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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic decoupling in sputtered Fe/Si superlattices and multilayers : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6335-6337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Fe/Si superlattices were grown to study the magnetic coupling between ferromagnetic Fe layers (30 A(ring) thick) for Si spacer-layer thicknesses (tSi) between 10 and 40 A(ring). The material is ferromagnetical for tSi≤13 A(ring) and antiferromagnetically coupled for 13 A(ring)≤tSi≤17 A(ring). For tSi≥17 A(ring) the Fe layers are uncoupled. X-ray analysis indicates that the system is well layered, but that the crystal structure remains coherent only for tSi≤17 A(ring). These results, along with our Mössbauer investigation, strongly suggest that the Si layer is crystalline for tSi≤17 A(ring), and is silicide in nature. For thicker spacers, Si becomes amorphous. We propose a model of the layering that is consistent with the known properties of Fe silicide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352640
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  • 2
    Electronic Resource
    Electronic Resource
    Precipitation and relaxation in strained Si1−yCy/Si heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3656-3668 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the thermal stability of Si1−yCy/Si (y=0.007 and 0.014) heterostructures formed by solid phase epitaxial regrowth of C implanted layers. The loss of substitutional C was monitored over a temperature range of 810–925 °C using Fourier transform infrared absorbance spectroscopy. Concurrent strain measurements were performed using rocking curve x-ray diffraction to correlate strain relaxation with the loss of substitutional C from the lattice. Loss of C from the lattice was initiated immediately without an incubation period, indicative of a low barrier to C clustering. The activation energy as calculated from a time to 50% completion analysis (3.3±5 eV) is near the activation energy for the diffusion of C in Si. Over the entire temperature range studied, annealing to complete loss of substitutional C resulted in the precipitation of C into β-SiC. The precipitates are nearly spherical with diameters of 2–4 nm. These precipitates have the same crystallographic orientation as the Si matrix but the interfaces between the Si and β-SiC precipitates are incoherent. During the initial stages of precipitation, however, C-rich clusters form which maintain coherency with the Si matrix so the biaxial strain in the heterostructure is partially retained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357429
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetostriction of melt-spun Dy-Fe-B alloys : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7021-7023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetostriction of melt-spun ribbons of Dyx(Fe1−yBy)1−x (x=0.2, 0.25, 0.3; 0≤y≤0.2) alloys is systematically investigated as a function of the wheel speed during melt quenching. As the wheel speed increases from 10 to 50 m/s, the magnetic softness improves with the wheel speed rather continuously for the alloys with the Dy content x=0.2 and 0.25 but it exhibits a maximum at the wheel speed of 30 or 40 m/s for the alloys with the highest B content (x=0.3). The softness also improves with the B content for a fixed wheel speed. Homogeneous and ultrafine grain structure is observed for the first time even in the as-spun state when the ribbons of the alloy Dy0.3(Fe0.8B0.2)0.7 are fabricated at the wheel speed of 30 m/s. The ribbon having the ultrafine grain structure exhibits good magnetic softness together with a high strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358074
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence and the band structure of InAsSb strained-layer superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 216-218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photoluminescence measurements were performed on InAs0.13Sb0.87 /InSb strained-layer superlattices. In thick layered structures we observed very low energy transitions proving that a type II superlattice occurs in the InAsSb system. Band structures were calculated based on estimates of the band offsets and strain shifts obtained from the photoluminescence data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100135
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3578-3584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The extent of relaxation and orientation of linearly graded InxAl1-xAs (x=0.05–0.25) buffers grown on GaAs were examined using a novel x-ray diffraction reciprocal-space mapping technique (kmap). Samples were grown at temperatures ranging from 370 to 550 °C. The fractional relaxation of the buffers grown between 470 and 550 °C was essentially identical (77%) and symmetric in orthogonal 〈110〉 directions. These buffers are believed to be in equilibrium indicating that the incomplete relaxation is not a kinetic effect. The extent of relaxation was less than that expected for equilibrium relaxation in the absence of dislocation–dislocation interactions indicating that such interactions must be considered to accurately predict the extent of relaxation. The saturation of the relaxation as a function of temperature indicates that at the grading rate used (8% In/μm or 0.69% strain/μm), we are not working in a growth regime where the relaxation is nucleation limited. In addition, all the buffers are slightly tilted with respect to the GaAs substrate about [11¯0] toward the [110] direction suggesting either a bias in the dislocation types in the boule-grown GaAs, or a bias in the way in which α and β dislocations interact with unintentional substrate miscuts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361410
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  • 6
    Electronic Resource
    Electronic Resource
    Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 637-646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the incorporation of heavily supersaturated C into Si using solid-phase epitaxy (SPE) of implanted amorphous layers. The strain in the Si1−xCx/Si heterostructures was measured using rocking curve x-ray diffraction. The microstructure and defect introduction were examined using ion channeling and transmission electron microscopy (TEM). The fraction of C located on substitutional lattice sites in the Si was monitored using Fourier transform infrared absorption spectroscopy and ion channeling at resonance energies. Carbon-depth profiles were monitored by secondary ion mass spectroscopy. The metastable solubility limit for the incorporation of C into Si by SPE was found to be 3.0–7.0×1020 atoms/cm3, which is over three orders of magnitude above the equilibrium solubility at the Si melting point. This limit was determined by the ability to regrow without the introduction of microtwins and stacking faults along {111} planes. We postulate the local bond deformation resulting from the atomic size difference between C and Si leads to the faceting of the amorphous–crystalline interface and allows defect introduction, thus limiting the C supersaturations achieved in Si by SPE. It was also found that the defect density in the regrown alloys could be reduced by higher SPE regrowth temperatures in rapid thermal anneal processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360806
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  • 7
    Electronic Resource
    Electronic Resource
    Photo-induced antiferromagnetic interlayer coupling in Fe superlattices with iron silicide spacers (invited) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6169-6173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Fe/FeSi films possessing antiferromagnetic (AF) interlayer coupling at room temperature develop ferromagnetic remanence when cooled below 100 K, but the AF coupling can be restored at low temperature by exposure to visible light of sufficient intensity ((approximately-greater-than)10 mW/mm2). We attribute these effects to charge carriers in the FeSi spacer layer, which, when thermally or photogenerated, are capable of communicating spin information between the Fe layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355446
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  • 8
    Electronic Resource
    Electronic Resource
    Trapping of deuterium by helium bubbles and defects in ion-implanted tantalum (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1137-1148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nuclear reaction analysis and ion implantation techniques were used to investigate the trapping of deuterium (D) by He bubbles and implantation defects in Ta. A series of four complementary temperature ramp experiments have enabled us to determine that: (1) the binding enthalpy of D at trap sites associated with He bubbles in Ta is 0.53±0.05 eV relative to solution sites; (2) the binding enthalpies of D at implantation defects in Ta are 0.53±0.10, 0.42±0.10, and 0.33±0.10 eV; and (3) the approximate number of He bubble trap sites produced per He atom implanted into Ta is 0.45 for mean He atomic fractions ranging from 1.5% to 2.5%. The measured binding enthalpies are compared with effective-medium theory calculations of the binding enthalpies of both hydrogen chemisorption sites and monovacancy sites containing from one to six trapped hydrogen atoms. This comparison suggests that the strongest 0.53-eV traps associated with implanted He are bubbles which trap hydrogen on their interior surface via a chemisorptionlike mechanism. The strong 0.53-eV defect trap sites are probably vacancy clusters, whereas the 0.42-eV defect traps appear to be monovacancy sites containing one to two hydrogen atoms, and the 0.33-eV sites appear to be monovacancy sites containing three to six hydrogen atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343454
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  • 9
    Electronic Resource
    Electronic Resource
    Ferromagnetic resonance behavior of evaporated Gd-Fe alloy films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3982-3988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bulk and local magnetic properties have been investigated for evaporated Gd-Fe alloy films. The origin of the multiresonance fields of amorphous Gd-Fe alloy films was speculated to be due to several compositionally different short-range-ordered structures. These results yield the locally different magnetic properties, such as the Curie temperatures, magnetizations, g values, and anisotropy field difference. The magnetization of the annealed alloy film increase mainly due to the ferromagnetically ordered α-Fe and α-Gd precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337521
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  • 10
    Electronic Resource
    Electronic Resource
    Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the insertion of low-temperature AlGaN interlayers is effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks during growth of high-temperature AlGaN directly upon GaN epilayers. Stress evolution and relaxation is monitored using an in situ optical stress sensor. The combination of in situ and ex situ characterization techniques enables us to determine the degree of pseudomorphism in the interlayers. It is observed that the elastic tensile mismatch between AlGaN and GaN is mediated by the relaxation of interlayers; the use of interlayers offers tunability in the in-plane lattice parameters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336812
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