Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 7-9
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109703
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