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  • 1
    Electronic Resource
    Electronic Resource
    Fractal growth at dendrite tips in an ion-irradiated thin solid film (1988)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 1117-1123 
    Details
    ISSN: 0392-6737
    Keywords: Whiskers and dendrites: growth, structure and nonelectronic properties ; PACS 61.50.Cj ; Physics of crystal growth ; Ions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Experimental observations of fractal growth at dendrite tips during crystalline-to-amorphous phase transition in an ion-irradiated Mo65Ni35 thin film are reported. It was found that the observed anisotropic fractal patterns were of a DLA type but not exactly self-similar. The possible mechanism of this exception to the ordinary parabolic tip growth of the dendrites is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02450208
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  • 2
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of Fe–N films prepared by ion-beam-assisted deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3299-3302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe–N films were prepared by ion-beam-assisted deposition at different N/Fe atomic arrival ratios to the substrates. Films consisted of nitrogen-rich α-Fe and different phases of iron nitrides including ζ-Fe2N, ε-Fe2-3N, and γ′-Fe4N were formed. The phase composition of Fe–N films was found to depend sensitively on the N/Fe atomic arrival ratio and deposition temperature. The magnetic properties of the films mainly depends on phase composition. It was found that nitrogen-rich α-Fe films exhibited higher Ms than that of the pure iron film, and their Ms could be increased further by vacuum annealing at relatively low temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360021
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic Co/Al multilayers prepared by planar magnetron sputtering (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3379-3381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structures and magnetic properties of Co/Al multilayers prepared by means of planar magnetron sputtering were investigated. We compare the results with those of the previously reported films fabricated by electron-beam deposition. It is found that remarkable differences exist between the films synthesized by the two methods. For example, the sputtered multilayers show a transition from in-plane to out-of-plane magnetization at a crossover thickness of Co layer from 14 to 7 A(ring). For samples with tCo ≤ 6 A(ring), the Co layers were discontinuous. Formation of the CoAl compound in the samples has not been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349279
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  • 4
    Electronic Resource
    Electronic Resource
    Reverse sequence of formation of titanium nitrides by nitrogen implantation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4942-4945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature implantation was conducted for the thin titanium films by 80-keV nitrogen ions. It was found that TiN began to appear at a dose around 2×1017 N/cm2, and the titanium film converted entirely into TiN after 1×1018 N/cm2 implantation. Surprisingly, Ti2N, which has a lower N/Ti ratio than TiN, was only detected at an even higher implantation dose, e.g., as high as 2×1018 N/cm2. This reverse sequence of titanium nitride formation was attributed to the structural compatibility between the matrix and new phase being formed. Viewed in this light, a shearing mechanism is proposed, which can explain the titanium nitride formation, and is also applicable to other metal nitrogen systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340437
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  • 5
    Electronic Resource
    Electronic Resource
    Raman spectroscopy of nanocrystalline GaN synthesized by arc plasma (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4562-4567 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a Raman study of nanocrystalline GaN with the wurtzite structure synthesized by arc plasma method. Resonant Raman scattering is observed using 514.5 nm (2.41 eV) laser excitation, which is near the band gap of the "yellow band" (2.2–2.3 eV). Under such near-resonant excitation, new Raman bands unexpected in an ideal wurtzite GaN crystal were found. The transverse optical modes of A1 (531 cm−1) and E1 (560 cm−1), and the nonpolar modes of E2 [567 cm−1 (high) and 143 cm−1 (low)] normally observed in bulk crystals, were recorded and were observed to be resonantly enhanced. Two new bands (680 and 344 cm−1) were assigned to the inactive optical phonon modes B1 (high) and B1 (low), respectively. A broadband centered at 710 cm−1 was attributed to surface modes of the nanocrystals, providing good agreement with the calculated result based on Fröhlich theory. As a result of this study, Raman scattering of GaN nanocrystals has been characterized. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452762
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of the fractal patterns in Ni-Zr thin films during ion-solid interaction (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2879-2881 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study of the growth of fractal patterns during ion beam-solid interaction in the Ni-Zr alloy system is reported. The observed fractal patterns in the alloy films feature both isotropic and anisotropic characters depending on their growth surroundings. The fractal dimension of the isotropic fractal patterns is determined to be 1.4±0.1. The possible growth mechanism of the observed patterns is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340947
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature dependence of the Raman spectra of single-wall carbon nanotubes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2053-2055 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of single-wall carbon nanotubes (SWCNTs) were measured at different temperatures by varying the incident laser power. The elevated temperature of the SWCNTs and multiwall carbon nanotubes (MWCNTs) is confirmed to be due to the presence of impurities, defects, and disorder. The temperature coefficient of the frequency of the C–C stretching mode E2g (GM) and that of the radial breathing mode in the SWCNT were determined to be ∼−0.038 and ∼−0.013 cm−1/K, respectively. It is found that the temperature coefficient of the GM in the SWCNT is larger than that of the MWCNT, highly oriented pyrolytic graphite, and the graphite. This is attributed to the structural characteristic of the SWCNT—a single tubular carbon sheet with smaller diameter. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126252
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  • 8
    Electronic Resource
    Electronic Resource
    Synthesis of ultrafine gallium nitride powder by the direct current arc plasma method (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1285-1287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafine gallium nitride (GaN) powder has been synthesized by the dc arc plasma method through the reaction of metal gallium (Ga) with the mixture gas of nitrogen ( N2) and ammonia ( NH3). The analyses of the produced powder by x-ray diffraction, transmission electron microscopy, and selected-area electron diffraction showed that the GaN particles in wurtzite structure consisted of nanometer-sized polycrystals and monocrystals. The conversion of Ga to GaN was determined by the mixture ratio of NH3 and N2 in the mixture gas. The morphology of the GaN particles was mainly hexagonal with the size about 20–200 nm. When heated in air or nitrogen atmosphere, the thermostablity of the GaN powder was different. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117393
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  • 9
    Electronic Resource
    Electronic Resource
    Hardness measurement of thin films: Separation from composite hardness (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1402-1404 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A composite hardness model based on the function of depth weight factor is presented. The model can be applied to determine the characteristic hardness of surface coatings which are too thin for the hardness to be directly measured. Its application requires only composite hardness data obtained from coated specimens by conventional microhardness measurement. DLC, TiN, and Cu films on substrates of glass, silicon, and AISI 52100 steel were used to verify this composite hardness model. It proved valid for a variety of cases. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117595
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  • 10
    Electronic Resource
    Electronic Resource
    Abrasive wear studies of nitrogen-implanted aluminium and titanium
    Amsterdam : Elsevier
    Surface & Coatings Technology 37 (1989), S. 31-36 
    Details
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0257-8972(89)90119-9
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