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  • 1
    Electronic Resource
    Electronic Resource
    X-ray interference measurement of ultrathin semiconductor layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1774-1776 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized, using the interference structure in x-ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 A(ring) and 107±3 A(ring) for the single strained layer samples and 7 A(ring)/50 A(ring) and 32 A(ring)/32 A(ring) for the double strained layer samples. The rocking curve results for the 107 A(ring) single-barrier sample and the 7 A(ring)/50 A(ring) double-barrier sample agreed well with the cross-section transmission electron microscopy data and the secondary-ion mass spectrometry data. The x-ray interference structure for the single strained barrier samples indicates the existence of many half-monolayer steps within the 1×1 mm2 x-ray beam spot at each GaInP/InP interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102189
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  • 2
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 987-989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass transport limited in the temperature range of 420–580 °C. It is kinetic controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101697
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  • 3
    Electronic Resource
    Electronic Resource
    Surface Waves and Coastal Dynamics (1993)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Fluid Mechanics 25 (1993), S. 215-240 
    Details
    ISSN: 0066-4189
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.fl.25.010193.001243
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  • 4
    Electronic Resource
    Electronic Resource
    Intensity-dependent photoluminescence spectra of semiconductor-doped glasses (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 643-645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of CdSx Se1−x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling-mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (〉30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100396
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  • 5
    Electronic Resource
    Electronic Resource
    Origin of modulation-induced mode partition and Gb/s system performance of highly single-mode 1.5 μm distributed feedback lasers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1762-1764 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation-induced mode partition in distributed feedback lasers was investigated by photon statistics and bit-error-rate measurements. Its origin is explained for the first time in terms of the transient index changes and the resulting corrugation dephasing. We also propose device screening and desirable parameters for error-free operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99635
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  • 6
    Electronic Resource
    Electronic Resource
    Generation and evolution of edge-wave packets (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 10 (1998), S. 1635-1657 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper the generation and evolution of an edge-wave packet are studied experimentally and numerically. In the laboratory an edge-wave packet is first generated on a sloping beach by a hinge-type wave-maker. Both the free surface displacement and velocity field are measured along several on-offshore cross sections. Numerical results are also obtained by solving the linear shallow-water wave equations and are compared with experimental data. Numerically predicted wave evolution characteristics are in good agreement with those shown by laboratory data. Analyses of the wave amplitude density spectra of both numerical solutions and experimental data show that wave packets are indeed trapped in the nearshore region and consist of a mixture of Stokes and higher-mode edge waves. Furthermore, the Stokes mode dominates in the low frequency range. Two additional wave-maker designs, i.e., the piston-type and the reverse hinge-type, are investigated numerically. Away from the wave-maker the wave forms (time histories) of the wave packets are insensitive to the details of wave-maker movements. The effects of beach slope on the evolution of wave packets are investigated. The behavior of the velocity field and the attenuation rates of runup amplitudes are also discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869682
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  • 7
    Electronic Resource
    Electronic Resource
    Shallow levels, deep levels and electrical characteristics in Zn-doped GaInP/InP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3711-3716 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn-doped GaxIn1−xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-GaxIn1−xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at EV+0.84 eV was detected by deep-level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345011
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  • 8
    Electronic Resource
    Electronic Resource
    High-lying thermally excited subbands of two-dimensional electron gases in GaAs/AlGaAs heterojunction for modulation-doped field-effect transistor (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3900-3905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cyclotron resonance of two-dimensional electron gases was directly measured on a modulation-doped field-effect transistor structure by the gate voltage ratio spectroscopy. The intersubband energies between the lowest subband and the subbands with quantum index up to i=5 were determined by resonant subband-Landau-level coupling (RSLC) under relatively low magnetic field. The experimental results were in good agreement with the self-consistent calculations including the depolarization shift and exciton-like effect corrections. The quantum index dependence of the level splitting due to the RSLC was discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365694
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  • 9
    Electronic Resource
    Electronic Resource
    Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4491-4494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual donors in the high purity InP epitaxial layer grown by gas source molecular beam epitaxy (GSMBE) have been identified by a photothermal ionization technique in a magnetic field. The dominant residual donors in GSMBE InP are identified to be silicon and sulfur. The Zeeman effect of the hydrogenic donors has also been investigated. The 1s–3p photothermal ionization transitions of the hydrogenic donors are observed even at zero magnetic field. The photoconductivity transition related to the LO phonon is observed and discussed. Furthermore, the photothermal ionization transitions arising from different chemical donors are also clearly resolved in a magnetic field. From the spectral peaks in magnetic field, the electron effective mass m* in GSMBE InP is estimated to be (0.0817±0.0002)m0. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363410
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  • 10
    Electronic Resource
    Electronic Resource
    High-lying metastable states of Si donors in GaAs under magnetic field (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6183-6185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fourier transform infrared photoconductivity spectra of Si donors in GaAs under magnetic field are presented in this paper. Four new spectral lines corresponding to the transitions from hydrogen-like ground state to the metastable states (510), (610), (710), and (810) under nonzero magnetic field were observed. The variational calculation model proposed by Barmby et al. was applied to the high-lying metastable states. The experimental data of the transition energies agree well with the variational results under high magnetic field and below the resonant polaron region. Deviations due to omitting the bound Landau continuum coupling in the trial wave function were found in the comparison at the low field region for the metastable states with higher Landau index. The ionization energies of the high-lying metastable states were also determined. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364402
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