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  • 1
    Electronic Resource
    Electronic Resource
    Applications in Electronic Industry Part Two - Radiation Hardening (1992)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 30-31 (Jan. 1992), p. 387-396 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.30-31.387.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    DMILL (Durci Mixte sur Isolant Logico-Lineaire) A mixed analog-digital radiation hard technology for high energy physics electronics
    Amsterdam : Elsevier
    Nuclear Physics B (Proceedings Supplements) 32 (1993), S. 530-534 
    Details
    ISSN: 0920-5632
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0920-5632(93)90067-G
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  • 3
    Electronic Resource
    Electronic Resource
    Comparative study of radiation-induced electrical and spin active defects in buried SiO2 layers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3634-3640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of paramagnetic defect and positive fixed oxide charge creation in x-irradiated buried SiO2 formed by ion implantation and annealing are presented. Charged oxygen-vacancy centers are argued to be the source of spin active defects but not the primary source of fixed oxide charge. Hydrogenation or fluorination of the oxide enhances the radiation sensitivity for creation of spin active defects but not of trapped positive charge. Annealing of the spin active defects may proceed by a mechanism similar to that involved in charged defect annealing or by the trapping of thermally detrapped, diffusing electrons. Annealing does not involve the trapping of diffusing molecular species as is usual in bulk oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352306
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  • 4
    Electronic Resource
    Electronic Resource
    Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 175-186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microscopic nature of the degradation of oxide layers in Si/SiO2/Si structures induced by annealing in the temperature range 1200–1320 °C in inert or weakly oxidizing atmospheres has been studied. Electron-spin-resonance measurements have been performed on unannealed and annealed samples subsequently subjected to γ or X radiation or hole injection. Two oxygen-vacancy-related defect centers were observed, the monovacancy Eγ' center and the multiple vacancy Eδ'—both were observed in substantially larger numbers in annealed oxides as compared to unannealed oxides. Etchback profiling of the paramagnetic defect distributions shows that they are distributed nonuniformly throughout the annealed oxides with the highest densities close to the two Si/SiO2 interfaces. Electrical measurements of fixed oxide charge induced by X irradiation indicate that annealing results in the creation of both positive and negative charge traps. The numbers of positive trapped charges and their radiation dose dependence are inconsistent with their origin being identified simply with the paramagnetic oxygen-vacancy centers. Infrared measurements of the O interstitial content of the float-zone Si substrates of annealed and unannealed samples reveal that the interstitial concentration increases as a function of anneal temperature/time. Atomic force microscopy measurements reveal that the SiO2/Si substrate interfaces are roughened during high-temperature annealing. The data are interpreted in terms of a model in which oxygen is gettered from the oxide film into the over- and underlying Si. The O are incorporated into the Si as interstitials and it is their solubility limit at the anneal temperature which drives the gettering process. The oxygen-vacancy defect profiles near to both Si/SiO2 interfaces are not well predicted by the gettering model suggesting that other interface-related defect creation processes may be active. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359365
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1775-1777 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Ta2O5 thin films have been obtained from TaF5 and O2 using a microwave excited electron cyclotron resonance plasma at low pressure (∼2 mTorr). Physical and electrical measurements reveal that the as-deposited amorphous films have excellent properties: refractive indices ∼2.16, dielectric constants ∼25, and leakage currents 〈10−10 A cm−2 at 2.5 V (0.3 MV cm−1, 85 nm thick, 13 nm SiO2 equivalent). Trapping and conduction properties of these layers have also been investigated, showing a reversible electron trapping and a trap-limited Poole–Frenkel effect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116663
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of high temperature processing of Si/SiO2/Si structures on their response to x-ray irradiation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2088-2090 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiation response of Si/SiO2/ Si structures subjected to x-ray irradiation in the presence and absence of applied electric field has been studied as a function of accumulated dose. High temperature annealing of sandwiches involving thermally grown oxide results in a softening of the radiation response, evidence for both hole and electron trapping is found. Similar behavior is found in buried oxide layers produced by O+ implantation, then subjected to high temperature annealing. Evidence for majority hole trapping is found in unannealed, thermal oxide. It is suggested that high temperature annealing results in a reduction of the oxide which is driven by the Si/SiO2 interface, resulting in electron and hole trap generation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110601
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  • 7
    Electronic Resource
    Electronic Resource
    Ultraviolet radiation induced defect creation in buried SiO2 layers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2275-2277 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The creation of oxygen-vacancy defects in amorphous SiO2 films produced by O+ implantation and annealing has been studied using radiation from a microwave excited Kr plasma. Photons having λ≤125 nm are found to create saturation densities ∼1.3×1019 cm−3 whereas for λ≥ (R18)200 nm the saturation density is ∼3.4×1017 cm−3. It is argued that simultaneous defect creation and annihilation may occur for long wavelength, sub-band-gap energy photons. Strongly enhanced defect creation (≤970 times) is observed as compared to bulk, amorphous SiO2 in the form of Suprasil 1 plate. It is suggested that this may be due to H sensitization of the defect precursors (O3≡Si—Si≡O3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106042
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  • 8
    Electronic Resource
    Electronic Resource
    Possible Pulsed Gamma Ray Emission above 50 MeV from the Crab Pulsar (1970)
    [s.l.] : Nature Publishing Group
    Nature 226 (1970), S. 534-535 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The detector consists of a multiplate spark chamber (thirteen plates of thickness 0.033 radiation lengths and area 850 cm2), shielded by an anticoincidence scintillation counter. The chamber is triggered by the coincidence telescope of a plastic scintillation counter (500 cm2) and a directional ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/226534a0
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  • 9
    Electronic Resource
    Electronic Resource
    An experimental facility for the study of effects of heavy ion irradiation on logic microcircuits
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 28 (1987), S. 443-452 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(87)90186-8
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  • 10
    Electronic Resource
    Electronic Resource
    Callus characteristics following intramedullary nailing with stainless steel or epoxy-carbon nails (1984)
    Springer
    Archives of orthopaedic and trauma surgery 103 (1984), S. 131-136 
    Details
    ISSN: 1434-3916
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Biologische und mechanische Fortschritte auf dem Gebiet der Osteosynthese lassen die Marknagelung zu einer attraktiven Alternative zur Plattenosteosynthese wurden. Es ist jedoch wenig bekannt über die Abschirmung des Knochens gegenüber der mechanischen Beanspruchung durch die Implantation eines Marknagels. Um den Einfluß der Steifigkeit des Nagels auf die Knochenheilung zu überprüfen, wurden beim Schaf Metatarsalosteotomien in Schaftmitte durchgeführt und entweder mit einem rostfreien Stahlnagel oder mit einem Epoxy-Kohlenstoff-Nagel mit V-Profil stabilisiert. Mechanische und histomorphometrische Eigenschaften des Knochens wurden 4 Monate postoperativ ermittelt. Für beide Gruppen wurden bei den mechanischen und mikrostrukturellen Befunden keine statistisch signifikanten Unterschiede gefunden. Für these Überein-stimmung wurde eine fibröse Membran in der Kontaktfläche zwischen dem Marknagel und dem umgebenden Knochengewebe, die feine Bewegungen des Implantates erlaubt, verantwortlich gemacht. Ein wesentlich geringerer Effekt wurde der Steifigkeit des Nagels im Vergleich zu einer Plattenosteosynthese beigemessen. In diesem Heilungsstadium waren die Befunde am Knochen mehr mit einer unspezifischen (vaskulären) Umbaureaktion als mit einer Abschirmung gegenüber mechanischer Beanspruchung in Zusammenhang zu bringen.
    Notes: Summary Biological mechanical improvements of osteosynthesis make intramedullary nailing an attractive alternative to bone plate fixation. However, little is known about stress shielding induced by intramedullary implantation of a nail. To evaluate the effect of the nail rigidity on bone healing, mid-metatarsal osteotomies were performed in sheep and fixed with either stainless steel or epoxy-carbon composite V-shaped nails. Mechanical and histomorphometric features of the callus were evaluated 4 months postoperatively. No statistical difference between the two groups were demonstrated for either mechanical or microstructural characteristics. The presence of a fibrous membrane filling the bone/nail interface and allowing sliding micromotions of the implants and the much smaller effect of nail rigidity, as compared to bone plate after implantation, were assumed to be the main reason for this uniformity. At this stage of healing, bone characteristics were more related to a non-specific (vascular) bone remodeling phenomenon than to a stress-shielding effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00389587
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