:Fe turn out to be difficult to reproduce because of a pronounced interdiffusion of Fe and p-type dopants. Here, Ti doping of InP is shown to be a useful scheme for the fabrication of high-resistivity layers. New processes for the deposition of InP:Ti using (C5H5)2Ti(CO)2 and Ti[N(CH3)2]4 as metalorganic precursors are described in detail. Ti is found to compensate up to 2×1016 cm−3 of shallow acceptors in metalorganic chemical-vapor-phase-deposition-grown InP. Ti-doped InP layers containing more electrically active deep Ti donors than net shallow acceptors exhibit semi-insulating characteristics with a resistivity of 5×106 Ω cm. Codoping of InP:Fe with Ti turns out to be a universal process for the preparation of thermally stable high-resistivity layers. If the material is appropriately grown, Fe+Ti doping compensates both excess shallow donors and excess shallow acceptors up to concentrations of 8×1016 and 2×1016 cm−3, respectively. In contrast to InP:Fe, resistivities in excess of 107 Ω cm are obtained in contact with both symmetric n- and p-type current injecting contacts. Moreover, codoping of semi-insulating InP:Fe with Ti is found to suppress the interdiffusion of Fe and p-type dopants. Therefore, the outdiffusion and accumulation of Fe in other regions of complex device structures can be significantly reduced. The interdiffusion of Fe and p-type dopants as well as its suppression by additional doping with Ti, finally, is studied in detail, which enables a comprehensive model accounting for this phenomenon to be developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356067
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical characterization of magnesium implanted gallium nitride (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 178-182 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride layers grown by molecular beam epitaxy on c axis oriented sapphire substrates were implanted with 180 keV magnesium ions with ion doses between 1×1014 and 1×1016 cm−2. The implantation induced defect states were investigated by temperature dependent conductivity (TDC) as well as by thermal and optical admittance spectroscopy (TAS, OAS) measurements. Dominant carrier emissions having thermal activation energies between 360 and 800 meV were found in TAS and TDC. These states are assigned to implantation induced electron traps since they do not appear in the nonimplanted reference sample. Defect states with similar transition energies were also observed in OAS resulting in an enhancement of defect-to-band transitions in the near band-gap region around 3.45 eV, in the blue band around 3.0 eV, as well as in the midgap range for photon energies between 2.5 and 1.80 eV, respectively. In addition, new transitions were found at 2.1 and 1.95 eV. Furthermore, transitions from implantation induced shallow states were observed, i.e., the magnesium acceptor as well as a new donor level at about 70 meV, tentatively discussed as nitrogen vacancy. The critical ion dose for amorphization was determined to be between 5×1015 and 1×1016 Mg+ cm−2 using x-ray diffraction. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421218
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  • 6
    Electronic Resource
    Electronic Resource
    Indium nanowires in thick (InGaN) layers as determined by x-ray analysis (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1395-1397 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 300-nm-thick InGaN layers with In concentrations up to 21% were grown by low-pressure metalorganic chemical-vapor deposition. Besides the InGaN and GaN Bragg peaks, the symmetric (0002) x-ray spectra of strain-relaxed samples show an additional signal which could be identified stemming from metallic tetragonal indium. The indium is incorporated in InGaN with its pseudohexagonal (101) plane parallel to the InGaN(0001) plane in a sixfold configuration. From the widths and intensities of the asymmetric In(211) and the symmetric In(h0h) diffraction peaks, the lateral and perpendicular crystallite sizes of the In inclusions are estimated to be ∼30 and ∼300 nm, respectively, i.e., the In is incorporated in a wire-like manner in the growth direction. In InGaN-based devices such indium wires could act as highly conducting channels detrimental for electronic and optoelectronic applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126043
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  • 7
    Electronic Resource
    Electronic Resource
    Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2211-2213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an electroluminescence test structure which consists of an InGaN/GaN multiquantum well as active region on the top of an AlGaN/GaN multilayer grown by metalorganic vapor phase epitaxy on Si(111) substrate. The integral room-temperature electroluminescence spectrum reveals a peak emission wavelength of 467 nm and a significantly higher brightness than an identical reference structure on sapphire substrate. In microelectroluminescence imaging, two emission peaks at 465 and 476 nm can be separated originating from locally different areas of the diode. Cathodoluminescence measurements in cross section and high-resolution x-ray diffraction measurements show that the structure is less strained than a sample without the AlGaN/GaN multilayer. The AlGaN/GaN multiple layer sequence which has a total thickness of 1.5 μm causes lattice relaxation during growth after a thickness of around 0.9 μm as directly visualized by cathodoluminescence line scans across the diode. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362327
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  • 8
    Electronic Resource
    Electronic Resource
    Evaluation of strain and In content in (InGaN/GaN) multiquantum wells by x-ray analysis (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 689-691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive x-ray analysis including aitch-theta–2aitch-theta scans, reciprocal space mapping, and x-ray reflectivity of 10×(InGaN/GaN) multiple quantum wells (MQWs) is presented. The layers were grown by low-pressure metal–organic chemical-vapor deposition. The strain state and the In concentration in (InGaN/GaN) MQW systems are evaluated with the help of reciprocal space maps around the symmetric (0002) and asymmetric (101¯5) Bragg reflections. Depending on the In incorporation, the MQW system is fully strained, partially relaxed, or exhibits phase decomposition effects. The room-temperature photoluminescence emission energy of a fully strained 10×(In0.125Ga0.875N/GaN) MQW sample is 2.792 eV, which is 133 meV less than the calculated energy gap of 2.925 eV. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124483
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  • 9
    Electronic Resource
    Electronic Resource
    In enrichment in (In,Ga)As/GaAs quantum dots studied by high-resolution x-ray diffraction and pole figure analysis (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2957-2959 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on an x-ray study of a 15×(InAs/InGaAs/GaAs) multiquantum dot stack grown by metal organic chemical vapor deposition using high-resolution x-ray diffraction and pole figure analysis. No direct signal from the quantum dots is found by the high-resolution techniques. All rocking curves on different symmetric and asymmetric Bragg reflections can be simulated within the framework of dynamical theory assuming a perfect tetragonally distorted InAs/InGaAs/GaAs multiquantum well system. The analysis of the diffuse scattering intensity in the vicinity of the (113) reflection in the symmetric scattering geometry, however, reveals a signal from the quantum dots. The quantum dots consist of nearly pure InAs, whereas the mean In concentration in the wetting layer is only 43% indicating a strong In diffusion during the Stranski–Krastanow formation process. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125200
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  • 10
    Electronic Resource
    Electronic Resource
    Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 546-548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In GaN layers grown by molecular beam epitaxy and metalorganic vapor phase epitaxy on c-axis oriented sapphire, a defect-to-band transition at a photon energy of 0.44 eV was found by optical admittance spectroscopy. This transition was investigated as a function of temperature and modulation frequency. The height of the corresponding optical admittance peak shows a thermally activated quenching with an activation energy of 0.4±0.1 eV caused by a thermal carrier emission from the same defect state to the conduction band at higher temperatures. Based on this thermal quenching, the 0.44 eV level is assigned to an electron trap located in the upper half of the gap. The spectral photoionization cross section was determined, resulting in a photoionization energy at 80 K estimated to be below 0.425 eV. The omnipresence of the 0.44 eV electron trap in GaN layers grown by various epitaxial techniques and in different reactors implicates its intrinsic nature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127039
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