ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Stable TiSi2 was formed by rapid thermal annealing (RTA) on single-crystal Si. Subsequently a 600 nm-thick Al-1%Si-0.5%Cu layer was deposited on the top of the formed TiSi2 followed by furnace annealing for 30 min at 400–600
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01198948
Permalink