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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Optical investigation of quaternary GalnAsSb/AlGaAsSb strained multiple quantum wells'' [Appl. Phys. Lett. 67, 3432 (1995)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2591-2591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116792
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  • 2
    Electronic Resource
    Electronic Resource
    Trap suppression by isoelectronic In or Sb doping in Si-doped n-GaAs grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3497-3504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of isoelectronic doping of GaAs by In or Sb on the electron deep levels in n-GaAs grown by molecular-beam epitaxy have been investigated in the growth temperature range 500–600 °C for Si doping levels of 4–7×1016 cm−3 and As-stabilized conditions. The two dominant traps M3 and M6 are drastically reduced in concentration by up to three orders of magnitude for M3 (from 1015 cm−3 down to 〈1012 cm−3) and two and a half orders of magnitude for M6 by introducing 0.2–1 at.% In or Sb and increasing growth temperatures from 500 to 550 °C. The trap concentrations of M3 and M6 were also significantly reduced by increasing the growth temperature to 600 °C without In or Sb doping and by decreasing the growth rate from 1.0 to 0.3 μm/h. The incorporation coefficients of In and Sb have been measured and are found to decrease with increasing growth temperature. The growths with high M3 and M6 trap densities are shown to have short minority-carrier diffusion lengths. Indium isoelectronic doping, which is presumed to take place on a gallium sublattice site, and Sb doping, which is expected to take place on an arsenic sublattice site, appear to have rather similar effects in suppressing the concentration of the M3 and M6 electron traps. This suggest that both of these traps are in some way related to (VAsVGa) complexes or (VAsXVGa) complexes where X is different for M3 and M6 and might be interstitial or impurity related.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341486
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells [J. Appl. Phys. 78, 5696 (1995)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4474-4474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362717
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5696-5700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the dependence on the excitation power and temperature of the photoluminescence emission from a quaternary Ga0.75In0.25As0.04Sb0.96/Al0.22Ga0.78As 02Sb0.98 strained multiple- quantum-well structure grown by molecular-beam epitaxy. Sharp exciton resonances are observed up to room temperature and have been attributed to localized excitons for temperatures ≤80–100 K and to free excitons at higher temperatures up to room temperature by a comparative study with temperature-dependent absorption spectroscopy. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly due to the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359628
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  • 5
    Electronic Resource
    Electronic Resource
    Microstructure, heat treatment, and oxidation study of porous silicon formed on moderately doped p-type silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 492-496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A porous Si (PS) layer with a spongy microstructure on top of a dendritic microstructure was fabricated on a moderately doped p-type Si wafer using a two-step anodization process. This illustrates that in addition to substrate doping, anodization current density also has an effect on the porous Si microstructure. A preoxidation heat treatment of the spongy-type porous Si was found to change the porous structure significantly, making it more difficult to fully oxidize the layer at low temperatures. However, dendritic porous Si can better withstand the heat treatment without suffering noticeable changes in structure. X-ray photoelectron spectroscopy, infrared spectroscopy, and electrical breakdown tests were used to analyze the oxidized porous Si samples. The oxidation process and the resultant oxide were found to depend on several factors, including the porosity, the microstructure itself (e.g., spongy or dendritic-type), and the heat treatment history prior to oxidation. With similar porosity, dendritic PS is easier to oxidize compared to spongy PS. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364107
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature-dependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2139-2141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the temperature-dependent exciton behavior in a quaternary Ga0.67In0.33As0.01Sb0.99/Al0.25Ga0.75As 0.2Sb0.98 strained single-quantum-well (SQW) structure by photoluminescence spectroscopy. Strong exciton resonances are observed and have been attributed to localized excitons below 80 K and to free excitons at high temperatures. Nevertheless, we show that the experimental results of stronger exciton–phonon coupling in the quaternary SQW structure would lead to partial ionization of free excitons at temperatures above 125 K, in good agreement with the line-shape analysis of the luminescence spectra which clearly shows the presence of band-to-band recombination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361072
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  • 7
    Electronic Resource
    Electronic Resource
    Energy filters using modulated superlattices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1963-1967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we demonstrate that a randomly chosen "Λ" shape modulated superlattice can serve as a better energy filter than an unmodulated superlattice. The oscillation of transmission probability in the minibands of the Λ shape modulated superlattice is shown to be greatly suppressed. We also demonstrate that precise control of the potential shape is not crucial for energy filters. The results should have prospective application in quantum cascade lasers, in which the improved energy filter can serve as the injection/relaxation region between active regions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372121
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  • 8
    Electronic Resource
    Electronic Resource
    Current self-oscillation and driving-frequency dependence of negative-effective-mass diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3524-3526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed spatio-temporal current patterns and current–voltage characteristics of negative-effective-mass (NEM) p+pp+ diodes driven by dc bias and terahertz (THz) electromagnetic radiation. Interesting nonlinear dynamics are presented, including current synchronization, frequency doubling, and transition to chaos. Discussions of suppressing possible chaos in NEM semiconductor devices are included. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419045
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  • 9
    Electronic Resource
    Electronic Resource
    Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3432-3434 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and absorption measurements were carried out on quaternary Ga0.75In0.25As0.04Sb0.96 /Al0.22Ga0.78As0.02Sb0.93 strained multiple quantum well (MQW) structure grown by molecular-beam epitaxy to investigate its band offsets and subband behavior. Strong luminescence and well-resolved excitonic absorption peaks are observed even at room temperature, which is indicative of good quality of our quaternary sample. By fitting the experimental results with the theoretical calculations, we find that the light holes are in Ga0.75In0.25As0.04Sb0.98 well regions (type I MQW) and the conduction-band offset ratio Qc=0.66±0.01. The transition from type I to type II for light holes may occur for the composition of x≤0.70 in GaxIn1−xAs0.04Sb0.96/ Al0.22Ga0.78As0.02Sb0.98 system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115270
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  • 10
    Electronic Resource
    Electronic Resource
    Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4491-4494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual donors in the high purity InP epitaxial layer grown by gas source molecular beam epitaxy (GSMBE) have been identified by a photothermal ionization technique in a magnetic field. The dominant residual donors in GSMBE InP are identified to be silicon and sulfur. The Zeeman effect of the hydrogenic donors has also been investigated. The 1s–3p photothermal ionization transitions of the hydrogenic donors are observed even at zero magnetic field. The photoconductivity transition related to the LO phonon is observed and discussed. Furthermore, the photothermal ionization transitions arising from different chemical donors are also clearly resolved in a magnetic field. From the spectral peaks in magnetic field, the electron effective mass m* in GSMBE InP is estimated to be (0.0817±0.0002)m0. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363410
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