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  • 1
    Electronic Resource
    Electronic Resource
    Properties of TiO〈sub〉2〈/sub〉Films Prepared by the Spray Pyrolysis Method (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 99-100 (July 2004), p. 259-264 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: TiO2 thin films were prepared by spray pyrolysis method. The solution containingtitanium(IV)isopropoxide, acetylacetone and ethanol was deposited onto n-type Si(100) and HD Si(100) wafers at substrate temperatures of 315 to 500 0C by pulsed spray solution feed. The films were characterized by FTIR, XRD, AFM, ellipsometry, impedance and I-V measurements. Asdeposited films prepared below 500 0C were amorphous, whereas crystalline films could be achieved at 500 0C. Subsequent annealing at 700 °C in air led to crystalline anatase formation for films deposited below 400 °C. Rutile phase appears in annealed films prepared at a growth temperature above 400 °C. Anatase TiO2 films show refractive index in the range 2.20 to 2.40 and exhibit a relative dielectric constant value of 75 in the range 1 to 100 kHz. Electric breakdown occurs for 120 nm thick film at 250 kV/cm
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.99-100.259.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Nature of the native deep localized defect recombination centers in the chalcopyrite and orthorhombic AgInS2 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 205-209 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the deep photoluminescence (PL) emission in polycrystalline chalcopyrite and orthorhombic AgInS2. In both phases several PL bands were detected at 8 K. On the energy scale these deep PL bands are positioned according to a regular pattern. This is explained as being due to electron-hole recombination within very close deep donor-deep acceptor pairs, with different distances between donor and acceptor defects. The deep donor defect is an interstitial silver Agi and the native deep acceptor defect appears to be situated at the Ag or In place. The two different crystal modifications also cause slightly different distances between donor and acceptor defects in the AgInS2 lattice and, as a result of this, different spectral positions of the deep PL bands. It is shown that these deep localized donor–acceptor pairs can be reasonably efficient radiative recombination centers up to distances of 5.3 Å between the deep donor and the deep acceptor and, thus, up to six distinct deep PL bands are visible in AgInS2. The deep donor-deep acceptor pair model is confirmed also by the temperature quenching experiments and by the excitation power dependences. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373644
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  • 3
    Electronic Resource
    Electronic Resource
    Standardization of composition of A"I"IB"V"I materials
    Amsterdam : Elsevier
    Surface & Coatings Technology 62 (1993), S. 688-690 
    Details
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0257-8972(93)90320-N
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of CdS films by spray pyrolysis
    Amsterdam : Elsevier
    Thin Solid Films 145 (1986), S. 105-109 
    Details
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0040-6090(86)90257-9
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal Decomposition of Copper(I) Thiocarbamide Chloride Hemihydrate (1998)
    Springer
    Journal of thermal analysis and calorimetry 53 (1998), S. 355-364 
    Details
    ISSN: 1572-8943
    Keywords: copper thiocarbamide complex ; DTA ; EGA ; spray pyrolysis ; TG
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Two combinations of simultaneous thermoanalytical techniques (TG+DTA and TG+EGA) were used to study the thermal decomposition of the title compound in order to gain a better insight into the spray pyrolytic processes leading to Cu2-xS and CuInS2 thin films. After dehydration a complex sequence of reactions starts above 220°C leading through several intermediates to the formation of CuO in air at 1000°C. In an inert atmosphere Cu2S is formed which in helium above 800°C partly decomposes to Cu. XRD and FTIR were used to identify the intermediate solid phases which in air included CuCl, Cu2OSO4, Cu2OCl2 and CuSO4. EGA-FTIR confirmed the complex reaction mechanism with NH3, HCl, H2O, COS, CO2 and some HCN as main gaseous products under oxidative conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1010157528347
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  • 6
    Electronic Resource
    Electronic Resource
    A Thermoanalytical Study of Copper(I) Thiocarbamide Compounds (1999)
    Springer
    Journal of thermal analysis and calorimetry 56 (1999), S. 479-484 
    Details
    ISSN: 1572-8943
    Keywords: copper thiocarbamide complex ; DTA ; spray pyrolysis ; TG
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Hydrated isostructural 1:3 complexes of copper(I) chloride and bromide with thiourea were synthesised and their thermal decomposition studied by simultaneous TG/DTA complemented by ex situ FTIR and XRD studies. The decomposition of Cu(tu)3Cl·H2O is initiated by dehydration around 100°C, followed by a total multi-step degradation of the structure in the temperature range of 200–600°C. The counter ion has some influence on the temperatures and composition of the solid residue. The results were compared with those obtained with the 1:1 complex Cu(tu)Cl·1/2H2O.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1010184107901
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