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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature-dependent electron-spin-resonance linewidth ΔH(T) may be used to investigate the effect of the geometry and interlayer material on the magnetic properties of multilayered systems. We compare ΔH(T) in CuMn/Al2O3 multilayers with previous measurements of CuMn/Cu samples. CuMn/Al2O3 samples with CuMn thicknesses, WSG, from 40 A(ring) to 20 000 A(ring) obey the same form as the CuMn/Cu system, but show quantitative differences in the fitting parameters. The linewidths of the CuMn/Al2O3 samples, even in the bulk, are systematically larger than the linewidths for the CuMn/Cu samples, suggesting that the ESR linewidth is sensitive to differences in sample growth and structure. The value of the minimum linewidth decreases with decreasing WSG in the CuMn/Al2O3 series, but remains constant in the CuMn/Cu series. Although susceptibility measurements of the freezing temperature Tf do not differentiate between samples with WSG≥5000 A(ring), the ESR linewidth is sensitive to changes at larger length scales. This experiment emphasizes the importance of considering both the total sample thickness, as defined by the range of the conduction electrons, and the spin-glass layer thickness in analyzing the ESR linewidth in multilayers.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5970-5972 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The return from "quasi-two-dimensional'' to three-dimensional behavior of the spin-glass (SG) CuMn(13.5%) is studied in multilayer samples using pure Cu as an interlayer material. We measure how the quasi-static spin-freezing temperature Tf increases as the interlayer thickness Wil is decreased from 30 nm (2D) to 1 nm (3D), keeping the SG layer constant at WSG=4 nm. Alternative interpretations of this behavior have been used in terms of a simple mean-field RKKY model, the phenomenological scaling theory, and the Fisher and Huse droplet model of SG.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5252-5254 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic properties of Cu (13.5 at. % Mn) spin-glass films of various thicknesses have been investigated in a superconducting quantum-interference device (SQUID) magnetometer. The films are produced in a dc-sputtering system and fabricated in the form of multilayer samples. Utilizing zero-field-cooled magnetization and ac-susceptibility measurements, the time-dependent susceptibility has been probed over eight decades in time (10−4–104 s). Drastic changes of the dynamics are found upon varying the film thickness from 104 to 20 A(ring). The most significant feature is a crossover from a behavior typical for bulk spin glasses for the 104-A(ring) film, with a finite critical temperature and a critical slowing down that can be accurately described by a conventional power-law divergence, to a slowing down for the very thin films that obeys a generalized Arrhenius law with a zero-temperature critical point. Thus, these measurements indicate a crossover from three- to two-dimensional spin-glass dynamics when one spatial dimension is gradually diminished to a finite size.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1916-1918 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel characterization method using magnetoconductivity tensor components to determine the carrier concentration and mobility of majority and minority carriers is presented. Results are given for bulk n-HgCdTe (one carrier), liquid phase epitaxial n-HgCdTe (two carriers), and p-InSb (two or three carriers). Advantages of this method over the standard Hall coefficient analysis are discussed.
    Type of Medium: Electronic Resource
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