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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica B+C 89 (1977), S. 273 
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3965-3971 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry have been used to elucidate the role of surface segregation and preferential sputtering of bismuth in rf-magnetron-sputtered bismuth–iron-garnet films. It turns out that bismuth is enriched by a factor of up to 2.4, as compared to the bulk content, within the first 1–1.5 nm beneath the advancing film surface during growth. Furthermore, Ar+-ion bombardment at projectile energies as low as 50 eV gives rise to a rather complete depletion of bismuth in the garnet surface. As neither surface segregation nor preferential sputtering of bismuth can be observed in as-polished single-crystalline Bi12SiO20 used as our reference, we conclude that the bond strength between bismuth and oxygen is weaker than that of the other garnet constituents. This is confirmed by comparing the calculated sputter yield of the element oxide. Thus, bismuth-rich crystallographically perfect epitaxial iron-garnet films can only be grown by sputtering if the growing film is protected against energetic particle bombardment.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1841-1843 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated ramp-type Josephson junctions and SQUIDs (superconducting quantum interference devices) using an ultrathin barrier layer of NdGaO3 as weak contact between the YBa2Cu3O7 electrodes. The junctions operate up to 82 K, exhibiting current-voltage characteristics of the resistively-shunted-junction type. A normal-state resistance of up to 30 Ω at a junction width of 5 μm and a characteristic voltage in excess of 100 μV at 77 K are obtained. We find hysteretic behavior below 70 K and an intrinsic junction capacitance of about 0.15 μF/cm2 at 4 K. SQUIDs show a transfer function δ V/δ Φ of 50 μV/Φ0 at an inductance of 40 pH at 77 K. Thus we observe excellent Josephson properties at a thickness of the NdGaO3 barrier of 2 nm. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4393-4407 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intrinsic magneto-optical readout performance in reflection is calculated for bismuth and cobalt-substituted iron-garnet films on a multilayer interference mirror at 800-, 633-, 488-, and 420-nm wavelengths and is compared with that of a trilayer medium composed of an antireflection layer, a rare-earth transition-metal film, and a metallic mirror. It is found, when disregarding inhomogeneities, like irregular domain shape, ripple of the magnetic anisotropy, and surface roughness, that iron garnets are superior to rare-earth transition-metal films at blue to near-ultraviolet wavelengths if operated at thicknesses where optical interference occurs in the magnetic layer. Optical transmittance at these thicknesses is sufficiently high so that multilevel recording media can be conceived. In contrast, the optical absorption of rare-earth transition-metal alloys is much higher so that only thicknesses much above interference conditions are feasible, thus precluding them from multilevel recording.This comparative study is supplemented by calculating the magneto-optical performance in reflection of a recently reported multilayer medium composed of an antireflection coating and a periodically repeated sandwich of 4-A(ring) Co and 9-A(ring) Pt layers. In contrast to conventional rare-earth transition-metal films, the magneto-optical Kerr effects of this material do not degrade when decreasing the wavelength from 800 to 400 nm, but still do not reach the performance of bismuth-iron garnets in the green to ultraviolet spectrum. For the garnet system Y3−xBixFe5O12 the spectra of the real and imaginary parts of the diagonal and off-diagonal component of the dielectric tensor εij are reported in the range of photon energies between 1 and 5 eV, i.e., 1240- and 248-nm wavelengths and a bismuth concentration up x=1.4 Bi3+ atoms per garnet formula. In addition, the off-diagonal components ε'12 and ε(large-closed-square)12 are parametrized in terms of paramagnetic optical transitions, taking the spectra for x=1.25 as a typical example. Furthermore, optical and magneto-optical spectra are presented for Co2+- and Co3+- substituted iron garnets and barium hexaferrite BaFe12O19.Finally, the spectral dependence of the magneto-optical figure of merit 2aitch-thetaF/α of (Y,Bi)3Fe5O12 and amorphous TbFe is compared. Furthermore, high-resolution transmission electron micrographs and x-ray double-crystal diffractograms are presented that elucidate the perfect epitaxial alignment of single-crystalline iron-garnet films and the columnar morphology of polycrystalline iron-garnet films prepared by rf magnetron sputtering. The initial nucleation period of polycrystalline garnet films can be influenced by low-energy ion bombardment for improving the film texture. Under favorable sputtering conditions single- and polycrystalline bismuth-iron garnet films develop a perpendicular magnetic anisotopy. It is not yet clear whether sputtered iron-garnet films can meet the critical requirements on magnetic wall coercivity and magnetic remanence.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3879-3888 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality iron-garnet films of composition Gd3−vBivFe5−w−x−yGdw GaxAlyO12−zArz with 1.02≤v≤1.45, 0.01≤w≤0.36, 0.22≤x≤0.24, 0.26≤y≤0.38, and 0.002≤z≤0.014 have been grown epitaxially on (111)- and (110)-oriented gallium garnet substrates with the lattice constant in the range 1.2475≤a0(nm)≤1.2553 by rf magnetron sputtering in argon plasma. For the study of the optoelastic and magnetoelastic properties of these sputter-epitaxial films the lattice mismatch Δa⊥=as−a⊥f has been varied in the range −1.7〈Δa⊥(10−2 nm)〈0.5 by using substrates with various lattice constants. The near-infrared optical anisotropy normal to (Δnxy) and in the plane (Δnyz) of (110)-oriented films turn out to depend linearly on Δa⊥ over this large range of lattice misfits. No growth-induced contribution has been observed. The same behavior is found for the induced uniaxial (K⊥) and in-plane (K(parallel)) magnetic anisotropy constants at room temperature. The optoelastic coefficients P44 and ΔP, as well as the magnetostriction constants λ111 and λ100 inferred from the measured optical and magnetic anisotropies, respectively, compare well with literature values for the considered film compositions if excess gadolinum is taken as diamagnetic substitution on octahedral lattice sites. The epitaxial structure of the films has been confirmed by the narrow x-ray diffraction linewidth from x-ray double-crystal rocking curves and is supported by the extremely low waveguide losses at 1.33-μm wavelength and the low magnetic wall coercivity, i.e., α=0.15 cm−1 and 60 A m−1, respectively. The structural quality of (110)-oriented films is the same as that of (111)-oriented films.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2065-2068 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of single-crystal bismuth iron-garnet films by in situ sputter epitaxy has been extended to "selected-area sputter epitaxy'' (SASE) where epitaxial growth is locally impeded by low-energy (102 eV) ion bombardment of the substrate from an argon plasma before film deposition. Then, in a critical range of substrate temperatures, a pattern of epitaxial and amorphous patches evolves during deposition with high geometrical resolution. The optical and structural properties of both SASE phases are investigated.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3885-3887 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of highly bismuth-substituted iron garnet films by rf magnetron sputtering in a pure argon plasma. Under special conditions the target composition is fully reproduced in the films. Film homogeneity in the noncrystalline state is excellent. Crystallization on lattice-matched garnet substrates occurring during growth above 520 °C substrate temperature and by post-annealing above 650 °C yields the garnet phase, as inferred from the optical and magneto-optic spectra and the saturation magnetization. Residual imperfections appearing after crystallization need further elucidation. We cope with the extreme disparity in the elemental sputter yields of the mixture Gd-Bi-Fe-Al-Ga-O by (i) protecting the growing film from ion bombardment in using a magnetron source and (ii) binding Bi to a more slowly sputtering species, such as in BiFeO3.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Thin Solid Films 13 (1972), S. 335-339 
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Thin Solid Films 114 (1984), S. 69-107 
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 0304-8853
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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