Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 4946-4950
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effects of charge accumulation during bias sputtering of copper onto an insulating material are studied. To eliminate the effects of charge accumulation, we periodically apply a pulse bias to the electrode. Microstructure and electrical properties of the sputtered copper films grown on silicon dioxide are measured as a function of the pulse bias frequency. By comparing the observed properties of these films grown under a pulse bias to those grown under a dc bias (with a conducting path to the electrode), the effectiveness of the pulse bias in controlling the ion energy distribution is demonstrated. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1406540
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |