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Backscattered deposition in Ar sputter etch of silicon dioxide (1993)

Chang, C. Y. ; McVittie, J. P. ; Saraswat, K. C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 2294-2296

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Detailed mechanisms of sputter etch of silicon dioxide in argon plasma are studied using a novel test structure. We have found that a significant amount of the sputtered material (up to 50% of the sputter flux) returns, as an isotropic backscattered flux to the wafer. This backscattered flux results in significant deposition that cannot be accounted for by redeposition, i.e., line-of-sight deposition of the sputtered material, alone. A profile simulator is used to demonstrate a new physical model for the Ar sputter-etch process, based on the interaction of three simultaneous processes: (1) sputtering, (2) direct (i.e., line-of-sight) redeposition of sputtered material, and (3) isotropic deposition of sputtered material backscattered from the gas phase. Simulated profiles show good agreement with experimental results on the test structure and a common device structure.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.110508

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A dynamic local bump system for producing synchrotron radiation with an alternating elliptical polarization (1998)

Lin, K. K. ; Hsu, K. T. ; Chen, J. S. ; [et al.]

Chester : International Union of Crystallography (IUCr)

Journal of synchrotron radiation 5 (1998), S. 398-400

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ISSN: 1600-5775

Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001

Topics: Geosciences , Physics

Notes: To facilitate high-sensitivity soft X-ray magnetic circular dichroism experiments, a dynamic local bump system has been developed at the SRRC storage ring. This system was devised to vary dynamically the vertical slope of the electron beam in a bending magnet, producing, in the electron orbit plane, soft X-rays with an alternating elliptical polarization. The local bump was created by using two pairs of vertical correctors located on each side of the bending magnet. The bump strength coefficient was obtained both from calculated estimation and from measured beam-response matrices. Control electronics for proper bump strength settings were designed to incorporate the existing orbit-corrector function. A corresponding graphic user interface was implemented so that the bump amplitude could be easily adjusted. The performance of this system is presented. Disturbance on the stored electron beam orbit was observed while flipping the corrector polarity during EPBM (elliptical polarization from bending magnets) operation. A local feedback loop, developed to eliminate such disturbance on other beamlines, is also described.