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  • 1
    Electronic Resource
    Electronic Resource
    Photochemical preparation of crystalline silicon nanoclusters (1991)
    s.l. : American Chemical Society
    Chemistry of materials 3 (1991), S. 989-992 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00018a003
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  • 2
    Electronic Resource
    Electronic Resource
    The diffusion of elements implanted in films of cobalt disilicide (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2973-2980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of several elements implanted into layers of CoSi2 with a nominal thickness of 800 nm, grown by metal-silicon reaction, has been studied by secondary ion mass spectroscopy. Boron has by far the highest mobility. It is totally homogenized by heat treatment for 0.5 h at 800 °C; it displays evidence of grain-boundary diffusion at 400 °C and of lattice diffusion at 450 °C. The next group of elements, gallium, phosphorus, and germanium (used as a tracer in lieu of a silicon isotope) diffuse distinctly less rapidly, and remain nonhomogenized after annealing at 800 °C. The lattice diffusion of arsenic and antimony is not detectable (by the means presently used), even after heat treatment at the same relatively high temperature. Low-temperature effects, and effects far away from the implanted region, are dominated by grain-boundary diffusion. The lattice diffusion increases from boron to phosphorus and germanium, with activation energies determined to be 2.0 and 2.7 eV for boron and phosphorus, respectively. The results are discussed by comparison with those previously obtained with TiSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341560
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  • 3
    Electronic Resource
    Electronic Resource
    Unique x-ray diffraction pattern at grazing incidence from misfit dislocations in SiGe thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 89-96 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grazing-incidence x-ray diffraction (GIXD) permits the direct measurement of in-plane lattice parameters of SiGe films that are too thin to yield good results from normal-geometry triple-axis techniques. A unique "X''-shaped pattern has been seen in H–K reciprocal space maps of diffracted x-ray intensity from SiGe films that have relaxed via a modified Frank–Read mechanism. Contours of intensity are seen along the 〈110〉 directions from the (4¯00) reciprocal lattice peak with the introduction of the first dislocations. For higher dislocation densities the X-shaped contours are anisotropically distorted and a satellite peak, corresponding to the lattice parameter for a partially relaxed film, becomes identifiable at lower H. In contrast, H–K reciprocal-space contours from thin SiGe films that have relaxed by roughening and subsequent random nucleation of dislocations display broad, oval-shaped contours centered at the (4¯00) reciprocal lattice point for the film. Numeric simulations of GIXD from a variety of dislocation arrangements were performed in order to understand the origin of the X pattern. We show that this pattern arises from an array of long misfit dislocations running in the 〈110〉 directions. The anisotropic distortion of the X pattern arises at higher dislocation densities from orthogonal intersections of dislocations with equal Burgers vector, which are characteristic of dislocation networks generated by the modified Frank–Read mechanism. We also verify that the measured values of the in-plane lattice parameter, together with the out-of-plane lattice parameter determined from the symmetric (004) reflection, lead to accurate calculation of the composition and strain in these SiGe layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362776
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  • 4
    Electronic Resource
    Electronic Resource
    Dopant redistribution during oxidation of SiGe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 751-753 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter compares diffusion of boron in Si during oxidation both for pure Si and for Si covered with a very thin layer of SiGe alloy. It demonstrates that the thin layer of SiGe suppresses oxidation enhanced diffusion of boron. A mechanism is proposed based on suppression of Si interstitials. This phenomenon is then related to the faster rate of oxidation of bulk SiGe and SiGe-covered Si samples reported previously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100882
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  • 5
    Electronic Resource
    Electronic Resource
    Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 644-646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rates of oxidation of SiGe and of Si covered with a thin "marker'' of Ge have been measured, and compared with rates of oxidation for pure Si, both for wet and dry ambient. It is shown that the presence of Ge at the SiO2/Si interface increases the rate of wet oxidation by a factor of about 2.5, while it does not affect the rate of dry oxidation. By decreasing the partial pressure of H2O sufficiently, the rate of wet oxidation can be decreased to match that of dry oxidation. In this case again, Ge has no effect on the rate. Contrary to what has been proposed before, Ge is being piled up at the interface both for fast and slow oxidation. We demonstrate that the role of Ge is to suppress the formation of Si interstitials and that this is the rate limiting step in cases of rapid oxidation. For slower oxidation, interstitials have considerably more time to diffuse away and thus their formation and/or diffusion is not rate limiting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100905
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  • 6
    Electronic Resource
    Electronic Resource
    Strain symmetrization effects in pseudomorphic Si1−yCy/Si1−xGex superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 739-741 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on strain and stability measurements on pseudomorphic Si1−yCy/Si1−xGex superlattices which are synthesized by solid source molecular beam epitaxy on silicon (100) substrate. The strain in the superlattices alternates between tensile and compressive in the individual Si1−yCy and Si1−xGex alloy layers, respectively. A symmetrical strain distribution can be achieved directly on silicon by adjusting the carbon and the germanium content and/or the thickness of the individual layers. X-ray diffraction and transmission electron microscopy are applied to investigate the structural properties and the thermal stability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111051
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of β-SiC nanocrystals by the relaxation of Si1−yCy random alloy layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 324-326 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we consider the relaxation behavior of Si1−yCy random alloys grown epitaxially on Si, with 0.005(approximately-greater-than)y(approximately-greater-than)0.05. The Si1−yCy layers are under tensile strain as grown and at annealing temperatures below 900 °C the relaxation of strain is achieved by dislocation formation, in a fashion similar to SiGe relaxation. However, at temperatures in excess of 900 °C the C, which at lower temperatures remained in substitutional sites, precipitates out of the lattice, this removes all of the tensile strain from the layer. The nature of this precipitation is to form single crystal, nanoparticles of β-SiC with the same lattice orientation as the Si lattice in which they are created. These nanoparticles are of uniform diameter (3±1 nm for y=0.005 Si1−yCy material) and randomly dispersed throughout the original Si1−yCy region. This ability to produce nanocrystals of wide band-gap material within the Si matrix should enable the exploration of mesoscopic phenomena. The nanoparticles once formed also block the movement of dislocations, thus locking in any strain fields associated with the dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111195
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  • 8
    Electronic Resource
    Electronic Resource
    Dislocation nucleation barrier in SiGe/Si structures graded to pure Ge (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2845-2847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution triple-axis x-ray diffraction measurements were used to study strain relaxation in the individual layers of a SiGe/Si structure step-graded to pure Ge. The tilt of each layer is explained by extending the model previously proposed for obtaining the nucleation activation energy of dislocations to account for the reduced miscut of the growth surface as the sample relaxes and the variation in the materials properties with alloy composition. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112511
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  • 9
    Electronic Resource
    Electronic Resource
    Nucleation of dislocations in SiGe layers grown on (001)Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3968-3977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive x-ray-diffraction study of the variation of the tilt angle between a Si1−xGex layer and the (001) Si substrate is presented. Such measurements provide the basis of a new method for determining the nucleation activation energy of misfit dislocations. A detailed model, independent of the particular relaxation mechanism, is derived which relates the tilt angle to the nucleation activation energy on the different slip systems and to the density of misfit dislocations. The model has been applied to the modified Frank–Read mechanism observed in graded samples. Relaxation occurs in such samples for strain in the range 0.002≤ε≤0.006 with an activation energy of about 4 eV. The critical thickness for growth of a strained layer is shown to be smaller when the substrate is miscut than when it is well oriented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356992
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  • 10
    Electronic Resource
    Electronic Resource
    Relaxation of SiGe thin films grown on Si/SiO2 substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7240-7246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation in Si/SiGe bilayers grown on top of SIMOX wafers has been studied. By judiciously choosing the thickness ratios of the Si and SiGe, it is possible to relax the bilayer through the glide of dislocations exclusively in the Si layer, leaving the top SiGe layer relaxed and (mostly) dislocation free. This approach is completely different from previously proposed ways of reducing the number of threading dislocations in SiGe films because at no stage during the relaxation process are new threads introduced in the top SiGe layer. It is shown that the Si/SiGe bilayer behaves as a free-floating foil constrained to remain flat by the substrate, even at temperatures as low as 700 °C. The relaxation is shown to proceed until the strain left in the Si layer is too low for dislocations to glide. When the temperature is raised to 1050 °C, interdiffusion between the two layers forces the dislocation network to move into the SiGe through glide. The original network of 60° dislocations can then react to form a network of edge dislocations, which had never been observed before in this system. At such high temperature, glide is no longer the limiting factor for relaxation, and almost complete relaxation is attained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356682
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