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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 38 (1982), S. 800-802 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: An alternative approach is introduced to determine the grain size distribution directly from the shape of the line profile in X-ray diffraction from a crystalline powder.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Applications of Surface Science 11-12 (1982), S. 634-636 
    ISSN: 0378-5963
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Chemical Physics Letters 127 (1986), S. 512-514 
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5898-5903 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations of the transient charging currents to an insulating surface exposed to a dc discharge after the application of a pulse bias to the insulating surface are made based on a quasistatic treatment of the sheath's impedance as a nonlinear dc resistance. Measurements of these transient charging currents are shown to correlate with the calculated transient currents for the experimental conditions used in this study. Discussion is then provided to indicate the limits on the pulse, plasma, and coupling conditions in which this quasistatic, dc treatment of the sheath's response to the applied pulse remains valid. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4946-4950 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of charge accumulation during bias sputtering of copper onto an insulating material are studied. To eliminate the effects of charge accumulation, we periodically apply a pulse bias to the electrode. Microstructure and electrical properties of the sputtered copper films grown on silicon dioxide are measured as a function of the pulse bias frequency. By comparing the observed properties of these films grown under a pulse bias to those grown under a dc bias (with a conducting path to the electrode), the effectiveness of the pulse bias in controlling the ion energy distribution is demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2443-2445 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that the electromigration resistance of pure Al/SiO2 thin films prepared by the partially ionized beam (PIB) deposition technique can be improved significantly as compared to those deposited by the conventional means. The PIB contained 0.8–1.2% of Al self-ions and a bias potential of 2–5 kV was applied to the substrate during deposition. The enhancement of the electromigration resistance of the Al films is believed to be associated with the strong preferred orientation (in the [111] direction) that these films have. Surprisingly the preferred orientation effect is not accompanied by an enlargement of the Al grain size. This combination of preferred orientation and small grain size may find important applications in future very large scale integrated metallization.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2210-2212 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preferred crystallographic orientation, or texture, of aluminum films deposited on oxidized silicon by evaporation and by partially ionized beam (PIB) deposition is studied. Texture is quantified by the x-ray diffraction pole figure technique. The pole figures reveal important details of the crystallite distribution not quantifiable by simply taking the 2θ scan. It is found that the films deposited by the PIB technique possess a very strong {111} fiber texture whose strength can be controlled by deposition conditions. Correlation between the strength of the texture and the electromigration lifetime is discussed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 466-470 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room temperature growth of 1000–1500 A(ring) Ag films on HF-dipped Si substrates is studied as a function of self-ion (Ag+) energy during deposition. In all cases the films contained a mixture of epitaxial grains and randomly oriented (111) grains. The orientations observed were Ag(111)/Si(111) with both type A (Ag〈110〉//Si〈110〉) and type B (Ag〈110〉//Si〈114〉) twins; Ag(110)/Si(110) with Ag〈001〉//Si〈001〉; and Ag(100)/Si(100) with Ag〈011〉//Si〈011〉. All three constructions match three Si atomic rows with four Ag rows. As judged by the ratio of epitaxial to nonepitaxial grains, the strength of the epitaxy was seen to decrease in the order (111)(approximately-greater-than)(110)(approximately-greater-than)(100). Increasing the Ag+ ion energy during the deposition was generally seen to decrease this ratio. Annealing of the Ag/Si(100) films induced preferential (100) grain growth.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 533-535 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel nonlinear composite thin films containing 4-dialkylamino-4'-nitro-stilbene (DANS) and Teflon AF 1600 have been deposited by vacuum evaporation techniques. Pure DANS thin film, due to its centrosymmetric crystal structure, does not exhibit any electro-optic effect. However, composite thin films of DANS and Teflon AF 1600 with a DANS concentration of 5%–25% (by volume) do exhibit an electro-optic effect after poling. Their electro-optical coefficients are measured to be as large as 2.4 pm/V. X-ray diffraction shows that these composite thin films are in an amorphous state as-deposited as well as after poling. It is argued that the DANS molecules are in their molecular form embedded in the Teflon AF amorphous matrix, thereby allowing the effect of their large molecular hyperpolarizability to be detected. The characterization of the thin films using scanning electron microscopy is also presented.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2735-2738 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A partially ionized beam deposition technique which utilizes a small fraction of self-ions during deposition is used to grow thin Ag films (∼1200 A(ring)) on glass substrates. It is shown that due to substrate charging the Ag film is discontinuous and has inferior structural and electrical properties. This difficulty was overcome by using an oscillatory substrate bias so that electron showers are directed toward the surface to neutralize the substrate during deposition. We show that this scheme of deposition can produce thin and continuous Ag films on glass with bulk-like resistivity with a substrate bias of (approximately-greater-than)1.3 kV. This deposition technique opens up the possibility of coating high-quality metal films on insulators for optical and electronic applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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