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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 533-535 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel nonlinear composite thin films containing 4-dialkylamino-4'-nitro-stilbene (DANS) and Teflon AF 1600 have been deposited by vacuum evaporation techniques. Pure DANS thin film, due to its centrosymmetric crystal structure, does not exhibit any electro-optic effect. However, composite thin films of DANS and Teflon AF 1600 with a DANS concentration of 5%–25% (by volume) do exhibit an electro-optic effect after poling. Their electro-optical coefficients are measured to be as large as 2.4 pm/V. X-ray diffraction shows that these composite thin films are in an amorphous state as-deposited as well as after poling. It is argued that the DANS molecules are in their molecular form embedded in the Teflon AF amorphous matrix, thereby allowing the effect of their large molecular hyperpolarizability to be detected. The characterization of the thin films using scanning electron microscopy is also presented.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 622-624 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present recent experimental results of difference-frequency generation (DFG) and sum-frequency generation (SFG) from zincblende materials. We measure the radiation field of difference-frequency generation and the radiation intensity of sum-frequency generation versus crystallographic orientation and fundamental photon energy. The simultaneous measurement of the angular dependence of polarized DFG and SFG is well characterized by the bulk second-order nonlinearity calculation. Pronounced resonant behaviors near the GaAs band gap for both radiations (DFG and SFG) are compared.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2258-2263 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinear optical films were vapor deposited onto Si(100) and indium-tin-oxide-coated glass. These films are guest-host-type polymer and showed electrooptical (EO) properties after poling. The host polymer is Teflon AF 1600 (AF) and the guest is dimethylaminonitrostilbene (DANS). Deposition is done by coevaporation. EO effects were found in films containing 5–25 vol % DANS. The EO coefficient r33, is found to be a function of composition, poling temperature, and cooling rate during poling. The highest EO coefficient obtained is 2.4 pm/V from a film with 10 vol % DANS and poled at a temperature of 130 °C. Very little or no EO effects were found for films with (approximately-greater-than)25 vol % DANS. This is found to be a result of phase separation and subsequent crystallization of DANS. A decrease of EO effect at higher poling temperature is possibly a result of thermal disorder which was "frozen'' during cooling. DANS was also found to react with Teflon AF 1600 at a higher DANS concentration. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 508-510 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding structure of an amorphous fluoropolymer, AF 1600, with Al, Ag, Au, and Cu were examined using x-ray photoelectron spectroscopy. 100 A(ring) thick films of AF 1600 were deposited on various metal films. AlF3 was found at the AF 1600/Al interface. F detached from the −CF3 functional group of the AF 1600, diffused into the Al/Al2O3 matrix and formed AlF3. The diffusion depth of F is estimated to be (approximately-greater-than)150 A(ring). An Al film was evaporated onto an AF 1600 film. The Al film was then mechanically peeled off and the remaining polymer surface examined. AlF3 was again found. For the spin-on AF 1600 film on Ag, Au, and Cu, no chemical reaction between the metal and the polymer were found.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 682-684 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the measurement of optically generated THz radiation from over ten different metal/GaAs interfaces. We observe an anomalous behavior in the THz beams emitted from these interfaces. In contrast to THz radiation generated at normal incidence where the amplitude of the THz signal decreases with increasing metal film thickness, at oblique incidence we observe increased THz emission with increasing metal thickness until reaching a maximum near 80 A(ring).
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1324-1326 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the study of optically induced terahertz (THz) electromagnetic radiation from 〈110〉 oriented zinc-blende crystals. This work extends our previous studies of 〈100〉 and 〈111〉 GaAs. Excellent agreement between calculated results and experimental data indicates that, under conditions of moderate optical fluence and normal incidence on the unbiased sample, second-order optical rectification is the major nonlinear process that generates THz radiation.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3080-3082 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report optical rectification and subsequent generation of subpicosecond submillimeter-wave radiation from a nonlinear organic crystalline salt. With optical excitation at a wavelength of 820 nm and a 150 fs pulse duration, the magnitude of the rectified field from the organic salt dimethyl amino 4-N-methylstilbazolium tosylate is one and two orders of magnitude larger than that from GaAs and LiTaO3 crystals, respectively. This organic crystal presently provides the most intense terahertz radiated field among all of the natural nonexternally biased materials we know.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2764-2766 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of coherent measurement (phase and amplitude) of optical rectification from a variety of electro-optic crystals. We also present a comparison of the experimental data with a theoretical calculation.
    Type of Medium: Electronic Resource
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